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MJE13007G - 

ON Semi MJE13007G NPN High Voltage Bipolar Transistor, 8 A, 400V, 4-Pin TO-220AB

ON Semiconductor MJE13007G
声明：图片仅供参考，请以实物为准！
制造商产品编号：
MJE13007G
仓库库存编号：
70100006
技术数据表：
View MJE13007G Datasheet Datasheet
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由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

MJE13007G产品信息

  Brand/Series  SWITCHMODE Series  
  Configuration  Common Base  
  Current, Collector  8 A  
  Current, Gain  5  
  Dimensions  10.28 x 4.82 x 15.75 mm  
  Frequency, Operating  140 MHz  
  Height  0.62" (15.75mm)  
  Length  0.404" (10.28mm)  
  Material  Si  
  Mounting Type  Through Hole  
  Number of Elements per Chip  1  
  Number of Pins  3  
  Package Type  TO-220AB  
  Polarity  NPN  
  Power Dissipation  80 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  1.56 °C/W  
  Temperature, Operating, Maximum  +150 °C  
  Temperature, Operating, Minimum  -65 °C  
  Temperature, Operating, Range  -65 to +150 °C  
  Transistor Type  NPN  
  Type  Power  
  Voltage, Breakdown, Collector to Emitter  400 V  
  Voltage, Collector to Emitter  400 V  
  Voltage, Collector to Emitter, Saturation  3 V  
  Voltage, Emitter to Base  9 V  
  Voltage, Saturation, Base to Emitter  1.6 V  
  Width  0.19" (4.82mm)  
关键词         

MJE13007G相关搜索

Brand/Series SWITCHMODE Series  ON Semiconductor Brand/Series SWITCHMODE Series  Bipolar Transistors Brand/Series SWITCHMODE Series  ON Semiconductor Bipolar Transistors Brand/Series SWITCHMODE Series   Configuration Common Base  ON Semiconductor Configuration Common Base  Bipolar Transistors Configuration Common Base  ON Semiconductor Bipolar Transistors Configuration Common Base   Current, Collector 8 A  ON Semiconductor Current, Collector 8 A  Bipolar Transistors Current, Collector 8 A  ON Semiconductor Bipolar Transistors Current, Collector 8 A   Current, Gain 5  ON Semiconductor Current, Gain 5  Bipolar Transistors Current, Gain 5  ON Semiconductor Bipolar Transistors Current, Gain 5   Dimensions 10.28 x 4.82 x 15.75 mm  ON Semiconductor Dimensions 10.28 x 4.82 x 15.75 mm  Bipolar Transistors Dimensions 10.28 x 4.82 x 15.75 mm  ON Semiconductor Bipolar Transistors Dimensions 10.28 x 4.82 x 15.75 mm   Frequency, Operating 140 MHz  ON Semiconductor Frequency, Operating 140 MHz  Bipolar Transistors Frequency, Operating 140 MHz  ON Semiconductor Bipolar Transistors Frequency, Operating 140 MHz   Height 0.62" (15.75mm)  ON Semiconductor Height 0.62" (15.75mm)  Bipolar Transistors Height 0.62" (15.75mm)  ON Semiconductor Bipolar Transistors Height 0.62" (15.75mm)   Length 0.404" (10.28mm)  ON Semiconductor Length 0.404" (10.28mm)  Bipolar Transistors Length 0.404" (10.28mm)  ON Semiconductor Bipolar Transistors Length 0.404" (10.28mm)   Material Si  ON Semiconductor Material Si  Bipolar Transistors Material Si  ON Semiconductor Bipolar Transistors Material Si   Mounting Type Through Hole  ON Semiconductor Mounting Type Through Hole  Bipolar Transistors Mounting Type Through Hole  ON Semiconductor Bipolar Transistors Mounting Type Through Hole   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  Bipolar Transistors Number of Elements per Chip 1  ON Semiconductor Bipolar Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  Bipolar Transistors Number of Pins 3  ON Semiconductor Bipolar Transistors Number of Pins 3   Package Type TO-220AB  ON Semiconductor Package Type TO-220AB  Bipolar Transistors Package Type TO-220AB  ON Semiconductor Bipolar Transistors Package Type TO-220AB   Polarity NPN  ON Semiconductor Polarity NPN  Bipolar Transistors Polarity NPN  ON Semiconductor Bipolar Transistors Polarity NPN   Power Dissipation 80 W  ON Semiconductor Power Dissipation 80 W  Bipolar Transistors Power Dissipation 80 W  ON Semiconductor Bipolar Transistors Power Dissipation 80 W   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 1.56 °C/W  ON Semiconductor Resistance, Thermal, Junction to Case 1.56 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 1.56 °C/W  ON Semiconductor Bipolar Transistors Resistance, Thermal, Junction to Case 1.56 °C/W   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  Bipolar Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -65 °C  ON Semiconductor Temperature, Operating, Minimum -65 °C  Bipolar Transistors Temperature, Operating, Minimum -65 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Minimum -65 °C   Temperature, Operating, Range -65 to +150 °C  ON Semiconductor Temperature, Operating, Range -65 to +150 °C  Bipolar Transistors Temperature, Operating, Range -65 to +150 °C  ON Semiconductor Bipolar Transistors Temperature, Operating, Range -65 to +150 °C   Transistor Type NPN  ON Semiconductor Transistor Type NPN  Bipolar Transistors Transistor Type NPN  ON Semiconductor Bipolar Transistors Transistor Type NPN   Type Power  ON Semiconductor Type Power  Bipolar Transistors Type Power  ON Semiconductor Bipolar Transistors Type Power   Voltage, Breakdown, Collector to Emitter 400 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter 400 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 400 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter 400 V   Voltage, Collector to Emitter 400 V  ON Semiconductor Voltage, Collector to Emitter 400 V  Bipolar Transistors Voltage, Collector to Emitter 400 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 400 V   Voltage, Collector to Emitter, Saturation 3 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 3 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 3 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation 3 V   Voltage, Emitter to Base 9 V  ON Semiconductor Voltage, Emitter to Base 9 V  Bipolar Transistors Voltage, Emitter to Base 9 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 9 V   Voltage, Saturation, Base to Emitter 1.6 V  ON Semiconductor Voltage, Saturation, Base to Emitter 1.6 V  Bipolar Transistors Voltage, Saturation, Base to Emitter 1.6 V  ON Semiconductor Bipolar Transistors Voltage, Saturation, Base to Emitter 1.6 V   Width 0.19" (4.82mm)  ON Semiconductor Width 0.19" (4.82mm)  Bipolar Transistors Width 0.19" (4.82mm)  ON Semiconductor Bipolar Transistors Width 0.19" (4.82mm)  
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