| Brand/Series |
Transistor Series |
|
| Configuration |
Common Base |
|
| Current, Collector |
50 mA |
|
| Current, Gain |
25 |
|
| Device Dissipation |
200 mW |
|
| Diameter |
5.58 mm |
|
| Dimensions |
5.58 Dia. x 4.82 H mm |
|
| Frequency, Operating |
1400 MHz |
|
| Gain, DC Current, Maximum |
250 @ VCE == 5V, IC == 2mA, f == 1kHz |
|
| Gain, DC Current, Minimum |
25 |
|
| Height |
0.19" (4.82mm) |
|
| Material |
Si |
|
| Mounting Type |
Through Hole |
|
| Number of Elements per Chip |
1 |
|
| Number of Pins |
2 |
|
| Package Type |
TO-92 |
|
| Polarity |
NPN |
|
| Power Dissipation |
200 mW |
|
| Primary Type |
Si |
|
| Temperature Range, Junction, Operating |
No value |
|
| Temperature, Operating, Maximum |
+200 °C |
|
| Temperature, Operating, Minimum |
-65 °C |
|
| Temperature, Operating, Range |
-65 to +200 °C |
|
| Transistor Polarity |
NPN |
|
| Transistor Type |
NPN |
|
| Type |
High Power Gain, Low Noise |
|
| Voltage, Breakdown, Collector to Emitter |
15 V |
|
| Voltage, Collector to Base |
30 V |
|
| Voltage, Collector to Emitter |
15 V |
|
| Voltage, Emitter to Base |
3 V |
|
| Voltage, Saturation, Collector to Emitter |
No Value |
|
| 关键词 |