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260 mA Collector Current, 200 A Forward Current, 10.8 nF Input Capacitance, Trench IGBT Module

Homogeneous Si

Trench == Trenchgate technology

VCE(sat) with positive temperature coefficient

High short circuit capability, self limiting to 6 x collector current
For electronic welders, AC inverter drives, UPS.

Brand/Series	IGBT Series
Capacitance, Gate	10.8 nF
Capacitance, Input	10.8 nF (Typ.)
Channel Type	N
Configuration	Dual
Current, Collector	260 A
Current, Continuous Collector	260 A
Dimensions	106.4 x 61.4 x 30.5 mm
Energy Rating	18 mJ
Height	1.201" (30.5mm)
Inductance, Collector to Emitter	20 nH (Max.)
Length	4.188" (106.4mm)
Mounting Type	Screw
Number of Pins	7
Package Type	D 56
Polarity	N-Channel
Primary Type	Si
Resistance, Collector to Emitter	4.7 Milliohms (Typ.) @ 15 V, +25°C
Resistance, Thermal	4 Milliohms (Typ.) @ +25°C
Resistance, Thermal, Junction to Case	0.13 K/W
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-40 °C
Temperature, Operating, Range	-40 to +150 °C
Time, Turn-Off	110 ns
Time, Turn-On	40 ns
Transistor Type	IGBT
Type	Trench
Voltage, Collector to Emitter	1200 V
Voltage, Collector to Emitter Shorted	1200 V
Voltage, Gate to Emitter	±20 V
Voltage, Gate to Emitter Threshold	5.8 V (Typ.) @ 6 mA
Width	2.417" (61.4mm)
关键词

