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Silicon Complementary Transistors

Brand/Series	Transistor Series
Configuration	Common Base
Current, Collector	16 A
Current, Continuous Collector	16 A
Current, Gain	5
Device Dissipation	250 W
Diameter	22.2 mm
Dimensions	22.2 Dia. x 8.89 H mm
Frequency, Operating	4 MHz
Gain, DC Current, Maximum	60 @ 4 V, 8 A
Gain, DC Current, Minimum	15 @ 4 V, 8 A
Height	0.35" (8.89mm)
Material	Si
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	3
Package Type	TO-3
Polarity	NPN
Power Dissipation	250 W
Primary Type	Si
Resistance, Thermal, Junction to Case	0.7 °C/W
Temperature Range, Junction, Operating	-65 to 200 °C
Temperature, Operating, Maximum	+200 °C
Temperature, Operating, Minimum	-65 °C
Temperature, Operating, Range	-65 to +200 °C
Transistor Polarity	NPN
Transistor Type	NPN
Type	High DC Current Gain, Power
Voltage, Breakdown, Collector to Emitter	250 V
Voltage, Collector to Base	400 V
Voltage, Collector to Emitter	250 V
Voltage, Collector to Emitter, Saturation	4 V
Voltage, Emitter to Base	5 V
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• HARTING
  Power Tool, Industrial; Removal; 3 mm; 12 mm
  
  型号：09990000012
  仓库库存编号：70104607
  
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• GC Electronics
  SILICONE HEAT SINK COMPOUND, TUBE, 1 FL. OZ.
  
  型号：10-8109
  仓库库存编号：70159792
  
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• NTE Electronics, Inc.
  TRANSISTOR NPN SILICON 100V 30AMP TO-3 CASE HIGH POWER AUDIO AMP
  
  型号：NTE181
  仓库库存编号：70214676
  
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• NTE Electronics, Inc.
  ZENER DIODE 1 WATT 6.2V 5% DO-41
  
  型号：NTE137A
  仓库库存编号：70215820
  
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• NTE Electronics, Inc.
  TRANSISTOR - PNP SILICONE - GENERAL PURPOSE HIGH POWER AUDIO AMP TO3
  
  型号：NTE68
  仓库库存编号：70227571
  
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Brand/Series Transistor Series  NTE Electronics, Inc. Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  NTE Electronics, Inc. Bipolar Transistors Brand/Series Transistor Series   Configuration Common Base  NTE Electronics, Inc. Configuration Common Base  Bipolar Transistors Configuration Common Base  NTE Electronics, Inc. Bipolar Transistors Configuration Common Base   Current, Collector 16 A  NTE Electronics, Inc. Current, Collector 16 A  Bipolar Transistors Current, Collector 16 A  NTE Electronics, Inc. Bipolar Transistors Current, Collector 16 A   Current, Continuous Collector 16 A  NTE Electronics, Inc. Current, Continuous Collector 16 A  Bipolar Transistors Current, Continuous Collector 16 A  NTE Electronics, Inc. Bipolar Transistors Current, Continuous Collector 16 A   Current, Gain 5  NTE Electronics, Inc. Current, Gain 5  Bipolar Transistors Current, Gain 5  NTE Electronics, Inc. Bipolar Transistors Current, Gain 5   Device Dissipation 250 W  NTE Electronics, Inc. Device Dissipation 250 W  Bipolar Transistors Device Dissipation 250 W  NTE Electronics, Inc. Bipolar Transistors Device Dissipation 250 W   Diameter 22.2 mm  NTE Electronics, Inc. Diameter 22.2 mm  Bipolar Transistors Diameter 22.2 mm  NTE Electronics, Inc. Bipolar Transistors Diameter 22.2 mm   Dimensions 22.2 Dia. x 8.89 H mm  NTE Electronics, Inc. Dimensions 22.2 Dia. x 8.89 H mm  Bipolar Transistors Dimensions 22.2 Dia. x 8.89 H mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 22.2 Dia. x 8.89 H mm   Frequency, Operating 4 MHz  NTE Electronics, Inc. Frequency, Operating 4 MHz  Bipolar Transistors Frequency, Operating 4 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 4 MHz   Gain, DC Current, Maximum 60 @ 4 V, 8 A  NTE Electronics, Inc. Gain, DC Current, Maximum 60 @ 4 V, 8 A  Bipolar Transistors Gain, DC Current, Maximum 60 @ 4 V, 8 A  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Maximum 60 @ 4 V, 8 A   Gain, DC Current, Minimum 15 @ 4 V, 8 A  NTE Electronics, Inc. Gain, DC Current, Minimum 15 @ 4 V, 8 A  Bipolar Transistors Gain, DC Current, Minimum 15 @ 4 V, 8 A  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 15 @ 4 V, 8 A   Height 0.35" (8.89mm)  NTE Electronics, Inc. Height 0.35" (8.89mm)  Bipolar Transistors Height 0.35" (8.89mm)  NTE Electronics, Inc. Bipolar Transistors Height 0.35" (8.89mm)   Material Si  NTE Electronics, Inc. Material Si  Bipolar Transistors Material Si  NTE Electronics, Inc. Bipolar Transistors Material Si   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  NTE Electronics, Inc. Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  NTE Electronics, Inc. Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  Bipolar Transistors Number of Pins 3  NTE Electronics, Inc. Bipolar Transistors Number of Pins 3   Package Type TO-3  NTE Electronics, Inc. Package Type TO-3  Bipolar Transistors Package Type TO-3  NTE Electronics, Inc. Bipolar Transistors Package Type TO-3   Polarity NPN  NTE Electronics, Inc. Polarity NPN  Bipolar Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 250 W  NTE Electronics, Inc. Power Dissipation 250 W  Bipolar Transistors Power Dissipation 250 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 250 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 0.7 °C/W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 0.7 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 0.7 °C/W  NTE Electronics, Inc. Bipolar Transistors Resistance, Thermal, Junction to Case 0.7 °C/W   Temperature Range, Junction, Operating -65 to 200 °C  NTE Electronics, Inc. Temperature Range, Junction, Operating -65 to 200 °C  Bipolar Transistors Temperature Range, Junction, Operating -65 to 200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature Range, Junction, Operating -65 to 200 °C   Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Temperature, Operating, Range -65 to +200 °C  Bipolar Transistors Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -65 to +200 °C   Transistor Polarity NPN  NTE Electronics, Inc. Transistor Polarity NPN  Bipolar Transistors Transistor Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity NPN   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type High DC Current Gain, Power  NTE Electronics, Inc. Type High DC Current Gain, Power  Bipolar Transistors Type High DC Current Gain, Power  NTE Electronics, Inc. Bipolar Transistors Type High DC Current Gain, Power   Voltage, Breakdown, Collector to Emitter 250 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 250 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 250 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 250 V   Voltage, Collector to Base 400 V  NTE Electronics, Inc. Voltage, Collector to Base 400 V  Bipolar Transistors Voltage, Collector to Base 400 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 400 V   Voltage, Collector to Emitter 250 V  NTE Electronics, Inc. Voltage, Collector to Emitter 250 V  Bipolar Transistors Voltage, Collector to Emitter 250 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 250 V   Voltage, Collector to Emitter, Saturation 4 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 4 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 4 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 4 V   Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 5 V