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Dual NPN/PNP Transistors, ON Semiconductor
Dual transistor packages each containing an NPN and a PNP device

Brand/Series	BC Series
Configuration	Common Base
Current, Collector	100 mA
Current, Gain	200
Dimensions	2.20 x 1.35 x 1.00 mm
Height	0.039" (1mm)
Length	0.086" (2.2mm)
Material	Si
Mounting Type	Surface Mount
Number of Elements per Chip	1
Number of Pins	4
Package Type	SOT-363
Power Dissipation	380 W
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Transistor Type	NPN
Voltage, Collector to Base	80 V
Voltage, Collector to Emitter	65 V
Voltage, Collector to Emitter, Saturation	0.6 V
Voltage, Emitter to Base	6 V
Voltage, Saturation, Base to Emitter	0.9 V
Width	0.053" (1.35mm)
关键词

Brand/Series BC Series  ON Semiconductor Brand/Series BC Series  Bipolar Transistors Brand/Series BC Series  ON Semiconductor Bipolar Transistors Brand/Series BC Series   Configuration Common Base  ON Semiconductor Configuration Common Base  Bipolar Transistors Configuration Common Base  ON Semiconductor Bipolar Transistors Configuration Common Base   Current, Collector 100 mA  ON Semiconductor Current, Collector 100 mA  Bipolar Transistors Current, Collector 100 mA  ON Semiconductor Bipolar Transistors Current, Collector 100 mA   Current, Gain 200  ON Semiconductor Current, Gain 200  Bipolar Transistors Current, Gain 200  ON Semiconductor Bipolar Transistors Current, Gain 200   Dimensions 2.20 x 1.35 x 1.00 mm  ON Semiconductor Dimensions 2.20 x 1.35 x 1.00 mm  Bipolar Transistors Dimensions 2.20 x 1.35 x 1.00 mm  ON Semiconductor Bipolar Transistors Dimensions 2.20 x 1.35 x 1.00 mm   Height 0.039" (1mm)  ON Semiconductor Height 0.039" (1mm)  Bipolar Transistors Height 0.039" (1mm)  ON Semiconductor Bipolar Transistors Height 0.039" (1mm)   Length 0.086" (2.2mm)  ON Semiconductor Length 0.086" (2.2mm)  Bipolar Transistors Length 0.086" (2.2mm)  ON Semiconductor Bipolar Transistors Length 0.086" (2.2mm)   Material Si  ON Semiconductor Material Si  Bipolar Transistors Material Si  ON Semiconductor Bipolar Transistors Material Si   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  Bipolar Transistors Mounting Type Surface Mount  ON Semiconductor Bipolar Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  ON Semiconductor Bipolar Transistors Number of Elements per Chip 1   Number of Pins 4  ON Semiconductor Number of Pins 4  Bipolar Transistors Number of Pins 4  ON Semiconductor Bipolar Transistors Number of Pins 4   Package Type SOT-363  ON Semiconductor Package Type SOT-363  Bipolar Transistors Package Type SOT-363  ON Semiconductor Bipolar Transistors Package Type SOT-363   Power Dissipation 380 W  ON Semiconductor Power Dissipation 380 W  Bipolar Transistors Power Dissipation 380 W  ON Semiconductor Bipolar Transistors Power Dissipation 380 W   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  Bipolar Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  Bipolar Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Range -55 to +150 °C   Transistor Type NPN  ON Semiconductor Transistor Type NPN  Bipolar Transistors Transistor Type NPN  ON Semiconductor Bipolar Transistors Transistor Type NPN   Voltage, Collector to Base 80 V  ON Semiconductor Voltage, Collector to Base 80 V  Bipolar Transistors Voltage, Collector to Base 80 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Base 80 V   Voltage, Collector to Emitter 65 V  ON Semiconductor Voltage, Collector to Emitter 65 V  Bipolar Transistors Voltage, Collector to Emitter 65 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 65 V   Voltage, Collector to Emitter, Saturation 0.6 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 0.6 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.6 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation 0.6 V   Voltage, Emitter to Base 6 V  ON Semiconductor Voltage, Emitter to Base 6 V  Bipolar Transistors Voltage, Emitter to Base 6 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 6 V   Voltage, Saturation, Base to Emitter 0.9 V  ON Semiconductor Voltage, Saturation, Base to Emitter 0.9 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 0.9 V  ON Semiconductor Bipolar Transistors Voltage, Saturation, Base to Emitter 0.9 V   Width 0.053" (1.35mm)  ON Semiconductor Width 0.053" (1.35mm)  Bipolar Transistors Width 0.053" (1.35mm)  ON Semiconductor Bipolar Transistors Width 0.053" (1.35mm)