Brand/Series IGBT Series  SEMIKRON Brand/Series IGBT Series  IGBT Transistor Modules Brand/Series IGBT Series  SEMIKRON IGBT Transistor Modules Brand/Series IGBT Series   Capacitance, Gate 10.8 nF  SEMIKRON Capacitance, Gate 10.8 nF  IGBT Transistor Modules Capacitance, Gate 10.8 nF  SEMIKRON IGBT Transistor Modules Capacitance, Gate 10.8 nF   Capacitance, Input 10.8 nF (Typ.)  SEMIKRON Capacitance, Input 10.8 nF (Typ.)  IGBT Transistor Modules Capacitance, Input 10.8 nF (Typ.)  SEMIKRON IGBT Transistor Modules Capacitance, Input 10.8 nF (Typ.)   Channel Type N  SEMIKRON Channel Type N  IGBT Transistor Modules Channel Type N  SEMIKRON IGBT Transistor Modules Channel Type N   Configuration Dual  SEMIKRON Configuration Dual  IGBT Transistor Modules Configuration Dual  SEMIKRON IGBT Transistor Modules Configuration Dual   Current, Collector 260 A  SEMIKRON Current, Collector 260 A  IGBT Transistor Modules Current, Collector 260 A  SEMIKRON IGBT Transistor Modules Current, Collector 260 A   Current, Continuous Collector 260 A  SEMIKRON Current, Continuous Collector 260 A  IGBT Transistor Modules Current, Continuous Collector 260 A  SEMIKRON IGBT Transistor Modules Current, Continuous Collector 260 A   Dimensions 106.4 x 61.4 x 30.5 mm  SEMIKRON Dimensions 106.4 x 61.4 x 30.5 mm  IGBT Transistor Modules Dimensions 106.4 x 61.4 x 30.5 mm  SEMIKRON IGBT Transistor Modules Dimensions 106.4 x 61.4 x 30.5 mm   Energy Rating 18 mJ  SEMIKRON Energy Rating 18 mJ  IGBT Transistor Modules Energy Rating 18 mJ  SEMIKRON IGBT Transistor Modules Energy Rating 18 mJ   Height 1.201" (30.5mm)  SEMIKRON Height 1.201" (30.5mm)  IGBT Transistor Modules Height 1.201" (30.5mm)  SEMIKRON IGBT Transistor Modules Height 1.201" (30.5mm)   Inductance, Collector to Emitter 20 nH (Max.)  SEMIKRON Inductance, Collector to Emitter 20 nH (Max.)  IGBT Transistor Modules Inductance, Collector to Emitter 20 nH (Max.)  SEMIKRON IGBT Transistor Modules Inductance, Collector to Emitter 20 nH (Max.)   Length 4.188" (106.4mm)  SEMIKRON Length 4.188" (106.4mm)  IGBT Transistor Modules Length 4.188" (106.4mm)  SEMIKRON IGBT Transistor Modules Length 4.188" (106.4mm)   Mounting Type Screw  SEMIKRON Mounting Type Screw  IGBT Transistor Modules Mounting Type Screw  SEMIKRON IGBT Transistor Modules Mounting Type Screw   Number of Pins 7  SEMIKRON Number of Pins 7  IGBT Transistor Modules Number of Pins 7  SEMIKRON IGBT Transistor Modules Number of Pins 7   Package Type D 56  SEMIKRON Package Type D 56  IGBT Transistor Modules Package Type D 56  SEMIKRON IGBT Transistor Modules Package Type D 56   Polarity N-Channel  SEMIKRON Polarity N-Channel  IGBT Transistor Modules Polarity N-Channel  SEMIKRON IGBT Transistor Modules Polarity N-Channel   Primary Type Si  SEMIKRON Primary Type Si  IGBT Transistor Modules Primary Type Si  SEMIKRON IGBT Transistor Modules Primary Type Si   Resistance, Collector to Emitter 4.7 Milliohms (Typ.) @ 15 V, +25°C  SEMIKRON Resistance, Collector to Emitter 4.7 Milliohms (Typ.) @ 15 V, +25°C  IGBT Transistor Modules Resistance, Collector to Emitter 4.7 Milliohms (Typ.) @ 15 V, +25°C  SEMIKRON IGBT Transistor Modules Resistance, Collector to Emitter 4.7 Milliohms (Typ.) @ 15 V, +25°C   Resistance, Thermal 4 Milliohms (Typ.) @ +25°C  SEMIKRON Resistance, Thermal 4 Milliohms (Typ.) @ +25°C  IGBT Transistor Modules Resistance, Thermal 4 Milliohms (Typ.) @ +25°C  SEMIKRON IGBT Transistor Modules Resistance, Thermal 4 Milliohms (Typ.) @ +25°C   Resistance, Thermal, Junction to Case 0.13 K/W  SEMIKRON Resistance, Thermal, Junction to Case 0.13 K/W  IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.13 K/W  SEMIKRON IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.13 K/W   Temperature, Operating, Maximum +150 °C  SEMIKRON Temperature, Operating, Maximum +150 °C  IGBT Transistor Modules Temperature, Operating, Maximum +150 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -40 °C  SEMIKRON Temperature, Operating, Minimum -40 °C  IGBT Transistor Modules Temperature, Operating, Minimum -40 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Minimum -40 °C   Temperature, Operating, Range -40 to +150 °C  SEMIKRON Temperature, Operating, Range -40 to +150 °C  IGBT Transistor Modules Temperature, Operating, Range -40 to +150 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Range -40 to +150 °C   Time, Turn-Off 110 ns  SEMIKRON Time, Turn-Off 110 ns  IGBT Transistor Modules Time, Turn-Off 110 ns  SEMIKRON IGBT Transistor Modules Time, Turn-Off 110 ns   Time, Turn-On 40 ns  SEMIKRON Time, Turn-On 40 ns  IGBT Transistor Modules Time, Turn-On 40 ns  SEMIKRON IGBT Transistor Modules Time, Turn-On 40 ns   Transistor Type IGBT  SEMIKRON Transistor Type IGBT  IGBT Transistor Modules Transistor Type IGBT  SEMIKRON IGBT Transistor Modules Transistor Type IGBT   Type Trench  SEMIKRON Type Trench  IGBT Transistor Modules Type Trench  SEMIKRON IGBT Transistor Modules Type Trench   Voltage, Collector to Emitter 1200 V  SEMIKRON Voltage, Collector to Emitter 1200 V  IGBT Transistor Modules Voltage, Collector to Emitter 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter 1200 V   Voltage, Collector to Emitter Shorted 1200 V  SEMIKRON Voltage, Collector to Emitter Shorted 1200 V  IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V   Voltage, Gate to Emitter ±20 V  SEMIKRON Voltage, Gate to Emitter ±20 V  IGBT Transistor Modules Voltage, Gate to Emitter ±20 V  SEMIKRON IGBT Transistor Modules Voltage, Gate to Emitter ±20 V   Voltage, Gate to Emitter Threshold 5.8 V (Typ.) @ 6 mA  SEMIKRON Voltage, Gate to Emitter Threshold 5.8 V (Typ.) @ 6 mA  IGBT Transistor Modules Voltage, Gate to Emitter Threshold 5.8 V (Typ.) @ 6 mA  SEMIKRON IGBT Transistor Modules Voltage, Gate to Emitter Threshold 5.8 V (Typ.) @ 6 mA   Width 2.417" (61.4mm)  SEMIKRON Width 2.417" (61.4mm)  IGBT Transistor Modules Width 2.417" (61.4mm)  SEMIKRON IGBT Transistor Modules Width 2.417" (61.4mm)