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P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

Brand/Series	NT MOSFET Series
Capacitance, Input	507 pF @ -25 V
Channel Mode	Enhancement
Channel Type	P
Configuration	Single
Current, Drain	-1.8 A
Dimensions	10.28 x 4.82 x 15.75 mm
Gate Charge, Total	14 nC
Height	0.62" (15.75mm)
Length	0.404" (10.28mm)
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	3+Tab
Package Type	TO-220
Polarization	P-Channel
Power Dissipation	62.5 W
Resistance, Drain to Source On	196 mΩ
Temperature, Operating, Maximum	+175 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +175 °C
Time, Turn-Off Delay	27 ns
Time, Turn-On Delay	10 ns
Transconductance, Forward	6 S
Typical Gate Charge @ Vgs	14 nC @ -10 V
Voltage, Breakdown, Drain to Source	-60 V
Voltage, Drain to Source	-60 V
Voltage, Forward, Diode	-1.6 V
Voltage, Gate to Source	±20 V
Width	0.19" (4.82mm)
关键词

Brand/Series NT MOSFET Series  ON Semiconductor Brand/Series NT MOSFET Series  MOSFET Transistors Brand/Series NT MOSFET Series  ON Semiconductor MOSFET Transistors Brand/Series NT MOSFET Series   Capacitance, Input 507 pF @ -25 V  ON Semiconductor Capacitance, Input 507 pF @ -25 V  MOSFET Transistors Capacitance, Input 507 pF @ -25 V  ON Semiconductor MOSFET Transistors Capacitance, Input 507 pF @ -25 V   Channel Mode Enhancement  ON Semiconductor Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  ON Semiconductor MOSFET Transistors Channel Mode Enhancement   Channel Type P  ON Semiconductor Channel Type P  MOSFET Transistors Channel Type P  ON Semiconductor MOSFET Transistors Channel Type P   Configuration Single  ON Semiconductor Configuration Single  MOSFET Transistors Configuration Single  ON Semiconductor MOSFET Transistors Configuration Single   Current, Drain -1.8 A  ON Semiconductor Current, Drain -1.8 A  MOSFET Transistors Current, Drain -1.8 A  ON Semiconductor MOSFET Transistors Current, Drain -1.8 A   Dimensions 10.28 x 4.82 x 15.75 mm  ON Semiconductor Dimensions 10.28 x 4.82 x 15.75 mm  MOSFET Transistors Dimensions 10.28 x 4.82 x 15.75 mm  ON Semiconductor MOSFET Transistors Dimensions 10.28 x 4.82 x 15.75 mm   Gate Charge, Total 14 nC  ON Semiconductor Gate Charge, Total 14 nC  MOSFET Transistors Gate Charge, Total 14 nC  ON Semiconductor MOSFET Transistors Gate Charge, Total 14 nC   Height 0.62" (15.75mm)  ON Semiconductor Height 0.62" (15.75mm)  MOSFET Transistors Height 0.62" (15.75mm)  ON Semiconductor MOSFET Transistors Height 0.62" (15.75mm)   Length 0.404" (10.28mm)  ON Semiconductor Length 0.404" (10.28mm)  MOSFET Transistors Length 0.404" (10.28mm)  ON Semiconductor MOSFET Transistors Length 0.404" (10.28mm)   Mounting Type Through Hole  ON Semiconductor Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  ON Semiconductor MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  ON Semiconductor Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  ON Semiconductor MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3+Tab  ON Semiconductor Number of Pins 3+Tab  MOSFET Transistors Number of Pins 3+Tab  ON Semiconductor MOSFET Transistors Number of Pins 3+Tab   Package Type TO-220  ON Semiconductor Package Type TO-220  MOSFET Transistors Package Type TO-220  ON Semiconductor MOSFET Transistors Package Type TO-220   Polarization P-Channel  ON Semiconductor Polarization P-Channel  MOSFET Transistors Polarization P-Channel  ON Semiconductor MOSFET Transistors Polarization P-Channel   Power Dissipation 62.5 W  ON Semiconductor Power Dissipation 62.5 W  MOSFET Transistors Power Dissipation 62.5 W  ON Semiconductor MOSFET Transistors Power Dissipation 62.5 W   Resistance, Drain to Source On 196 mΩ  ON Semiconductor Resistance, Drain to Source On 196 mΩ  MOSFET Transistors Resistance, Drain to Source On 196 mΩ  ON Semiconductor MOSFET Transistors Resistance, Drain to Source On 196 mΩ   Temperature, Operating, Maximum +175 °C  ON Semiconductor Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  ON Semiconductor Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +175 °C  ON Semiconductor Temperature, Operating, Range -55 to +175 °C  MOSFET Transistors Temperature, Operating, Range -55 to +175 °C  ON Semiconductor MOSFET Transistors Temperature, Operating, Range -55 to +175 °C   Time, Turn-Off Delay 27 ns  ON Semiconductor Time, Turn-Off Delay 27 ns  MOSFET Transistors Time, Turn-Off Delay 27 ns  ON Semiconductor MOSFET Transistors Time, Turn-Off Delay 27 ns   Time, Turn-On Delay 10 ns  ON Semiconductor Time, Turn-On Delay 10 ns  MOSFET Transistors Time, Turn-On Delay 10 ns  ON Semiconductor MOSFET Transistors Time, Turn-On Delay 10 ns   Transconductance, Forward 6 S  ON Semiconductor Transconductance, Forward 6 S  MOSFET Transistors Transconductance, Forward 6 S  ON Semiconductor MOSFET Transistors Transconductance, Forward 6 S   Typical Gate Charge @ Vgs 14 nC @ -10 V  ON Semiconductor Typical Gate Charge @ Vgs 14 nC @ -10 V  MOSFET Transistors Typical Gate Charge @ Vgs 14 nC @ -10 V  ON Semiconductor MOSFET Transistors Typical Gate Charge @ Vgs 14 nC @ -10 V   Voltage, Breakdown, Drain to Source -60 V  ON Semiconductor Voltage, Breakdown, Drain to Source -60 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -60 V  ON Semiconductor MOSFET Transistors Voltage, Breakdown, Drain to Source -60 V   Voltage, Drain to Source -60 V  ON Semiconductor Voltage, Drain to Source -60 V  MOSFET Transistors Voltage, Drain to Source -60 V  ON Semiconductor MOSFET Transistors Voltage, Drain to Source -60 V   Voltage, Forward, Diode -1.6 V  ON Semiconductor Voltage, Forward, Diode -1.6 V  MOSFET Transistors Voltage, Forward, Diode -1.6 V  ON Semiconductor MOSFET Transistors Voltage, Forward, Diode -1.6 V   Voltage, Gate to Source ±20 V  ON Semiconductor Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  ON Semiconductor MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.19" (4.82mm)  ON Semiconductor Width 0.19" (4.82mm)  MOSFET Transistors Width 0.19" (4.82mm)  ON Semiconductor MOSFET Transistors Width 0.19" (4.82mm)