amphenol代理商
专业销售Amphenol（安费诺）全系列产品-英国2号仓库
库存查询
美国1号分类选型新加坡2号分类选型英国10号分类选型英国2号分类选型日本5号分类选型

在本站结果里搜索：    
热门搜索词:  Connectors  8910DPA43V02  Amphenol  UVZSeries 160VDC  70084122  IM21-14-CDTRI

NTE2349 - 

TRANSISTOR NPN SILICON DARLINGTON 120V IC=50A TO-3 CASE COMPLEMENT TO NTE2350

NTE Electronics, Inc. NTE2349
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE2349
仓库库存编号：
70215991
技术数据表：
View NTE2349 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE2349产品概述

Silicon Darlington Transistors

NTE2349产品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  50 A  
  Current, Continuous Collector  50 A  
  Current, Gain  400  
  Current, Output  50 A  
  Current, Output, Leakage  2 mA  
  Device Dissipation  300 W  
  Diameter  22.2 mm  
  Dimensions  22.2 Dia. x 8.89 H mm  
  Gain, DC Current, Maximum  18000  
  Gain, DC Current, Minimum  1000  
  Height  0.35" (8.89mm)  
  Input Voltage  5 V  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-3  
  Polarity  NPN  
  Power Dissipation  300 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  0.584 °C⁄W  
  Temperature Range, Junction, Operating  -55 to 200 °C  
  Temperature, Operating, Maximum  +200 °C  
  Temperature, Operating, Range  Maximum of +200 °C  
  Transistor Polarity  NPN  
  Transistor Type  NPN  
  Type  Amplifier, High Current  
  Voltage, Breakdown, Collector to Emitter  120 V  
  Voltage, Collector to Base  120 V  
  Voltage, Collector to Emitter  120 V  
  Voltage, Collector to Emitter, Saturation  3.5 V  
  Voltage, Emitter to Base  5 V  
  Voltage, Output  120 V  
  Voltage, Saturation, Base to Emitter  4.5 V  
关键词         

NTE2349客户还搜索了

  • 参考图片
  • 制造商 / 说明 / 型号 / 仓库库存编号
  • PDF
  • 操作

NTE2349相关搜索

Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 50 A  NTE Electronics, Inc. Current, Collector 50 A  Bipolar Transistors Current, Collector 50 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 50 A   Current, Continuous Collector 50 A  NTE Electronics, Inc. Current, Continuous Collector 50 A  Bipolar Transistors Current, Continuous Collector 50 A  NTE Electronics, Inc. Bipolar Transistors Current, Continuous Collector 50 A   Current, Gain 400  NTE Electronics, Inc. Current, Gain 400  Bipolar Transistors Current, Gain 400  NTE Electronics, Inc. Bipolar Transistors Current, Gain 400   Current, Output 50 A  NTE Electronics, Inc. Current, Output 50 A  Bipolar Transistors Current, Output 50 A  NTE Electronics, Inc. Bipolar Transistors Current, Output 50 A   Current, Output, Leakage 2 mA  NTE Electronics, Inc. Current, Output, Leakage 2 mA  Bipolar Transistors Current, Output, Leakage 2 mA  NTE Electronics, Inc. Bipolar Transistors Current, Output, Leakage 2 mA   Device Dissipation 300 W  NTE Electronics, Inc. Device Dissipation 300 W  Bipolar Transistors Device Dissipation 300 W  NTE Electronics, Inc. Bipolar Transistors Device Dissipation 300 W   Diameter 22.2 mm  NTE Electronics, Inc. Diameter 22.2 mm  Bipolar Transistors Diameter 22.2 mm  NTE Electronics, Inc. Bipolar Transistors Diameter 22.2 mm   Dimensions 22.2 Dia. x 8.89 H mm  NTE Electronics, Inc. Dimensions 22.2 Dia. x 8.89 H mm  Bipolar Transistors Dimensions 22.2 Dia. x 8.89 H mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 22.2 Dia. x 8.89 H mm   Gain, DC Current, Maximum 18000  NTE Electronics, Inc. Gain, DC Current, Maximum 18000  Bipolar Transistors Gain, DC Current, Maximum 18000  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Maximum 18000   Gain, DC Current, Minimum 1000  NTE Electronics, Inc. Gain, DC Current, Minimum 1000  Bipolar Transistors Gain, DC Current, Minimum 1000  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 1000   Height 0.35" (8.89mm)  NTE Electronics, Inc. Height 0.35" (8.89mm)  Bipolar Transistors Height 0.35" (8.89mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.35" (8.89mm)   Input Voltage 5 V  NTE Electronics, Inc. Input Voltage 5 V  Bipolar Transistors Input Voltage 5 V  NTE Electronics, Inc. Bipolar Transistors Input Voltage 5 V   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-3  NTE Electronics, Inc. Package Type TO-3  Bipolar Transistors Package Type TO-3  NTE Electronics, Inc. Bipolar Transistors Package Type TO-3   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 300 W  NTE Electronics, Inc. Power Dissipation 300 W  Bipolar Transistors Power Dissipation 300 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 300 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 0.584 °C⁄W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 0.584 °C⁄W  Bipolar Transistors Resistance, Thermal, Junction to Case 0.584 °C⁄W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 0.584 °C⁄W   Temperature Range, Junction, Operating -55 to 200 °C  NTE Electronics, Inc. Temperature Range, Junction, Operating -55 to 200 °C  Bipolar Transistors Temperature Range, Junction, Operating -55 to 200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature Range, Junction, Operating -55 to 200 °C   Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Range Maximum of +200 °C  NTE Electronics, Inc. Temperature, Operating, Range Maximum of +200 °C  Bipolar Transistors Temperature, Operating, Range Maximum of +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range Maximum of +200 °C   Transistor Polarity NPN  NTE Electronics, Inc. Transistor Polarity NPN  Bipolar Transistors Transistor Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity NPN   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type Amplifier, High Current  NTE Electronics, Inc. Type Amplifier, High Current  Bipolar Transistors Type Amplifier, High Current  NTE Electronics, Inc. Bipolar Transistors Type Amplifier, High Current   Voltage, Breakdown, Collector to Emitter 120 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 120 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 120 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 120 V   Voltage, Collector to Base 120 V  NTE Electronics, Inc. Voltage, Collector to Base 120 V  Bipolar Transistors Voltage, Collector to Base 120 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 120 V   Voltage, Collector to Emitter 120 V  NTE Electronics, Inc. Voltage, Collector to Emitter 120 V  Bipolar Transistors Voltage, Collector to Emitter 120 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 120 V   Voltage, Collector to Emitter, Saturation 3.5 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 3.5 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 3.5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 3.5 V   Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 5 V   Voltage, Output 120 V  NTE Electronics, Inc. Voltage, Output 120 V  Bipolar Transistors Voltage, Output 120 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Output 120 V   Voltage, Saturation, Base to Emitter 4.5 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 4.5 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 4.5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 4.5 V  
电话:400-900-3095
QQ:800152669
关于我们 | Amphenol简介 | Amphenol产品 | Amphenol产品应用 | Amphenol动态 | 按系列选型 | 按产品规格选型 | Amphenol选型手册 | 付款方式 | 联系我们
Copyright © 2017 www.amphenol-connect.com All Rights Reserved. 技术支持：电子元器件 ICP备案证书号:粤ICP备11103613号