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Configuration	Common Base
Current, Collector	50 A
Current, Gain	10
Current, Output	50 A
Diameter	22.2 mm
Dimensions	22.2 Dia. x 8.89 H mm
Height	0.35" (8.89mm)
Input Voltage	8 V
Material	Si
Mounting Type	Through Hole
Number of Elements per Chip	2
Number of Pins	3
Package Type	TO-3
Polarity	NPN
Power Dissipation	250 W
Primary Type	Si
Resistance, Thermal, Junction to Ambient	0.7 °C/W
Temperature, Operating, Maximum	+200 °C
Temperature, Operating, Minimum	-65 °C
Temperature, Operating, Range	-65 to +200 °C
Transistor Type	NPN
Type	High Voltage, Power
Voltage, Collector to Emitter	400 V
Voltage, Collector to Emitter, Saturation	5 V
Voltage, Emitter to Base	8 V
Voltage, Output	400 V
Voltage, Saturation, Base to Emitter	2.75 V
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• Hammond Manufacturing
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  型号：1591GF2SBK
  仓库库存编号：70164799
  
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• NTE Electronics, Inc.
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  型号：NTE197
  仓库库存编号：70215731
  
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• NTE Electronics, Inc.
  SILICON CONTROLLED RECTIFIER- 400VRM 35A TO-48
  
  型号：NTE5545
  仓库库存编号：70215801
  
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Transistors Resistance, Thermal, Junction to Ambient 0.7 °C/W   Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Temperature, Operating, Maximum +200 °C  Bipolar Transistors Temperature, Operating, Maximum +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Maximum +200 °C   Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Temperature, Operating, Range -65 to +200 °C  Bipolar Transistors Temperature, Operating, Range -65 to +200 °C  NTE Electronics, Inc. Bipolar Transistors Temperature, Operating, Range -65 to +200 °C   Transistor Type NPN  NTE Electronics, Inc. Transistor Type NPN  Bipolar Transistors Transistor Type NPN  NTE Electronics, Inc. Bipolar Transistors Transistor Type NPN   Type High Voltage, Power  NTE Electronics, Inc. Type High Voltage, Power  Bipolar Transistors Type High Voltage, Power  NTE Electronics, Inc. Bipolar Transistors Type High Voltage, Power   Voltage, Collector to Emitter 400 V  NTE Electronics, Inc. Voltage, Collector to Emitter 400 V  Bipolar Transistors Voltage, Collector to Emitter 400 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter 400 V   Voltage, Collector to Emitter, Saturation 5 V  NTE Electronics, Inc. Voltage, Collector to Emitter, Saturation 5 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 5 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Collector to Emitter, Saturation 5 V   Voltage, Emitter to Base 8 V  NTE Electronics, Inc. Voltage, Emitter to Base 8 V  Bipolar Transistors Voltage, Emitter to Base 8 V  NTE Electronics, Inc. Bipolar Transistors Voltage, Emitter to Base 8 V   Voltage, Output 400 V  NTE Electronics, Inc. Voltage, Output 400 V  Bipolar Transistors Voltage, 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