| Brand/Series |
Transistor Series |
|
| Configuration |
Common Base |
|
| Current, Collector |
5 A |
|
| Current, Continuous Collector |
5 A |
|
| Current, Gain |
1000 |
|
| Current, Output |
5 A |
|
| Device Dissipation |
65 W |
|
| Dimensions |
10.67 L x 15.49 H mm |
|
| Gain, DC Current, Minimum |
1000 |
|
| Height |
0.61" (15.49mm) |
|
| Input Voltage |
5 V |
|
| Length |
0.42" (10.67mm) |
|
| Material |
Si |
|
| Mounting Type |
Through Hole |
|
| Number of Elements per Chip |
2 |
|
| Number of Pins |
3 |
|
| Package Type |
TO-220 |
|
| Polarity |
NPN |
|
| Power Dissipation |
65 W |
|
| Primary Type |
Si |
|
| Resistance, Thermal, Junction to Ambient |
62.5 °C/W |
|
| Resistance, Thermal, Junction to Case |
1.92 °C⁄W |
|
| Temperature Range, Junction, Operating |
-65 to +150 °C |
|
| Temperature, Operating, Maximum |
+150 °C |
|
| Temperature, Operating, Minimum |
-65 °C |
|
| Temperature, Operating, Range |
-65 to +150 °C |
|
| Thermal Resistance, Junction to Ambient |
62.5 °C⁄W |
|
| Transistor Polarity |
NPN |
|
| Transistor Type |
NPN |
|
| Type |
Amplifier, Power |
|
| Voltage, Breakdown, Collector to Emitter |
100 V |
|
| Voltage, Collector to Base |
100 V |
|
| Voltage, Collector to Emitter |
100 V |
|
| Voltage, Collector to Emitter, Saturation |
4 V |
|
| Voltage, Emitter to Base |
5 V |
|
| Voltage, Output |
100 V |
|
| 关键词 |