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MJE5850G - 

TRANSISTOR; PNP; 300 V; 350 V; 6 V; 8 A; 4; 80 W; 1.25 DEGC/W; 0.5 MA (MAX.); 5

ON Semiconductor MJE5850G
声明：图片仅供参考，请以实物为准！
制造商产品编号：
MJE5850G
仓库库存编号：
70100162
技术数据表：
View MJE5850G Datasheet Datasheet
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由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

MJE5850G产品信息

  Brand/Series  Transistor Series  
  Current, Collector  8 A  
  Current, Gain  5  
  Package Type  TO-220AB  
  Polarity  PNP  
  Power Dissipation  80 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  1.25 °C/W  
  Type  Power  
  Voltage, Breakdown, Collector to Emitter  300 V  
  Voltage, Collector to Emitter  300 V  
  Voltage, Collector to Emitter, Saturation  5 V  
  Voltage, Emitter to Base  6 V  
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MJE5850G相关搜索

Brand/Series Transistor Series  ON Semiconductor Brand/Series Transistor Series  Bipolar Transistors Brand/Series Transistor Series  ON Semiconductor Bipolar Transistors Brand/Series Transistor Series   Current, Collector 8 A  ON Semiconductor Current, Collector 8 A  Bipolar Transistors Current, Collector 8 A  ON Semiconductor Bipolar Transistors Current, Collector 8 A   Current, Gain 5  ON Semiconductor Current, Gain 5  Bipolar Transistors Current, Gain 5  ON Semiconductor Bipolar Transistors Current, Gain 5   Package Type TO-220AB  ON Semiconductor Package Type TO-220AB  Bipolar Transistors Package Type TO-220AB  ON Semiconductor Bipolar Transistors Package Type TO-220AB   Polarity PNP  ON Semiconductor Polarity PNP  Bipolar Transistors Polarity PNP  ON Semiconductor Bipolar Transistors Polarity PNP   Power Dissipation 80 W  ON Semiconductor Power Dissipation 80 W  Bipolar Transistors Power Dissipation 80 W  ON Semiconductor Bipolar Transistors Power Dissipation 80 W   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 1.25 °C/W  ON Semiconductor Resistance, Thermal, Junction to Case 1.25 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 1.25 °C/W  ON Semiconductor Bipolar Transistors Resistance, Thermal, Junction to Case 1.25 °C/W   Type Power  ON Semiconductor Type Power  Bipolar Transistors Type Power  ON Semiconductor Bipolar Transistors Type Power   Voltage, Breakdown, Collector to Emitter 300 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter 300 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter 300 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter 300 V   Voltage, Collector to Emitter 300 V  ON Semiconductor Voltage, Collector to Emitter 300 V  Bipolar Transistors Voltage, Collector to Emitter 300 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter 300 V   Voltage, Collector to Emitter, Saturation 5 V  ON Semiconductor Voltage, Collector to Emitter, Saturation 5 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation 5 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation 5 V   Voltage, Emitter to Base 6 V  ON Semiconductor Voltage, Emitter to Base 6 V  Bipolar Transistors Voltage, Emitter to Base 6 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base 6 V  
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