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Brand/Series	NT MOSFET Series
Capacitance, Input	165 pF @ 10 V, 680 pF @ -10 V
Channel Mode	Enhancement
Channel Type	P
Configuration	Dual Gate, Dual Source, Quad Drain
Current, Drain	-2.3, 2.9 A
Dimensions	3.1 x 1.7 x 1 mm
Height	0.039" (1mm)
Length	0.122" (3.1mm)
Mounting Type	Surface Mount
Number of Elements per Chip	1
Number of Pins	8
Package Type	ChipFET
Power Dissipation	1.1 W
Resistance, Drain to Source On	110, 115 mΩ
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Time, Turn-Off Delay	16 ns
Time, Turn-On Delay	6.3 ns
Transconductance, Forward	6, 8 sec
Typical Gate Charge @ Vgs	2.3 nC @ 4.5 V, 7.4 nC @ 4.5 V
Voltage, Drain to Source	20 V
Voltage, Forward, Diode	-1.2, 1.15 V
Voltage, Gate to Source	±12 V
Width	0.067" (1.7mm)
关键词

Brand/Series NT MOSFET Series  ON Semiconductor Brand/Series NT MOSFET Series  MOSFET Transistors Brand/Series NT MOSFET Series  ON Semiconductor MOSFET Transistors Brand/Series NT MOSFET Series   Capacitance, Input 165 pF @ 10 V, 680 pF @ -10 V  ON Semiconductor Capacitance, Input 165 pF @ 10 V, 680 pF @ -10 V  MOSFET Transistors Capacitance, Input 165 pF @ 10 V, 680 pF @ -10 V  ON Semiconductor MOSFET Transistors Capacitance, Input 165 pF @ 10 V, 680 pF @ -10 V   Channel Mode Enhancement  ON Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  ON Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type P  ON Semiconductor Channel Type P  MOSFET Transistors Channel Type P  ON Semiconductor MOSFET Transistors Channel Type P   Configuration Dual Gate, Dual Source, Quad Drain  ON Semiconductor Configuration Dual Gate, Dual Source, Quad Drain  MOSFET Transistors Configuration Dual Gate, Dual Source, Quad Drain  ON Semiconductor MOSFET Transistors Configuration Dual Gate, Dual Source, Quad Drain   Current, Drain -2.3, 2.9 A  ON Semiconductor Current, Drain -2.3, 2.9 A  MOSFET Transistors Current, Drain -2.3, 2.9 A  ON Semiconductor MOSFET Transistors Current, Drain -2.3, 2.9 A   Dimensions 3.1 x 1.7 x 1 mm  ON Semiconductor Dimensions 3.1 x 1.7 x 1 mm  MOSFET Transistors Dimensions 3.1 x 1.7 x 1 mm  ON Semiconductor MOSFET Transistors Dimensions 3.1 x 1.7 x 1 mm   Height 0.039" (1mm)  ON Semiconductor Height 0.039" (1mm)  MOSFET Transistors Height 0.039" (1mm)  ON Semiconductor MOSFET Transistors Height 0.039" (1mm)   Length 0.122" (3.1mm)  ON Semiconductor Length 0.122" (3.1mm)  MOSFET Transistors Length 0.122" (3.1mm)  ON Semiconductor MOSFET Transistors Length 0.122" (3.1mm)   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  ON Semiconductor MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  ON Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 8  ON Semiconductor Number of Pins 8  MOSFET Transistors Number of Pins 8  ON Semiconductor MOSFET Transistors Number of Pins 8   Package Type ChipFET  ON Semiconductor Package Type ChipFET  MOSFET Transistors Package Type ChipFET  ON Semiconductor MOSFET Transistors Package Type ChipFET   Power Dissipation 1.1 W  ON Semiconductor Power Dissipation 1.1 W  MOSFET Transistors Power Dissipation 1.1 W  ON Semiconductor MOSFET Transistors Power Dissipation 1.1 W   Resistance, Drain to Source On 110, 115 mΩ  ON Semiconductor Resistance, Drain to Source On 110, 115 mΩ  MOSFET Transistors Resistance, Drain to Source On 110, 115 mΩ  ON Semiconductor MOSFET Transistors Resistance, Drain to Source On 110, 115 mΩ   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 16 ns  ON Semiconductor Time, Turn-Off Delay 16 ns  MOSFET Transistors Time, Turn-Off Delay 16 ns  ON Semiconductor MOSFET Transistors Time, Turn-Off Delay 16 ns   Time, Turn-On Delay 6.3 ns  ON Semiconductor Time, Turn-On Delay 6.3 ns  MOSFET Transistors Time, Turn-On Delay 6.3 ns  ON Semiconductor MOSFET Transistors Time, Turn-On Delay 6.3 ns   Transconductance, Forward 6, 8 sec  ON Semiconductor Transconductance, Forward 6, 8 sec  MOSFET Transistors Transconductance, Forward 6, 8 sec  ON Semiconductor MOSFET Transistors Transconductance, Forward 6, 8 sec   Typical Gate Charge @ Vgs 2.3 nC @ 4.5 V, 7.4 nC @ 4.5 V  ON Semiconductor Typical Gate Charge @ Vgs 2.3 nC @ 4.5 V, 7.4 nC @ 4.5 V  MOSFET Transistors Typical Gate Charge @ Vgs 2.3 nC @ 4.5 V, 7.4 nC @ 4.5 V  ON Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 2.3 nC @ 4.5 V, 7.4 nC @ 4.5 V   Voltage, Drain to Source 20 V  ON Semiconductor Voltage, Drain to Source 20 V  MOSFET Transistors Voltage, Drain to Source 20 V  ON Semiconductor MOSFET Transistors Voltage, Drain to Source 20 V   Voltage, Forward, Diode -1.2, 1.15 V  ON Semiconductor Voltage, Forward, Diode -1.2, 1.15 V  MOSFET Transistors Voltage, Forward, Diode -1.2, 1.15 V  ON Semiconductor MOSFET Transistors Voltage, Forward, Diode -1.2, 1.15 V   Voltage, Gate to Source ±12 V  ON Semiconductor Voltage, Gate to Source ±12 V  MOSFET Transistors Voltage, Gate to Source ±12 V  ON Semiconductor MOSFET Transistors Voltage, Gate to Source ±12 V   Width 0.067" (1.7mm)  ON Semiconductor Width 0.067" (1.7mm)  MOSFET Transistors Width 0.067" (1.7mm)  ON Semiconductor MOSFET Transistors Width 0.067" (1.7mm)