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Power MOSFET, TO-247 Package Type, NChannel,150°C (Max.)

Avalanche Energy Specified

Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

Diode is Characterized for Use in Bridge Circuits

IDSS and VDS (on) Specified at Elevated Temperature

Isolated Mounting Hole

Brand/Series	Triac Series
Capacitance, Input	3600 pF @ 25 V
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
Current, Drain	32 A
Current, Gate Trigger	50 mA (Max.)
Dimensions	16.26 x 5.30 x 21.08 mm
Fall Time	91 ns
Height	0.83" (21.08mm)
Length	0.64" (16.26mm)
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	3
Package Type	TO-247
Power Dissipation	180 W
Resistance, Drain to Source On	0.075 Ω
Resistance, Thermal, Junction to Case	0.7 °C⁄W
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Thermal Resistance, Junction to Ambient	40 °C⁄W
Time, Turn-Off Delay	75 ns
Time, Turn-On Delay	25 ns
Transconductance, Forward	12 S
Typical Gate Charge @ Vgs	85 nC @ 10 V dc
Voltage, Drain to Source	200 V
Voltage, Forward, Diode	2 V
Voltage, Gate to Source	±20 V
Voltage, Reverse, Peak, Maximum	600 V
Width	0.209" (5.3mm)
关键词

Brand/Series Triac Series  ON Semiconductor Brand/Series Triac Series  MOSFET Transistors Brand/Series Triac Series  ON Semiconductor MOSFET Transistors Brand/Series Triac Series   Capacitance, Input 3600 pF @ 25 V  ON Semiconductor Capacitance, Input 3600 pF @ 25 V  MOSFET Transistors Capacitance, Input 3600 pF @ 25 V  ON Semiconductor MOSFET Transistors Capacitance, Input 3600 pF @ 25 V   Channel Mode Enhancement  ON Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  ON Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  ON Semiconductor Channel Type N  MOSFET Transistors Channel Type N  ON Semiconductor MOSFET Transistors Channel Type N   Configuration Single  ON Semiconductor Configuration Single  MOSFET Transistors Configuration Single  ON Semiconductor MOSFET Transistors Configuration Single   Current, Drain 32 A  ON Semiconductor Current, Drain 32 A  MOSFET Transistors Current, Drain 32 A  ON Semiconductor MOSFET Transistors Current, Drain 32 A   Current, Gate Trigger 50 mA (Max.)  ON Semiconductor Current, Gate Trigger 50 mA (Max.)  MOSFET Transistors Current, Gate Trigger 50 mA (Max.)  ON Semiconductor MOSFET Transistors Current, Gate Trigger 50 mA (Max.)   Dimensions 16.26 x 5.30 x 21.08 mm  ON Semiconductor Dimensions 16.26 x 5.30 x 21.08 mm  MOSFET Transistors Dimensions 16.26 x 5.30 x 21.08 mm  ON Semiconductor MOSFET Transistors Dimensions 16.26 x 5.30 x 21.08 mm   Fall Time 91 ns  ON Semiconductor Fall Time 91 ns  MOSFET Transistors Fall Time 91 ns  ON Semiconductor MOSFET Transistors Fall Time 91 ns   Height 0.83" (21.08mm)  ON Semiconductor Height 0.83" (21.08mm)  MOSFET Transistors Height 0.83" (21.08mm)  ON Semiconductor MOSFET Transistors Height 0.83" (21.08mm)   Length 0.64" (16.26mm)  ON Semiconductor Length 0.64" (16.26mm)  MOSFET Transistors Length 0.64" (16.26mm)  ON Semiconductor MOSFET Transistors Length 0.64" (16.26mm)   Mounting Type Through Hole  ON Semiconductor Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  ON Semiconductor MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  ON Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  ON Semiconductor MOSFET Transistors Number of Pins 3   Package Type TO-247  ON Semiconductor Package Type TO-247  MOSFET Transistors Package Type TO-247  ON Semiconductor MOSFET Transistors Package Type TO-247   Power Dissipation 180 W  ON Semiconductor Power Dissipation 180 W  MOSFET Transistors Power Dissipation 180 W  ON Semiconductor MOSFET Transistors Power Dissipation 180 W   Resistance, Drain to Source On 0.075 Ω  ON Semiconductor Resistance, Drain to Source On 0.075 Ω  MOSFET Transistors Resistance, Drain to Source On 0.075 Ω  ON Semiconductor MOSFET Transistors Resistance, Drain to Source On 0.075 Ω   Resistance, Thermal, Junction to Case 0.7 °C⁄W  ON Semiconductor Resistance, Thermal, Junction to Case 0.7 °C⁄W  MOSFET Transistors Resistance, Thermal, Junction to Case 0.7 °C⁄W  ON Semiconductor MOSFET Transistors Resistance, Thermal, Junction to Case 0.7 °C⁄W   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 40 °C⁄W  ON Semiconductor Thermal Resistance, Junction to Ambient 40 °C⁄W  MOSFET Transistors Thermal Resistance, Junction to Ambient 40 °C⁄W  ON Semiconductor MOSFET Transistors Thermal Resistance, Junction to Ambient 40 °C⁄W   Time, Turn-Off Delay 75 ns  ON Semiconductor Time, Turn-Off Delay 75 ns  MOSFET Transistors Time, Turn-Off Delay 75 ns  ON Semiconductor MOSFET Transistors Time, Turn-Off Delay 75 ns   Time, Turn-On Delay 25 ns  ON Semiconductor Time, Turn-On Delay 25 ns  MOSFET Transistors Time, Turn-On Delay 25 ns  ON Semiconductor MOSFET Transistors Time, Turn-On Delay 25 ns   Transconductance, Forward 12 S  ON Semiconductor Transconductance, Forward 12 S  MOSFET Transistors Transconductance, Forward 12 S  ON Semiconductor MOSFET Transistors Transconductance, Forward 12 S   Typical Gate Charge @ Vgs 85 nC @ 10 V dc  ON Semiconductor Typical Gate Charge @ Vgs 85 nC @ 10 V dc  MOSFET Transistors Typical Gate Charge @ Vgs 85 nC @ 10 V dc  ON Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 85 nC @ 10 V dc   Voltage, Drain to Source 200 V  ON Semiconductor Voltage, Drain to Source 200 V  MOSFET Transistors Voltage, Drain to Source 200 V  ON Semiconductor MOSFET Transistors Voltage, Drain to Source 200 V   Voltage, Forward, Diode 2 V  ON Semiconductor Voltage, Forward, Diode 2 V  MOSFET Transistors Voltage, Forward, Diode 2 V  ON Semiconductor MOSFET Transistors Voltage, Forward, Diode 2 V   Voltage, Gate to Source ±20 V  ON Semiconductor Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  ON Semiconductor MOSFET Transistors Voltage, Gate to Source ±20 V   Voltage, Reverse, Peak, Maximum 600 V  ON Semiconductor Voltage, Reverse, Peak, Maximum 600 V  MOSFET Transistors Voltage, Reverse, Peak, Maximum 600 V  ON Semiconductor MOSFET Transistors Voltage, Reverse, Peak, Maximum 600 V   Width 0.209" (5.3mm)  ON Semiconductor Width 0.209" (5.3mm)  MOSFET Transistors Width 0.209" (5.3mm)  ON Semiconductor MOSFET Transistors Width 0.209" (5.3mm)