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Brand/Series	NT MOSFET Series
Channel Mode	Enhancement
Channel Type	P
Configuration	Single
Current, Drain	-760 mA
Gate Charge, Total	2.1 nC
Length	0.066" (1.68mm)
Mounting Type	Surface Mount
Number of Elements per Chip	1
Number of Pins	3
Package Type	SC-89
Polarization	P-Channel
Power Dissipation	313 mW
Resistance, Drain to Source On	0.26 Ω
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Time, Turn-Off Delay	29 ns
Time, Turn-On Delay	8 ns
Transconductance, Forward	0.4
Voltage, Breakdown, Drain to Source	-20 V
Voltage, Drain to Source	-20 V
Voltage, Forward, Diode	-0.72 V
Voltage, Gate to Source	±6 V
关键词

Brand/Series NT MOSFET Series  ON Semiconductor Brand/Series NT MOSFET Series  MOSFET Transistors Brand/Series NT MOSFET Series  ON Semiconductor MOSFET Transistors Brand/Series NT MOSFET Series   Channel Mode Enhancement  ON Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  ON Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type P  ON Semiconductor Channel Type P  MOSFET Transistors Channel Type P  ON Semiconductor MOSFET Transistors Channel Type P   Configuration Single  ON Semiconductor Configuration Single  MOSFET Transistors Configuration Single  ON Semiconductor MOSFET Transistors Configuration Single   Current, Drain -760 mA  ON Semiconductor Current, Drain -760 mA  MOSFET Transistors Current, Drain -760 mA  ON Semiconductor MOSFET Transistors Current, Drain -760 mA   Gate Charge, Total 2.1 nC  ON Semiconductor Gate Charge, Total 2.1 nC  MOSFET Transistors Gate Charge, Total 2.1 nC  ON Semiconductor MOSFET Transistors Gate Charge, Total 2.1 nC   Length 0.066" (1.68mm)  ON Semiconductor Length 0.066" (1.68mm)  MOSFET Transistors Length 0.066" (1.68mm)  ON Semiconductor MOSFET Transistors Length 0.066" (1.68mm)   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  ON Semiconductor MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  ON Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  ON Semiconductor Number of Pins 3  MOSFET Transistors Number of Pins 3  ON Semiconductor MOSFET Transistors Number of Pins 3   Package Type SC-89  ON Semiconductor Package Type SC-89  MOSFET Transistors Package Type SC-89  ON Semiconductor MOSFET Transistors Package Type SC-89   Polarization P-Channel  ON Semiconductor Polarization P-Channel  MOSFET Transistors Polarization P-Channel  ON Semiconductor MOSFET Transistors Polarization P-Channel   Power Dissipation 313 mW  ON Semiconductor Power Dissipation 313 mW  MOSFET Transistors Power Dissipation 313 mW  ON Semiconductor MOSFET Transistors Power Dissipation 313 mW   Resistance, Drain to Source On 0.26 Ω  ON Semiconductor Resistance, Drain to Source On 0.26 Ω  MOSFET Transistors Resistance, Drain to Source On 0.26 Ω  ON Semiconductor MOSFET Transistors Resistance, Drain to Source On 0.26 Ω   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 29 ns  ON Semiconductor Time, Turn-Off Delay 29 ns  MOSFET Transistors Time, Turn-Off Delay 29 ns  ON Semiconductor MOSFET Transistors Time, Turn-Off Delay 29 ns   Time, Turn-On Delay 8 ns  ON Semiconductor Time, Turn-On Delay 8 ns  MOSFET Transistors Time, Turn-On Delay 8 ns  ON Semiconductor MOSFET Transistors Time, Turn-On Delay 8 ns   Transconductance, Forward 0.4  ON Semiconductor Transconductance, Forward 0.4  MOSFET Transistors Transconductance, Forward 0.4  ON Semiconductor MOSFET Transistors Transconductance, Forward 0.4   Voltage, Breakdown, Drain to Source -20 V  ON Semiconductor Voltage, Breakdown, Drain to Source -20 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -20 V  ON Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source -20 V   Voltage, Drain to Source -20 V  ON Semiconductor Voltage, Drain to Source -20 V  MOSFET Transistors Voltage, Drain to Source -20 V  ON Semiconductor MOSFET Transistors Voltage, Drain to Source -20 V   Voltage, Forward, Diode -0.72 V  ON Semiconductor Voltage, Forward, Diode -0.72 V  MOSFET Transistors Voltage, Forward, Diode -0.72 V  ON Semiconductor MOSFET Transistors Voltage, Forward, Diode -0.72 V   Voltage, Gate to Source ±6 V  ON Semiconductor Voltage, Gate to Source ±6 V  MOSFET Transistors Voltage, Gate to Source ±6 V  ON Semiconductor MOSFET Transistors Voltage, Gate to Source ±6 V