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N Channel Enhancement Mode MOSFETs

Brand/Series	MOSFET Series
Capacitance, Input	780 pF @ 25 V
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
Current, Drain	4.5 A
Gate Charge, Total	18 nC
Height	0.61" (15.49mm)
Length	0.42" (10.67mm)
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	3
Package Type	TO-220
Polarization	N-Channel
Power Dissipation	75 W
Resistance, Drain to Source On	1.5 Ω
Resistance, Thermal, Junction to Case	1.67 K⁄W
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Time, Turn-Off Delay	37 ns
Time, Turn-On Delay	11 ns
Transconductance, Forward	4.4 S
Typical Gate Charge @ Vgs	Maximum of 18 nC @ 10 V
Voltage, Breakdown, Drain to Source	400 V
Voltage, Drain to Source	400 V
Voltage, Forward, Diode	1.6 V
Voltage, Gate to Source	±20 V
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• NTE Electronics, Inc.
  T-PNP SI-LINEAR AMP & SW
  
  型号：NTE397
  仓库库存编号：70215871
  
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Brand/Series MOSFET Series  NTE Electronics, Inc. Brand/Series MOSFET Series  MOSFET Transistors Brand/Series MOSFET Series  NTE Electronics, Inc. MOSFET Transistors Brand/Series MOSFET Series   Capacitance, Input 780 pF @ 25 V  NTE Electronics, Inc. Capacitance, Input 780 pF @ 25 V  MOSFET Transistors Capacitance, Input 780 pF @ 25 V  NTE Electronics, Inc. MOSFET Transistors Capacitance, Input 780 pF @ 25 V   Channel Mode Enhancement  NTE Electronics, Inc. Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  NTE Electronics, Inc. MOSFET Transistors Channel Mode Enhancement   Channel Type N  NTE Electronics, Inc. Channel Type N  MOSFET Transistors Channel Type N  NTE Electronics, Inc. MOSFET Transistors Channel Type N   Configuration Single  NTE Electronics, Inc. Configuration Single  MOSFET Transistors Configuration Single  NTE Electronics, Inc. MOSFET Transistors Configuration Single   Current, Drain 4.5 A  NTE Electronics, Inc. Current, Drain 4.5 A  MOSFET Transistors Current, Drain 4.5 A  NTE Electronics, Inc. MOSFET Transistors Current, Drain 4.5 A   Gate Charge, Total 18 nC  NTE Electronics, Inc. Gate Charge, Total 18 nC  MOSFET Transistors Gate Charge, Total 18 nC  NTE Electronics, Inc. MOSFET Transistors Gate Charge, Total 18 nC   Height 0.61" (15.49mm)  NTE Electronics, Inc. Height 0.61" (15.49mm)  MOSFET Transistors Height 0.61" (15.49mm)  NTE Electronics, Inc. MOSFET Transistors Height 0.61" (15.49mm)   Length 0.42" (10.67mm)  NTE Electronics, Inc. Length 0.42" (10.67mm)  MOSFET Transistors Length 0.42" (10.67mm)  NTE Electronics, Inc. MOSFET Transistors Length 0.42" (10.67mm)   Mounting Type Through Hole  NTE Electronics, Inc. Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  NTE Electronics, Inc. MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  NTE Electronics, Inc. Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  NTE Electronics, Inc. MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  NTE Electronics, Inc. Number of Pins 3  MOSFET Transistors Number of Pins 3  NTE Electronics, Inc. MOSFET Transistors Number of Pins 3   Package Type TO-220  NTE Electronics, Inc. Package Type TO-220  MOSFET Transistors Package Type TO-220  NTE Electronics, Inc. MOSFET Transistors Package Type TO-220   Polarization N-Channel  NTE Electronics, Inc. Polarization N-Channel  MOSFET Transistors Polarization N-Channel  NTE Electronics, Inc. MOSFET Transistors Polarization N-Channel   Power Dissipation 75 W  NTE Electronics, Inc. Power Dissipation 75 W  MOSFET Transistors Power Dissipation 75 W  NTE Electronics, Inc. MOSFET Transistors Power Dissipation 75 W   Resistance, Drain to Source On 1.5 Ω  NTE Electronics, Inc. Resistance, Drain to Source On 1.5 Ω  MOSFET Transistors Resistance, Drain to Source On 1.5 Ω  NTE Electronics, Inc. MOSFET Transistors Resistance, Drain to Source On 1.5 Ω   Resistance, Thermal, Junction to Case 1.67 K⁄W  NTE Electronics, Inc. Resistance, Thermal, Junction to Case 1.67 K⁄W  MOSFET Transistors Resistance, Thermal, Junction to Case 1.67 K⁄W  NTE Electronics, Inc. MOSFET Transistors Resistance, Thermal, Junction to Case 1.67 K⁄W   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  NTE Electronics, Inc. MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 37 ns  NTE Electronics, Inc. Time, Turn-Off Delay 37 ns  MOSFET Transistors Time, Turn-Off Delay 37 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-Off Delay 37 ns   Time, Turn-On Delay 11 ns  NTE Electronics, Inc. Time, Turn-On Delay 11 ns  MOSFET Transistors Time, Turn-On Delay 11 ns  NTE Electronics, Inc. MOSFET Transistors Time, Turn-On Delay 11 ns   Transconductance, Forward 4.4 S  NTE Electronics, Inc. Transconductance, Forward 4.4 S  MOSFET Transistors Transconductance, Forward 4.4 S  NTE Electronics, Inc. MOSFET Transistors Transconductance, Forward 4.4 S   Typical Gate Charge @ Vgs Maximum of 18 nC @ 10 V  NTE Electronics, Inc. Typical Gate Charge @ Vgs Maximum of 18 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 18 nC @ 10 V  NTE Electronics, Inc. MOSFET Transistors Typical Gate Charge @ Vgs Maximum of 18 nC @ 10 V   Voltage, Breakdown, Drain to Source 400 V  NTE Electronics, Inc. Voltage, Breakdown, Drain to Source 400 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 400 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Breakdown, Drain to Source 400 V   Voltage, Drain to Source 400 V  NTE Electronics, Inc. Voltage, Drain to Source 400 V  MOSFET Transistors Voltage, Drain to Source 400 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Drain to Source 400 V   Voltage, Forward, Diode 1.6 V  NTE Electronics, Inc. Voltage, Forward, Diode 1.6 V  MOSFET Transistors Voltage, Forward, Diode 1.6 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Forward, Diode 1.6 V   Voltage, Gate to Source ±20 V  NTE Electronics, Inc. Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  NTE Electronics, Inc. MOSFET Transistors Voltage, Gate to Source ±20 V