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Brand/Series	NT MOSFET Series
Capacitance, Input	20 pF @ 5 V
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
Current, Drain	250 mA
Dimensions	2.2 x 1.35 x 1 mm
Gate Charge, Total	0.9 nC
Height	0.039" (1mm)
Length	0.086" (2.2mm)
Mounting Type	Surface Mount
Number of Elements per Chip	2
Number of Pins	6
Package Type	SOT-363
Polarization	Dual N-Channel
Power Dissipation	272 mW
Resistance, Drain to Source On	2.5 Ω
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Time, Turn-Off Delay	94 ns
Time, Turn-On Delay	17 ns
Transconductance, Forward	80 S
Typical Gate Charge @ Vgs	0.9 nC @ 5 V
Voltage, Breakdown, Drain to Source	30 V
Voltage, Drain to Source	30 V
Voltage, Forward, Diode	0.65 V
Voltage, Gate to Source	±20 V
Width	0.053" (1.35mm)
关键词

Brand/Series NT MOSFET Series  ON Semiconductor Brand/Series NT MOSFET Series  MOSFET Transistors Brand/Series NT MOSFET Series  ON Semiconductor MOSFET Transistors Brand/Series NT MOSFET Series   Capacitance, Input 20 pF @ 5 V  ON Semiconductor Capacitance, Input 20 pF @ 5 V  MOSFET Transistors Capacitance, Input 20 pF @ 5 V  ON Semiconductor MOSFET Transistors Capacitance, Input 20 pF @ 5 V   Channel Mode Enhancement  ON Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  ON Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type N  ON Semiconductor Channel Type N  MOSFET Transistors Channel Type N  ON Semiconductor MOSFET Transistors Channel Type N   Configuration Single  ON Semiconductor Configuration Single  MOSFET Transistors Configuration Single  ON Semiconductor MOSFET Transistors Configuration Single   Current, Drain 250 mA  ON Semiconductor Current, Drain 250 mA  MOSFET Transistors Current, Drain 250 mA  ON Semiconductor MOSFET Transistors Current, Drain 250 mA   Dimensions 2.2 x 1.35 x 1 mm  ON Semiconductor Dimensions 2.2 x 1.35 x 1 mm  MOSFET Transistors Dimensions 2.2 x 1.35 x 1 mm  ON Semiconductor MOSFET Transistors Dimensions 2.2 x 1.35 x 1 mm   Gate Charge, Total 0.9 nC  ON Semiconductor Gate Charge, Total 0.9 nC  MOSFET Transistors Gate Charge, Total 0.9 nC  ON Semiconductor MOSFET Transistors Gate Charge, Total 0.9 nC   Height 0.039" (1mm)  ON Semiconductor Height 0.039" (1mm)  MOSFET Transistors Height 0.039" (1mm)  ON Semiconductor MOSFET Transistors Height 0.039" (1mm)   Length 0.086" (2.2mm)  ON Semiconductor Length 0.086" (2.2mm)  MOSFET Transistors Length 0.086" (2.2mm)  ON Semiconductor MOSFET Transistors Length 0.086" (2.2mm)   Mounting Type Surface Mount  ON Semiconductor Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  ON Semiconductor MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 2  ON Semiconductor Number of Elements per Chip 2  MOSFET Transistors Number of Elements per Chip 2  ON Semiconductor MOSFET Transistors Number of Elements per Chip 2   Number of Pins 6  ON Semiconductor Number of Pins 6  MOSFET Transistors Number of Pins 6  ON Semiconductor MOSFET Transistors Number of Pins 6   Package Type SOT-363  ON Semiconductor Package Type SOT-363  MOSFET Transistors Package Type SOT-363  ON Semiconductor MOSFET Transistors Package Type SOT-363   Polarization Dual N-Channel  ON Semiconductor Polarization Dual N-Channel  MOSFET Transistors Polarization Dual N-Channel  ON Semiconductor MOSFET Transistors Polarization Dual N-Channel   Power Dissipation 272 mW  ON Semiconductor Power Dissipation 272 mW  MOSFET Transistors Power Dissipation 272 mW  ON Semiconductor MOSFET Transistors Power Dissipation 272 mW   Resistance, Drain to Source On 2.5 Ω  ON Semiconductor Resistance, Drain to Source On 2.5 Ω  MOSFET Transistors Resistance, Drain to Source On 2.5 Ω  ON Semiconductor MOSFET Transistors Resistance, Drain to Source On 2.5 Ω   Temperature, Operating, Maximum +150 °C  ON Semiconductor Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  ON Semiconductor Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 94 ns  ON Semiconductor Time, Turn-Off Delay 94 ns  MOSFET Transistors Time, Turn-Off Delay 94 ns  ON Semiconductor MOSFET Transistors Time, Turn-Off Delay 94 ns   Time, Turn-On Delay 17 ns  ON Semiconductor Time, Turn-On Delay 17 ns  MOSFET Transistors Time, Turn-On Delay 17 ns  ON Semiconductor MOSFET Transistors Time, Turn-On Delay 17 ns   Transconductance, Forward 80 S  ON Semiconductor Transconductance, Forward 80 S  MOSFET Transistors Transconductance, Forward 80 S  ON Semiconductor MOSFET Transistors Transconductance, Forward 80 S   Typical Gate Charge @ Vgs 0.9 nC @ 5 V  ON Semiconductor Typical Gate Charge @ Vgs 0.9 nC @ 5 V  MOSFET Transistors Typical Gate Charge @ Vgs 0.9 nC @ 5 V  ON Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 0.9 nC @ 5 V   Voltage, Breakdown, Drain to Source 30 V  ON Semiconductor Voltage, Breakdown, Drain to Source 30 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V  ON Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V   Voltage, Drain to Source 30 V  ON Semiconductor Voltage, Drain to Source 30 V  MOSFET Transistors Voltage, Drain to Source 30 V  ON Semiconductor MOSFET Transistors Voltage, Drain to Source 30 V   Voltage, Forward, Diode 0.65 V  ON Semiconductor Voltage, Forward, Diode 0.65 V  MOSFET Transistors Voltage, Forward, Diode 0.65 V  ON Semiconductor MOSFET Transistors Voltage, Forward, Diode 0.65 V   Voltage, Gate to Source ±20 V  ON Semiconductor Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  ON Semiconductor MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.053" (1.35mm)  ON Semiconductor Width 0.053" (1.35mm)  MOSFET Transistors Width 0.053" (1.35mm)  ON Semiconductor MOSFET Transistors Width 0.053" (1.35mm)