amphenol代理商
专业销售Amphenol（安费诺）全系列产品-英国2号仓库
库存查询
美国1号分类选型新加坡2号分类选型英国10号分类选型英国2号分类选型日本5号分类选型

在本站结果里搜索：    
热门搜索词:  Connectors  8910DPA43V02  Amphenol  UVZSeries 160VDC  70084122  IM21-14-CDTRI

NTE2322 - 

QUAD TRANSISTOR PNP SILICON 60V IC=0.6A14-LEAD DIP

NTE Electronics, Inc. NTE2322
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE2322
仓库库存编号：
70215902
技术数据表：
View NTE2322 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE2322产品概述

General Purpose Transistor, SOT-23 Package Type, 200 mAdc (Max.) Current Collector

NTE2322产品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  600 mA  
  Current, Gain  30  
  Device Dissipation  1.9 W  
  Dimensions  19.95 x 7.62 x 5.08 mm  
  Frequency, Operating  200 MHz  
  Gain, DC Current, Minimum  30  
  Height  0.2" (5.08mm)  
  Length  0.785" (19.95mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  14  
  Package Type  DIP-14  
  Polarity  PNP  
  Power Dissipation  1.9 W  
  Primary Type  Si  
  Temperature Range, Junction, Operating  -55 to 125 °C  
  Temperature, Operating, Maximum  +125 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +125 °C  
  Thermal Resistance, Junction to Ambient  66 °C⁄W  
  Transistor Polarity  PNP  
  Transistor Type  PNP  
  Type  General Purpose, Quad  
  Voltage, Breakdown, Collector to Emitter  40 V  
  Voltage, Collector to Base  60 V  
  Voltage, Collector to Emitter  40 V  
  Voltage, Collector to Emitter, Saturation  1.6 V  
  Voltage, Emitter to Base  5 V  
  Voltage, Saturation, Base to Emitter  2.6 V  
  Voltage, Saturation, Collector to Emitter  1.6 V  
  Width  0.3" (7.62mm)  
关键词         

