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Silicon NPN Transistors

Configuration	Common Base
Current, Collector	6 A
Current, Continuous Collector	6 A
Current, Emitter	-6 A
Current, Gain	8
Device Dissipation	50 W
Diameter	22.2 mm
Dimensions	22.2 Dia. x 8.89 H mm
Frequency, Operating	3 MHz
Gain, DC Current, Minimum	8
Height	0.35" (8.89mm)
Material	Si
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	2
Package Type	TO-3
Polarity	NPN
Power Dissipation	50 W
Primary Type	Si
Temperature Range, Junction, Operating	150 °C
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Range	Maximum of +150 °C
Transistor Polarity	NPN
Transistor Type	NPN
Type	High Voltage
Voltage, Breakdown, Collector to Emitter	600 V
Voltage, Collector to Base	1500 V
Voltage, Collector to Emitter	600 V
Voltage, Collector to Emitter, Saturation	5 V
Voltage, Emitter to Base	5 V
Voltage, Saturation, Base to Emitter	1.5 V
关键词

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W  Bipolar Transistors Device Dissipation 50 W  NTE Electronics, Inc. Bipolar Transistors Device Dissipation 50 W   Diameter 22.2 mm  NTE Electronics, Inc. Diameter 22.2 mm  Bipolar Transistors Diameter 22.2 mm  NTE Electronics, Inc. Bipolar Transistors Diameter 22.2 mm   Dimensions 22.2 Dia. x 8.89 H mm  NTE Electronics, Inc. Dimensions 22.2 Dia. x 8.89 H mm  Bipolar Transistors Dimensions 22.2 Dia. x 8.89 H mm  NTE Electronics, Inc. Bipolar Transistors Dimensions 22.2 Dia. x 8.89 H mm   Frequency, Operating 3 MHz  NTE Electronics, Inc. Frequency, Operating 3 MHz  Bipolar Transistors Frequency, Operating 3 MHz  NTE Electronics, Inc. Bipolar Transistors Frequency, Operating 3 MHz   Gain, DC Current, Minimum 8  NTE Electronics, Inc. Gain, DC Current, Minimum 8  Bipolar Transistors Gain, DC Current, Minimum 8  NTE Electronics, Inc. Bipolar Transistors Gain, DC Current, Minimum 8   Height 0.35" (8.89mm)  NTE Electronics, Inc. Height 0.35" (8.89mm)  Bipolar Transistors Height 0.35" 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Transistors Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Polarity NPN   Power Dissipation 50 W  NTE Electronics, Inc. Power Dissipation 50 W  Bipolar Transistors Power Dissipation 50 W  NTE Electronics, Inc. Bipolar Transistors Power Dissipation 50 W   Primary Type Si  NTE Electronics, Inc. Primary Type Si  Bipolar Transistors Primary Type Si  NTE Electronics, Inc. Bipolar Transistors Primary Type Si   Temperature Range, Junction, Operating 150 °C  NTE Electronics, Inc. Temperature Range, Junction, Operating 150 °C  Bipolar Transistors Temperature Range, Junction, Operating 150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature Range, Junction, Operating 150 °C   Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Range Maximum of +150 °C  NTE Electronics, Inc. Temperature, Operating, Range Maximum of +150 °C  Bipolar Transistors Temperature, Operating, Range Maximum of +150 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range Maximum of +150 °C   Transistor Polarity NPN  NTE Electronics, Inc. Transistor Polarity NPN  Bipolar Transistors Transistor Polarity NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Polarity NPN   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type High Voltage  NTE Electronics, Inc. Type High Voltage  Bipolar Transistors Type High Voltage  NTE Electronics, Inc. Bipolar Transistors Type High Voltage   Voltage, Breakdown, Collector to Emitter 600 V  NTE Electronics, Inc. Voltage, Breakdown, Collector to Emitter 600 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 600 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Breakdown, Collector to Emitter 600 V   Voltage, Collector to Base 1500 V  NTE Electronics, Inc. Voltage, Collector to Base 1500 V  Bipolar Transistors Voltage, Collector to Base 1500 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Base 1500 V   Voltage, Collector to Emitter 600 V  NTE Electronics, Inc. Voltage, Collector to Emitter 600 V  Bipolar Transistors Voltage, Collector to Emitter 600 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 600 V   Voltage, Collector to Emitter, Saturation 5 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 5 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 5 V   Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 5 V   Voltage, Saturation, Base to Emitter 1.5 V  NTE Electronics, Inc. Voltage, Saturation, Base to Emitter 1.5 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 1.5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Saturation, Base to Emitter 1.5 V