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Silicon NPN Transistor, High Voltage Horizontal Deflection Output, 800 V Collector to Emitter Voltage

Brand/Series	Transistor Series
Configuration	Common Base
Current, Collector	15 A
Current, Gain	4
Device Dissipation	180 W (Collector)
Dimensions	20.57 x 5.2 x 26.16 mm
Gain, DC Current, Maximum	8 @ VCE == 5V, IC == 10 A
Gain, DC Current, Minimum	4 @ VCE == 5V, IC == 10A
Height	1.03" (26.16mm)
Length	0.809" (20.57mm)
Material	Si
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	3
Package Type	TO-220
Polarity	NPN
Power Dissipation	180 W
Primary Type	Si
Temperature, Junction, Operating	0 to 150 °C
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Transistor Polarity	NPN
Transistor Type	NPN
Type	High Voltage
Voltage, Breakdown, Collector to Emitter	800 V
Voltage, Collector to Base	1500 V
Voltage, Collector to Emitter	800 V
Voltage, Collector to Emitter, Saturation	5 V
Voltage, Emitter to Base	6 V
Voltage, Saturation, Base to Emitter	1.5 V
Width	0.205" (5.2mm)
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• Vishay PCS
  MOSFET, Power; N-Ch; VDSS 1000V; RDS(ON) 2Ohms; ID 6.1A; TO-247AC; PD 190W; VGS +/-20V
  
  型号：IRFPG50PBF
  仓库库存编号：70078954
  
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Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 15 A  NTE Electronics, Inc. Current, Collector 15 A  Bipolar Transistors Current, Collector 15 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 15 A   Current, Gain 4  NTE Electronics, Inc. Current, Gain 4  Bipolar Transistors Current, Gain 4  NTE Electronics, Inc. Bipolar Transistors Current, Gain 4   Device Dissipation 180 W (Collector)  NTE Electronics, Inc. Device Dissipation 180 W (Collector)  Bipolar Transistors Device Dissipation 180 W (Collector)  NTE Electronics, Inc. Bipolar Transistors Device Dissipation 180 W (Collector)   Dimensions 20.57 x 5.2 x 26.16 mm  NTE Electronics, Inc. Dimensions 20.57 x 5.2 x 26.16 mm  Bipolar Transistors Dimensions 20.57 x 5.2 x 26.16 mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 20.57 x 5.2 x 26.16 mm   Gain, DC Current, Maximum 8 @ VCE == 5V, IC == 10 A  NTE Electronics, Inc. Gain, DC Current, Maximum 8 @ VCE == 5V, IC == 10 A  Bipolar Transistors Gain, DC Current, Maximum 8 @ VCE == 5V, IC == 10 A  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Maximum 8 @ VCE == 5V, IC == 10 A   Gain, DC Current, Minimum 4 @ VCE == 5V, IC == 10A  NTE Electronics, Inc. Gain, DC Current, Minimum 4 @ VCE == 5V, IC == 10A  Bipolar Transistors Gain, DC Current, Minimum 4 @ VCE == 5V, IC == 10A  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 4 @ VCE == 5V, IC == 10A   Height 1.03" (26.16mm)  NTE Electronics, Inc. Height 1.03" (26.16mm)  Bipolar Transistors Height 1.03" (26.16mm)  NTE Electronics, Inc. Bipolar Transistors Height 1.03" (26.16mm)   Length 0.809" 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Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  Bipolar Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +150 °C  Bipolar Transistors Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -55 to +150 °C   Transistor Polarity NPN  NTE Electronics, Inc. Transistor Polarity NPN  Bipolar Transistors Transistor Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity NPN   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type High Voltage  NTE Electronics, Inc. Type High Voltage  Bipolar Transistors Type High Voltage  NTE Electronics, Inc. Bipolar Transistors Type High Voltage   Voltage, Breakdown, Collector to Emitter 800 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 800 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 800 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 800 V   Voltage, Collector to Base 1500 V  NTE Electronics, Inc. Voltage, Collector to Base 1500 V  Bipolar Transistors Voltage, Collector to Base 1500 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 1500 V   Voltage, Collector to Emitter 800 V  NTE Electronics, Inc. Voltage, Collector to Emitter 800 V  Bipolar Transistors Voltage, Collector to Emitter 800 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 800 V   Voltage, Collector to Emitter, Saturation 5 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 5 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 5 V   Voltage, Emitter to Base 6 V  NTE Electronics, Inc. Voltage, Emitter to Base 6 V  Bipolar Transistors Voltage, Emitter to Base 6 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 6 V   Voltage, Saturation, Base to Emitter 1.5 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 1.5 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 1.5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 1.5 V   Width 0.205" (5.2mm)  NTE Electronics, Inc. Width 0.205" (5.2mm)  Bipolar Transistors Width 0.205" (5.2mm)  NTE Electronics, Inc. Bipolar Transistors Width 0.205" (5.2mm)