| Brand/Series |
IGBT Series |
|
| Capacitance, Gate |
32.3 nF |
|
| Channel Type |
N |
|
| Configuration |
Array |
|
| Current, Collector |
642 A |
|
| Current, Continuous Collector |
642 A |
|
| Energy Rating |
100 mJ |
|
| Height |
0.669" (17mm) |
|
| Length |
5.885" (149.5mm) |
|
| Package Type |
SEMIX 33c |
|
| Polarity |
N-Channel |
|
| Primary Type |
Si |
|
| Resistance, Thermal, Junction to Case |
0.061 K/W |
|
| Switching Loss |
95 @ 125°C (Typ.) |
|
| Temperature, Operating, Maximum |
+150 °C |
|
| Temperature, Operating, Minimum |
-40 °C |
|
| Temperature, Operating, Range |
-40 to +150 °C |
|
| Transistor Type |
IGBT |
|
| Type |
Trench |
|
| Voltage and Current Rating |
1200 V, 700 A @ 25°C |
|
| Voltage, Collector to Emitter Shorted |
1200 V |
|
| Voltage, Saturation, Collector to Emitter |
1.7 V @ 25°C (Typ.) |
|
| 关键词 |