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N-Channel Enhancement Mode MOSFET, 8.0 Amps, 125 Watts, -55°C to +150°C, M3 Screw Mounting

Dynamic dv/dt rating

Repetitive avalanche rated

Fast switching

Ease of paralleling

Simple drive requirements

Brand/Series	MOSFET Series
Capacitance, Input	1300 pF @ 25 V
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
Current, Drain	8 A
Fall Time	20 ns (Typ.)
Gate Charge, Total	63 nC
Height	0.61" (15.49mm)
Length	0.42" (10.67mm)
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	3
Operating and Storage Temperature	-55 to +150 °C
Package Type	TO-220
Polarization	N-Channel
Power Dissipation	125 W
Resistance, Drain to Source On	0.85 Ω
Resistance, Thermal, Junction to Case	1 °C⁄W
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Thermal Resistance, Junction to Ambient	62 °C⁄W
Time, Turn-Off Delay	49 ns
Time, Turn-On Delay	14 ns
Transconductance, Forward	4.9 S
Typical Gate Charge @ Vgs	Maximum of 63 nC @ 10 V
Voltage, Breakdown, Drain to Source	500 V
Voltage, Drain to Source	500 V
Voltage, Forward, Diode	2 V
Voltage, Gate to Source	±20 V
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Brand/Series MOSFET Series  NTE Electronics, Inc. Brand/Series MOSFET Series  MOSFET Transistors Brand/Series MOSFET Series  NTE Electronics, Inc. MOSFET Transistors Brand/Series MOSFET Series   Capacitance, Input 1300 pF @ 25 V  NTE Electronics, Inc. Capacitance, Input 1300 pF @ 25 V  MOSFET Transistors Capacitance, Input 1300 pF @ 25 V  NTE Electronics, Inc. MOSFET Transistors Capacitance, Input 1300 pF @ 25 V   Channel Mode Enhancement  NTE Electronics, Inc. Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  NTE Electronics, Inc. MOSFET Transistors Channel Mode Enhancement   Channel Type N  NTE Electronics, Inc. Channel Type N  MOSFET Transistors Channel Type N  NTE Electronics, Inc. MOSFET Transistors Channel Type N   Configuration Single  NTE Electronics, Inc. Configuration Single  MOSFET Transistors Configuration Single  NTE Electronics, Inc. MOSFET Transistors Configuration Single   Current, Drain 8 A  NTE Electronics, Inc. Current, Drain 8 A  MOSFET Transistors Current, Drain 8 A  NTE Electronics, Inc. MOSFET Transistors Current, Drain 8 A   Fall Time 20 ns (Typ.)  NTE Electronics, Inc. Fall Time 20 ns (Typ.)  MOSFET Transistors Fall Time 20 ns (Typ.)  NTE Electronics, Inc. MOSFET Transistors Fall Time 20 ns (Typ.)   Gate Charge, Total 63 nC  NTE Electronics, Inc. Gate Charge, Total 63 nC  MOSFET Transistors Gate Charge, Total 63 nC  NTE Electronics, Inc. MOSFET Transistors Gate Charge, Total 63 nC   Height 0.61" (15.49mm)  NTE Electronics, Inc. Height 0.61" (15.49mm)  MOSFET Transistors Height 0.61" (15.49mm)  NTE Electronics, Inc. MOSFET Transistors Height 0.61" (15.49mm)   Length 0.42" (10.67mm)  NTE Electronics, Inc. Length 0.42" (10.67mm)  MOSFET Transistors Length 0.42" (10.67mm)  NTE Electronics, Inc. MOSFET Transistors Length 0.42" (10.67mm)   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  NTE Electronics, Inc. MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  NTE Electronics, Inc. MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  MOSFET Transistors Number of Pins 3  NTE Electronics, Inc. MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to +150 °C  NTE Electronics, Inc. Operating and Storage Temperature -55 to +150 °C  MOSFET Transistors Operating and Storage Temperature -55 to +150 °C  NTE Electronics, Inc. MOSFET Transistors Operating and Storage Temperature -55 to +150 °C   Package Type TO-220  NTE Electronics, Inc. Package Type TO-220  MOSFET Transistors Package Type TO-220  NTE Electronics, Inc. MOSFET Transistors Package Type TO-220   Polarization N-Channel  NTE Electronics, Inc. Polarization N-Channel  MOSFET Transistors Polarization N-Channel  NTE Electronics, Inc. MOSFET Transistors Polarization N-Channel   Power Dissipation 125 W  NTE Electronics, Inc. Power Dissipation 125 W  MOSFET Transistors Power Dissipation 125 W  NTE Electronics, Inc. MOSFET Transistors Power Dissipation 125 W   Resistance, Drain to Source On 0.85 Ω  NTE Electronics, Inc. Resistance, Drain to Source On 0.85 Ω  MOSFET Transistors Resistance, Drain to Source On 0.85 Ω  NTE Electronics, Inc. MOSFET Transistors Resistance, Drain to Source On 0.85 Ω   Resistance, Thermal, Junction to Case 1 °C⁄W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 1 °C⁄W  MOSFET Transistors Resistance, Thermal, Junction to Case 1 °C⁄W  NTE Electronics, Inc. MOSFET Transistors Resistance, Thermal, Junction to Case 1 °C⁄W   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 62 °C⁄W  NTE Electronics, Inc. Thermal Resistance, Junction to Ambient 62 °C⁄W  MOSFET Transistors Thermal Resistance, Junction to Ambient 62 °C⁄W  NTE Electronics, Inc. MOSFET Transistors Thermal Resistance, Junction to Ambient 62 °C⁄W   Time, Turn-Off Delay 49 ns  NTE Electronics, Inc. Time, Turn-Off Delay 49 ns  MOSFET Transistors Time, Turn-Off Delay 49 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-Off Delay 49 ns   Time, Turn-On Delay 14 ns  NTE Electronics, Inc. Time, Turn-On Delay 14 ns  MOSFET Transistors Time, Turn-On Delay 14 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-On Delay 14 ns   Transconductance, Forward 4.9 S  NTE Electronics, Inc. Transconductance, Forward 4.9 S  MOSFET Transistors Transconductance, Forward 4.9 S  NTE Electronics, Inc. MOSFET Transistors Transconductance, Forward 4.9 S   Typical Gate Charge @ Vgs Maximum of 63 nC @ 10 V  NTE Electronics, Inc. Typical Gate Charge @ Vgs Maximum of 63 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 63 nC @ 10 V  NTE Electronics, Inc. MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 63 nC @ 10 V   Voltage, Breakdown, Drain to Source 500 V  NTE Electronics, Inc. Voltage, Breakdown, Drain to Source 500 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 500 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Breakdown, Drain to Source 500 V   Voltage, Drain to Source 500 V  NTE Electronics, Inc. Voltage, Drain to Source 500 V  MOSFET Transistors Voltage, Drain to Source 500 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Drain to Source 500 V   Voltage, Forward, Diode 2 V  NTE Electronics, Inc. Voltage, Forward, Diode 2 V  MOSFET Transistors Voltage, Forward, Diode 2 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Forward, Diode 2 V   Voltage, Gate to Source ±20 V  NTE Electronics, Inc. Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Gate to Source ±20 V