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MPS2907AG - 

ON Semi MPS2907AG PNP Bipolar Transistor, 0.6 A, 60 V, 3-Pin TO-92

ON Semiconductor MPS2907AG
声明：图片仅供参考，请以实物为准！
制造商产品编号：
MPS2907AG
仓库库存编号：
70099682
技术数据表：
View MPS2907AG Datasheet Datasheet
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由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

MPS2907AG产品信息

  Current, Collector  -600 mA  
  Current, Gain  50  
  Frequency  200 MHz  
  Package Type  TO-92  
  Polarity  PNP  
  Power Dissipation  1.5 W  
  Primary Type  Si  
  Resistance, Thermal, Junction to Case  83.3 °C/W  
  Type  General Purpose  
  Voltage, Breakdown, Collector to Emitter  -60 V  
  Voltage, Collector to Base  -60 V  
  Voltage, Collector to Emitter  -60 V  
  Voltage, Collector to Emitter, Saturation  -1.6 V  
  Voltage, Emitter to Base  -5 V  
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Current, Collector -600 mA  ON Semiconductor Current, Collector -600 mA  Bipolar Transistors Current, Collector -600 mA  ON Semiconductor Bipolar Transistors Current, Collector -600 mA   Current, Gain 50  ON Semiconductor Current, Gain 50  Bipolar Transistors Current, Gain 50  ON Semiconductor Bipolar Transistors Current, Gain 50   Frequency 200 MHz  ON Semiconductor Frequency 200 MHz  Bipolar Transistors Frequency 200 MHz  ON Semiconductor Bipolar Transistors Frequency 200 MHz   Package Type TO-92  ON Semiconductor Package Type TO-92  Bipolar Transistors Package Type TO-92  ON Semiconductor Bipolar Transistors Package Type TO-92   Polarity PNP  ON Semiconductor Polarity PNP  Bipolar Transistors Polarity PNP  ON Semiconductor Bipolar Transistors Polarity PNP   Power Dissipation 1.5 W  ON Semiconductor Power Dissipation 1.5 W  Bipolar Transistors Power Dissipation 1.5 W  ON Semiconductor Bipolar Transistors Power Dissipation 1.5 W   Primary Type Si  ON Semiconductor Primary Type Si  Bipolar Transistors Primary Type Si  ON Semiconductor Bipolar Transistors Primary Type Si   Resistance, Thermal, Junction to Case 83.3 °C/W  ON Semiconductor Resistance, Thermal, Junction to Case 83.3 °C/W  Bipolar Transistors Resistance, Thermal, Junction to Case 83.3 °C/W  ON Semiconductor Bipolar Transistors Resistance, Thermal, Junction to Case 83.3 °C/W   Type General Purpose  ON Semiconductor Type General Purpose  Bipolar Transistors Type General Purpose  ON Semiconductor Bipolar Transistors Type General Purpose   Voltage, Breakdown, Collector to Emitter -60 V  ON Semiconductor Voltage, Breakdown, Collector to Emitter -60 V  Bipolar Transistors Voltage, Breakdown, Collector to Emitter -60 V  ON Semiconductor Bipolar Transistors Voltage, Breakdown, Collector to Emitter -60 V   Voltage, Collector to Base -60 V  ON Semiconductor Voltage, Collector to Base -60 V  Bipolar Transistors Voltage, Collector to Base -60 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Base -60 V   Voltage, Collector to Emitter -60 V  ON Semiconductor Voltage, Collector to Emitter -60 V  Bipolar Transistors Voltage, Collector to Emitter -60 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter -60 V   Voltage, Collector to Emitter, Saturation -1.6 V  ON Semiconductor Voltage, Collector to Emitter, Saturation -1.6 V  Bipolar Transistors Voltage, Collector to Emitter, Saturation -1.6 V  ON Semiconductor Bipolar Transistors Voltage, Collector to Emitter, Saturation -1.6 V   Voltage, Emitter to Base -5 V  ON Semiconductor Voltage, Emitter to Base -5 V  Bipolar Transistors Voltage, Emitter to Base -5 V  ON Semiconductor Bipolar Transistors Voltage, Emitter to Base -5 V  
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