| Configuration |
Common Base |
|
| Current, Collector |
10 A |
|
| Current, Gain |
15 |
|
| Diameter |
22.2 mm |
|
| Dimensions |
22.2 Dia. x 8.89 H mm |
|
| Frequency, Operating |
10 MHz |
|
| Gain, DC Current, Minimum |
15 |
|
| Height |
0.35" (8.89mm) |
|
| Material |
Si |
|
| Mounting Type |
Through Hole |
|
| Number of Elements per Chip |
1 |
|
| Number of Pins |
2 |
|
| Package Type |
TO-3 |
|
| Polarity |
NPN |
|
| Power Dissipation |
100 W |
|
| Primary Type |
Si |
|
| Resistance, Thermal, Junction to Case |
1.75 °C/W |
|
| Temperature, Operating, Maximum |
+200 °C |
|
| Temperature, Operating, Minimum |
-65 °C |
|
| Temperature, Operating, Range |
-65 to +200 °C |
|
| Transistor Type |
NPN |
|
| Type |
Horizontal Output, Switch |
|
| Voltage, Breakdown, Collector to Emitter |
325 V |
|
| Voltage, Collector to Emitter |
325 V |
|
| Voltage, Collector to Emitter, Saturation |
3.3 V |
|
| Voltage, Emitter to Base |
8 V |
|
| Voltage, Saturation, Base to Emitter |
2.2 V |
|
| Voltage, Saturation, Collector to Emitter |
3.3 V |
|
| Voltage, Sustaining, Collector to Emitter |
325 V |
|
| 关键词 |