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2N7002LT1G - 

MOSFET; N-Ch; VDSS 60VDC; RDS(ON) 7.5 Ohms; ID +/-115mA; SOT-23 (TO-236); PD 225mW; -55

ON Semiconductor 2N7002LT1G
声明：图片仅供参考，请以实物为准！
制造商产品编号：
2N7002LT1G
仓库库存编号：
70099479
技术数据表：
View 2N7002LT1G Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

2N7002LT1G产品概述

N-Channel Power MOSFET, 60V, ON Semiconductor

2N7002LT1G产品信息

  Brand/Series  MOSFET Series  
  Capacitance, Input  Maximum of 50 pF @ 25 V  
  Channel Mode  Enhancement  
  Channel Type  N  
  Configuration  Single  
  Current, Drain  ±115 mA  
  Dimensions  3.04 x 1.4 x 1.01 mm  
  Height  0.04" (1.01mm)  
  Length  0.119" (3.04mm)  
  Mounting Type  Surface Mount  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  SOT-23  
  Polarization  N-Channel  
  Power Dissipation  225 mW  
  Resistance, Drain to Source On  13.5 Ω  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -55 °C  
  Temperature, Operating, Range  -55 to +150 °C  
  Time, Turn-Off Delay  Maximum of 40 ns  
  Time, Turn-On Delay  Maximum of 20 ns  
  Transconductance, Forward  80 mS  
  Voltage, Breakdown, Drain to Source  60 V  
  Voltage, Drain to Source  60 V  
  Voltage, Forward, Diode  -1.5 V  
  Voltage, Gate to Source  ±20 V  
  Width  0.055" (1.4mm)  
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Brand/Series MOSFET Series  ON Semiconductor Brand/Series MOSFET Series  MOSFET Transistors Brand/Series MOSFET Series  ON Semiconductor MOSFET Transistors Brand/Series MOSFET Series   Capacitance, Input Maximum of 50 pF @ 25 V  ON Semiconductor Capacitance, Input Maximum of 50 pF @ 25 V  MOSFET Transistors Capacitance, Input Maximum of 50 pF @ 25 V  ON Semiconductor MOSFET Transistors Capacitance, Input Maximum of 50 pF @ 25 V   Channel Mode Enhancement  ON Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  ON Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  ON Semiconductor Channel Type N  MOSFET Transistors Channel Type N  ON Semiconductor MOSFET Transistors Channel Type N   Configuration Single  ON Semiconductor Configuration Single  MOSFET Transistors Configuration Single  ON Semiconductor MOSFET Transistors Configuration Single   Current, Drain ±115 mA  ON Semiconductor Current, Drain ±115 mA  MOSFET Transistors Current, Drain ±115 mA  ON Semiconductor MOSFET Transistors Current, Drain ±115 mA   Dimensions 3.04 x 1.4 x 1.01 mm  ON Semiconductor Dimensions 3.04 x 1.4 x 1.01 mm  MOSFET Transistors Dimensions 3.04 x 1.4 x 1.01 mm  ON Semiconductor MOSFET Transistors Dimensions 3.04 x 1.4 x 1.01 mm   Height 0.04" (1.01mm)  ON Semiconductor Height 0.04" (1.01mm)  MOSFET Transistors Height 0.04" (1.01mm)  ON Semiconductor MOSFET Transistors Height 0.04" (1.01mm)   Length 0.119" (3.04mm)  ON Semiconductor Length 0.119" (3.04mm)  MOSFET Transistors Length 0.119" (3.04mm)  ON Semiconductor MOSFET Transistors Length 0.119" (3.04mm)   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  ON Semiconductor MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  ON Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  ON Semiconductor MOSFET Transistors Number of Pins 3   Package Type SOT-23  ON Semiconductor Package Type SOT-23  MOSFET Transistors Package Type SOT-23  ON Semiconductor MOSFET Transistors Package Type SOT-23   Polarization N-Channel  ON Semiconductor Polarization N-Channel  MOSFET Transistors Polarization N-Channel  ON Semiconductor MOSFET Transistors Polarization N-Channel   Power Dissipation 225 mW  ON Semiconductor Power Dissipation 225 mW  MOSFET Transistors Power Dissipation 225 mW  ON Semiconductor MOSFET Transistors Power Dissipation 225 mW   Resistance, Drain to Source On 13.5 Ω  ON Semiconductor Resistance, Drain to Source On 13.5 Ω  MOSFET Transistors Resistance, Drain to Source On 13.5 Ω  ON Semiconductor MOSFET Transistors Resistance, Drain to Source On 13.5 Ω   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay Maximum of 40 ns  ON Semiconductor Time, Turn-Off Delay Maximum of 40 ns  MOSFET Transistors Time, Turn-Off Delay Maximum of 40 ns  ON Semiconductor MOSFET Transistors Time, Turn-Off Delay Maximum of 40 ns   Time, Turn-On Delay Maximum of 20 ns  ON Semiconductor Time, Turn-On Delay Maximum of 20 ns  MOSFET Transistors Time, Turn-On Delay Maximum of 20 ns  ON Semiconductor MOSFET Transistors Time, Turn-On Delay Maximum of 20 ns   Transconductance, Forward 80 mS  ON Semiconductor Transconductance, Forward 80 mS  MOSFET Transistors Transconductance, Forward 80 mS  ON Semiconductor MOSFET Transistors Transconductance, Forward 80 mS   Voltage, Breakdown, Drain to Source 60 V  ON Semiconductor Voltage, Breakdown, Drain to Source 60 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V  ON Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V   Voltage, Drain to Source 60 V  ON Semiconductor Voltage, Drain to Source 60 V  MOSFET Transistors Voltage, Drain to Source 60 V  ON Semiconductor MOSFET Transistors Voltage, Drain to Source 60 V   Voltage, Forward, Diode -1.5 V  ON Semiconductor Voltage, Forward, Diode -1.5 V  MOSFET Transistors Voltage, Forward, Diode -1.5 V  ON Semiconductor MOSFET Transistors Voltage, Forward, Diode -1.5 V   Voltage, Gate to Source ±20 V  ON Semiconductor Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  ON Semiconductor MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.055" (1.4mm)  ON Semiconductor Width 0.055" (1.4mm)  MOSFET Transistors Width 0.055" (1.4mm)  ON Semiconductor MOSFET Transistors Width 0.055" (1.4mm)  
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