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NTE2311 - 

TRANSISTOR NPN SILICON 1000V IC=15A TO-218 CASE TF=0.13US HIGH VOLTAGE HIGH SPEE

NTE Electronics, Inc. NTE2311
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE2311
仓库库存编号：
70215931
技术数据表：
View NTE2311 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE2311产品概述

Silicon NPN Transistor, TO218 Package Type, NPN, -65 to +175°C

NTE2311产品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  15 A  
  Current, Gain  10  
  Device Dissipation  150 W  
  Dimensions  15.24 x 4.4 x 13.97 mm  
  Gain, DC Current, Minimum  10  
  Height  0.55" (13.97mm)  
  Length  0.6" (15.24mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-218  
  Polarity  NPN  
  Power Dissipation  150 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  1 °C/W  
  Temperature, Junction, Operating  -65 to 175 °C  
  Temperature, Operating, Maximum  +175 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +175 °C  
  Transistor Polarity  NPN  
  Transistor Type  NPN  
  Type  High Voltage, Switch  
  Voltage, Breakdown, Collector to Emitter  450 V  
  Voltage, Collector to Emitter  450 V  
  Voltage, Collector to Emitter, Saturation  5 V  
  Voltage, Emitter to Base  7 V  
  Voltage, Saturation, Base to Emitter  1.6 V  
  Width  0.173" (4.4mm)  
关键词         

NTE2311相关搜索

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Inc. Dimensions 15.24 x 4.4 x 13.97 mm  Bipolar Transistors Dimensions 15.24 x 4.4 x 13.97 mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 15.24 x 4.4 x 13.97 mm   Gain, DC Current, Minimum 10  NTE Electronics, Inc. Gain, DC Current, Minimum 10  Bipolar Transistors Gain, DC Current, Minimum 10  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 10   Height 0.55" (13.97mm)  NTE Electronics, Inc. Height 0.55" (13.97mm)  Bipolar Transistors Height 0.55" (13.97mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.55" (13.97mm)   Length 0.6" (15.24mm)  NTE Electronics, Inc. Length 0.6" (15.24mm)  Bipolar Transistors Length 0.6" (15.24mm)  NTE Electronics, Inc. Bipolar Transistors Length 0.6" (15.24mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-218  NTE Electronics, Inc. Package Type TO-218  Bipolar Transistors Package Type TO-218  NTE Electronics, Inc. Bipolar Transistors Package Type TO-218   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 150 W  NTE Electronics, Inc. Power Dissipation 150 W  Bipolar Transistors Power Dissipation 150 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 150 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 1 °C/W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 1 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 1 °C/W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 1 °C/W   Temperature, Junction, Operating -65 to 175 °C  NTE Electronics, Inc. Temperature, Junction, Operating -65 to 175 °C  Bipolar Transistors Temperature, Junction, Operating -65 to 175 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Junction, Operating -65 to 175 °C   Temperature, Operating, Maximum +175 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +175 °C  Bipolar Transistors Temperature, Operating, Maximum +175 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +175 °C  NTE Electronics, Inc. Temperature, Operating, Range -65 to +175 °C  Bipolar Transistors Temperature, Operating, Range -65 to +175 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -65 to +175 °C   Transistor Polarity NPN  NTE Electronics, Inc. Transistor Polarity NPN  Bipolar Transistors Transistor Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity NPN   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type High Voltage, Switch  NTE Electronics, Inc. Type High Voltage, Switch  Bipolar Transistors Type High Voltage, Switch  NTE Electronics, Inc. Bipolar Transistors Type High Voltage, Switch   Voltage, Breakdown, Collector to Emitter 450 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 450 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 450 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 450 V   Voltage, Collector to Emitter 450 V  NTE Electronics, Inc. Voltage, Collector to Emitter 450 V  Bipolar Transistors Voltage, Collector to Emitter 450 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 450 V   Voltage, Collector to Emitter, Saturation 5 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 5 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 5 V   Voltage, Emitter to Base 7 V  NTE Electronics, Inc. Voltage, Emitter to Base 7 V  Bipolar Transistors Voltage, Emitter to Base 7 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 7 V   Voltage, Saturation, Base to Emitter 1.6 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 1.6 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 1.6 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 1.6 V   Width 0.173" (4.4mm)  NTE Electronics, Inc. Width 0.173" (4.4mm)  Bipolar Transistors Width 0.173" (4.4mm)  NTE Electronics, Inc. Bipolar Transistors Width 0.173" (4.4mm)  
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