NTE2322相关搜索

Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 600 mA  NTE Electronics, Inc. Current, Collector 600 mA  Bipolar Transistors Current, Collector 600 mA  NTE Electronics, Inc. Bipolar Transistors Current, Collector 600 mA   Current, Gain 30  NTE Electronics, Inc. Current, Gain 30  Bipolar Transistors Current, Gain 30  NTE Electronics, Inc. Bipolar Transistors Current, Gain 30   Device Dissipation 1.9 W  NTE Electronics, Inc. Device Dissipation 1.9 W  Bipolar Transistors Device Dissipation 1.9 W  NTE Electronics, Inc. Bipolar Transistors Device Dissipation 1.9 W   Dimensions 19.95 x 7.62 x 5.08 mm  NTE Electronics, Inc. Dimensions 19.95 x 7.62 x 5.08 mm  Bipolar Transistors Dimensions 19.95 x 7.62 x 5.08 mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 19.95 x 7.62 x 5.08 mm   Frequency, Operating 200 MHz  NTE Electronics, Inc. Frequency, Operating 200 MHz  Bipolar Transistors Frequency, Operating 200 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 200 MHz   Gain, DC Current, Minimum 30  NTE Electronics, Inc. Gain, DC Current, Minimum 30  Bipolar Transistors Gain, DC Current, Minimum 30  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 30   Height 0.2" (5.08mm)  NTE Electronics, Inc. Height 0.2" (5.08mm)  Bipolar Transistors Height 0.2" (5.08mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.2" (5.08mm)   Length 0.785" (19.95mm)  NTE Electronics, Inc. Length 0.785" (19.95mm)  Bipolar Transistors Length 0.785" (19.95mm)  NTE Electronics, Inc. Bipolar Transistors Length 0.785" (19.95mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 14  NTE Electronics, Inc. Number of Pins 14  Bipolar Transistors Number of Pins 14  NTE Electronics, Inc. Bipolar Transistors Number of Pins 14   Package Type DIP-14  NTE Electronics, Inc. Package Type DIP-14  Bipolar Transistors Package Type DIP-14  NTE Electronics, Inc. Bipolar Transistors Package Type DIP-14   Polarity PNP  NTE Electronics, Inc. Polarity PNP  Bipolar Transistors Polarity PNP  NTE Electronics, Inc. Bipolar Transistors Polarity PNP   Power Dissipation 1.9 W  NTE Electronics, Inc. Power Dissipation 1.9 W  Bipolar Transistors Power Dissipation 1.9 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 1.9 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Temperature Range, Junction, Operating -55 to 125 °C  NTE Electronics, Inc. Temperature Range, Junction, Operating -55 to 125 °C  Bipolar Transistors Temperature Range, Junction, Operating -55 to 125 °C  NTE Electronics, Inc. Bipolar Transistors Temperature Range, Junction, Operating -55 to 125 °C   Temperature, Operating, Maximum +125 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +125 °C  Bipolar Transistors Temperature, Operating, Maximum +125 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +125 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  Bipolar Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +125 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +125 °C  Bipolar Transistors Temperature, Operating, Range -55 to +125 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -55 to +125 °C   Thermal Resistance, Junction to Ambient 66 °C⁄W  NTE Electronics, Inc. Thermal Resistance, Junction to Ambient 66 °C⁄W  Bipolar Transistors Thermal Resistance, Junction to Ambient 66 °C⁄W  NTE Electronics, Inc. Bipolar Transistors Thermal Resistance, Junction to Ambient 66 °C⁄W   Transistor Polarity PNP  NTE Electronics, Inc. Transistor Polarity PNP  Bipolar Transistors Transistor Polarity PNP  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity PNP   Transistor Type PNP  NTE Electronics, Inc. Transistor Type PNP  Bipolar Transistors Transistor Type PNP  NTE Electronics, Inc. Bipolar Transistors Transistor Type PNP   Type General Purpose, Quad  NTE Electronics, Inc. Type General Purpose, Quad  Bipolar Transistors Type General Purpose, Quad  NTE Electronics, Inc. Bipolar Transistors Type General Purpose, Quad   Voltage, Breakdown, Collector to Emitter 40 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 40 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 40 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 40 V   Voltage, Collector to Base 60 V  NTE Electronics, Inc. Voltage, Collector to Base 60 V  Bipolar Transistors Voltage, Collector to Base 60 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 60 V   Voltage, Collector to Emitter 40 V  NTE Electronics, Inc. Voltage, Collector to Emitter 40 V  Bipolar Transistors Voltage, Collector to Emitter 40 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 40 V   Voltage, Collector to Emitter, Saturation 1.6 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 1.6 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 1.6 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 1.6 V   Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 5 V   Voltage, Saturation, Base to Emitter 2.6 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 2.6 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 2.6 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 2.6 V   Voltage, Saturation, Collector to Emitter 1.6 V  NTE Electronics, Inc. Voltage, Saturation, Collector to Emitter 1.6 V  Bipolar Transistors Voltage, Saturation, Collector to Emitter 1.6 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Collector to Emitter 1.6 V   Width 0.3" (7.62mm)  NTE Electronics, Inc. Width 0.3" (7.62mm)  Bipolar Transistors Width 0.3" (7.62mm)  NTE Electronics, Inc. Bipolar Transistors Width 0.3" (7.62mm)  
电话:400-900-3095
QQ:800152669
关于我们 | Amphenol简介 | Amphenol产品 | Amphenol产品应用 | Amphenol动态 | 按系列选型 | 按产品规格选型 | Amphenol选型手册 | 付款方式 | 联系我们
Copyright © 2017 www.amphenol-connect.com All Rights Reserved. 技术支持：电子元器件 ICP备案证书号:粤ICP备11103613号