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NTE324 - 

TRANSISTOR NPN SILICON 120V IC=1.5A TO-39 CASE GENERAL PURPOSE AMP SWITCH COMP'L

NTE Electronics, Inc. NTE324
声明：图片仅供参考，请以实物为准！
制造商产品编号：
NTE324
仓库库存编号：
70215964
技术数据表：
View NTE324 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

NTE324产品概述

Silicon Complementaryyy Transistors

NTE324产品信息

  Brand/Series  Transistor Series  
  Configuration  Common Base  
  Current, Collector  1 A  
  Current, Continuous Collector  1 A  
  Current, Gain  5  
  Device Dissipation  10 W  
  Diameter  9.39 mm  
  Dimensions  9.39 Dia. x 6.6 H mm  
  Frequency, Operating  30 MHz  
  Gain, DC Current, Maximum  5 @ 1 A  
  Gain, DC Current, Minimum  40 @ 250 mA  
  Height  0.26" (6.6mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-39  
  Polarity  NPN  
  Power Dissipation  10 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  17.4 °C/W  
  Temperature Range, Junction, Operating  200 °C  
  Temperature, Operating, Maximum  +200 °C  
  Temperature, Operating, Range  Maximum of +200 °C  
  Thermal Resistance, Junction to Ambient  175 °C⁄W  
  Transistor Polarity  NPN  
  Transistor Type  NPN  
  Type  Driver, Power  
  Voltage, Breakdown, Collector to Emitter  120 V  
  Voltage, Collector to Base  120 V  
  Voltage, Collector to Emitter  120 V  
  Voltage, Collector to Emitter, Saturation  2 V  
  Voltage, Emitter to Base  4 V  
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NTE324相关搜索

Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 1 A  NTE Electronics, Inc. Current, Collector 1 A  Bipolar Transistors Current, Collector 1 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 1 A   Current, Continuous Collector 1 A  NTE Electronics, Inc. Current, Continuous Collector 1 A  Bipolar Transistors Current, Continuous Collector 1 A  NTE Electronics, Inc. Bipolar Transistors Current, Continuous Collector 1 A   Current, Gain 5  NTE Electronics, Inc. Current, Gain 5  Bipolar Transistors Current, Gain 5  NTE Electronics, Inc. Bipolar Transistors Current, Gain 5   Device Dissipation 10 W  NTE Electronics, Inc. Device Dissipation 10 W  Bipolar Transistors Device Dissipation 10 W  NTE Electronics, Inc. Bipolar Transistors Device Dissipation 10 W   Diameter 9.39 mm  NTE Electronics, Inc. Diameter 9.39 mm  Bipolar Transistors Diameter 9.39 mm  NTE Electronics, Inc. Bipolar Transistors Diameter 9.39 mm   Dimensions 9.39 Dia. x 6.6 H mm  NTE Electronics, Inc. Dimensions 9.39 Dia. x 6.6 H mm  Bipolar Transistors Dimensions 9.39 Dia. x 6.6 H mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 9.39 Dia. x 6.6 H mm   Frequency, Operating 30 MHz  NTE Electronics, Inc. Frequency, Operating 30 MHz  Bipolar Transistors Frequency, Operating 30 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 30 MHz   Gain, DC Current, Maximum 5 @ 1 A  NTE Electronics, Inc. Gain, DC Current, Maximum 5 @ 1 A  Bipolar Transistors Gain, DC Current, Maximum 5 @ 1 A  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Maximum 5 @ 1 A   Gain, DC Current, Minimum 40 @ 250 mA  NTE Electronics, Inc. Gain, DC Current, Minimum 40 @ 250 mA  Bipolar Transistors Gain, DC Current, Minimum 40 @ 250 mA  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 40 @ 250 mA   Height 0.26" (6.6mm)  NTE Electronics, Inc. Height 0.26" (6.6mm)  Bipolar Transistors Height 0.26" (6.6mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.26" (6.6mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-39  NTE Electronics, Inc. Package Type TO-39  Bipolar Transistors Package Type TO-39  NTE Electronics, Inc. Bipolar Transistors Package Type TO-39   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 10 W  NTE Electronics, Inc. Power Dissipation 10 W  Bipolar Transistors Power Dissipation 10 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 10 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 17.4 °C/W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 17.4 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 17.4 °C/W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 17.4 °C/W   Temperature Range, Junction, Operating 200 °C  NTE Electronics, Inc. Temperature Range, Junction, Operating 200 °C  Bipolar Transistors Temperature Range, Junction, Operating 200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature Range, Junction, Operating 200 °C   Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Range Maximum of +200 °C  NTE Electronics, Inc. Temperature, Operating, Range Maximum of +200 °C  Bipolar Transistors Temperature, Operating, Range Maximum of +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range Maximum of +200 °C   Thermal Resistance, Junction to Ambient 175 °C⁄W  NTE Electronics, Inc. Thermal Resistance, Junction to Ambient 175 °C⁄W  Bipolar Transistors Thermal Resistance, Junction to Ambient 175 °C⁄W  NTE Electronics, Inc. Bipolar Transistors Thermal Resistance, Junction to Ambient 175 °C⁄W   Transistor Polarity NPN  NTE Electronics, Inc. Transistor Polarity NPN  Bipolar Transistors Transistor Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity NPN   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type Driver, Power  NTE Electronics, Inc. Type Driver, Power  Bipolar Transistors Type Driver, Power  NTE Electronics, Inc. Bipolar Transistors Type Driver, Power   Voltage, Breakdown, Collector to Emitter 120 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 120 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 120 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 120 V   Voltage, Collector to Base 120 V  NTE Electronics, Inc. Voltage, Collector to Base 120 V  Bipolar Transistors Voltage, Collector to Base 120 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 120 V   Voltage, Collector to Emitter 120 V  NTE Electronics, Inc. Voltage, Collector to Emitter 120 V  Bipolar Transistors Voltage, Collector to Emitter 120 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 120 V   Voltage, Collector to Emitter, Saturation 2 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 2 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 2 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 2 V   Voltage, Emitter to Base 4 V  NTE Electronics, Inc. Voltage, Emitter to Base 4 V  Bipolar Transistors Voltage, Emitter to Base 4 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 4 V  
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