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Discrete Semiconductors

Transistors & Modules

MOSFET Transistors

> NTF3055-100T1G

NTF3055-100T1G -

MOSFET, Power; N-Ch; VDSS 68VDC; RDS(ON) 88 Milliohms; ID 3A; SOT-223 (TO-261); -55deg

ON Semiconductor NTF3055-100T1G

声明：图片仅供参考，请以实物为准！

ON Semiconductor

制造商：: ON Semiconductor ON Semiconductor
制造商产品编号：: NTF3055-100T1G
仓库库存编号：: 70100696
技术数据表：: Datasheet

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NTF3055-100T1G相关搜索

Brand/Series NT MOSFET Series ON Semiconductor Brand/Series NT MOSFET Series MOSFET Transistors Brand/Series NT MOSFET Series ON Semiconductor MOSFET Transistors Brand/Series NT MOSFET Series Current, Drain 3 A ON Semiconductor Current, Drain 3 A MOSFET Transistors Current, Drain 3 A ON Semiconductor MOSFET Transistors Current, Drain 3 A Gate Charge, Total 10.6 nC ON Semiconductor Gate Charge, Total 10.6 nC MOSFET Transistors Gate Charge, Total 10.6 nC ON Semiconductor MOSFET Transistors Gate Charge, Total 10.6 nC Package Type SOT-223 (TO-261) ON Semiconductor Package Type SOT-223 (TO-261) MOSFET Transistors Package Type SOT-223 (TO-261) ON Semiconductor MOSFET Transistors Package Type SOT-223 (TO-261) Polarization N-Channel ON Semiconductor Polarization N-Channel MOSFET Transistors Polarization N-Channel ON Semiconductor MOSFET Transistors Polarization N-Channel Power Dissipation 2.1 mW ON Semiconductor Power Dissipation 2.1 mW MOSFET Transistors Power Dissipation 2.1 mW ON Semiconductor MOSFET Transistors Power Dissipation 2.1 mW Resistance, Drain to Source On 88 Milliohms ON Semiconductor Resistance, Drain to Source On 88 Milliohms MOSFET Transistors Resistance, Drain to Source On 88 Milliohms ON Semiconductor MOSFET Transistors Resistance, Drain to Source On 88 Milliohms Temperature, Operating, Maximum +175 °C ON Semiconductor Temperature, Operating, Maximum +175 °C MOSFET Transistors Temperature, Operating, Maximum +175 °C ON Semiconductor MOSFET Transistors Temperature, Operating, Maximum +175 °C Temperature, Operating, Minimum -55 °C ON Semiconductor Temperature, Operating, Minimum -55 °C MOSFET Transistors Temperature, Operating, Minimum -55 °C ON Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C Time, Turn-Off Delay 21 ns ON Semiconductor Time, Turn-Off Delay 21 ns MOSFET Transistors Time, Turn-Off Delay 21 ns ON Semiconductor MOSFET Transistors Time, Turn-Off Delay 21 ns Time, Turn-On Delay 9.4 ns ON Semiconductor Time, Turn-On Delay 9.4 ns MOSFET Transistors Time, Turn-On Delay 9.4 ns ON Semiconductor MOSFET Transistors Time, Turn-On Delay 9.4 ns Transconductance, Forward 3.2 Mhos ON Semiconductor Transconductance, Forward 3.2 Mhos MOSFET Transistors Transconductance, Forward 3.2 Mhos ON Semiconductor MOSFET Transistors Transconductance, Forward 3.2 Mhos Voltage, Breakdown, Drain to Source 68 V ON Semiconductor Voltage, Breakdown, Drain to Source 68 V MOSFET Transistors Voltage, Breakdown, Drain to Source 68 V ON Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 68 V Voltage, Forward, Diode 0.89 V ON Semiconductor Voltage, Forward, Diode 0.89 V MOSFET Transistors Voltage, Forward, Diode 0.89 V ON Semiconductor MOSFET Transistors Voltage, Forward, Diode 0.89 V Voltage, Gate to Source ±20 V ON Semiconductor Voltage, Gate to Source ±20 V MOSFET Transistors Voltage, Gate to Source ±20 V ON Semiconductor MOSFET Transistors Voltage, Gate to Source ±20 V

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