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2N3906G - 

TRANSISTOR; TO-92; PNP; 40; 40; 5.0; 200 COLLECTOR; -55 TO +155; 40 VDC (MIN.)

ON Semiconductor 2N3906G
声明：图片仅供参考，请以实物为准！
制造商产品编号：
2N3906G
仓库库存编号：
70099475
技术数据表：
View 2N3906G Datasheet Datasheet
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由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

2N3906G产品信息

  Brand/Series  2N Bipolar Series  
  Current, Collector  200 mA  
  Current, Gain  30  
  Frequency  250 MHz  
  Package Type  TO-92  
  Polarity  PNP  
  Power Dissipation  1.5 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  83.3 °C/W  
  Type  General Purpose  
  Voltage, Breakdown, Collector to Emitter  40 V  
  Voltage, Collector to Base  40 V  
  Voltage, Collector to Emitter  40 V  
  Voltage, Collector to Emitter, Saturation  0.4 V  
  Voltage, Emitter to Base  5 V  
关键词         

2N3906G相关搜索

Brand/Series 2N Bipolar Series  ON Semiconductor Brand/Series 2N Bipolar Series  Bipolar Transistors Brand/Series 2N Bipolar Series  ON Semiconductor Bipolar Transistors Brand/Series 2N Bipolar Series   Current, Collector 200 mA  ON Semiconductor Current, Collector 200 mA  Bipolar Transistors Current, Collector 200 mA  ON Semiconductor Bipolar Transistors Current, Collector 200 mA   Current, Gain 30  ON Semiconductor Current, Gain 30  Bipolar Transistors Current, Gain 30  ON Semiconductor Bipolar Transistors Current, Gain 30   Frequency 250 MHz  ON Semiconductor Frequency 250 MHz  Bipolar Transistors Frequency 250 MHz  ON Semiconductor Bipolar Transistors Frequency 250 MHz   Package Type TO-92  ON Semiconductor Package Type TO-92  Bipolar Transistors Package Type TO-92  ON Semiconductor Bipolar Transistors Package Type TO-92   Polarity PNP  ON Semiconductor Polarity PNP  Bipolar Transistors Polarity PNP  ON Semiconductor Bipolar Transistors Polarity PNP   Power Dissipation 1.5 W  ON Semiconductor Power Dissipation 1.5 W  Bipolar Transistors Power Dissipation 1.5 W  ON Semiconductor Bipolar Transistors Power Dissipation 1.5 W   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 83.3 °C/W  ON Semiconductor Resistance, Thermal, Junction to Case 83.3 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 83.3 °C/W  ON Semiconductor Bipolar Transistors Resistance, Thermal, Junction to Case 83.3 °C/W   Type General Purpose  ON Semiconductor Type General Purpose  Bipolar Transistors Type General Purpose  ON Semiconductor Bipolar Transistors Type General Purpose   Voltage, Breakdown, Collector to Emitter 40 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter 40 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 40 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter 40 V   Voltage, Collector to Base 40 V  ON Semiconductor Voltage, Collector to Base 40 V  Bipolar Transistors Voltage, Collector to Base 40 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Base 40 V   Voltage, Collector to Emitter 40 V  ON Semiconductor Voltage, Collector to Emitter 40 V  Bipolar Transistors Voltage, Collector to Emitter 40 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 40 V   Voltage, Collector to Emitter, Saturation 0.4 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 0.4 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.4 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.4 V   Voltage, Emitter to Base 5 V  ON Semiconductor Voltage, Emitter to Base 5 V  Bipolar Transistors Voltage, Emitter to Base 5 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 5 V  
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