| Brand/Series |
IGBT Series |
|
| Capacitance, Gate |
3.1 nF |
|
| Configuration |
Array |
|
| Current, Collector |
60 A |
|
| Dimensions |
55 x 31 x 12 mm |
|
| Energy Rating |
3.1 mJ |
|
| Height |
0.472" (12mm) |
|
| Length |
2.165" (55mm) |
|
| Mounting Type |
Through Hole |
|
| Number of Pins |
19 |
|
| Package Type |
T-52 |
|
| Polarity |
N-Channel |
|
| Primary Type |
Si |
|
| Temperature, Operating, Maximum |
+175 °C |
|
| Temperature, Operating, Minimum |
-40 °C |
|
| Temperature, Operating, Range |
-40 to +175 °C |
|
| Transistor Type |
IGBT |
|
| Type |
Trench |
|
| Voltage, Collector to Emitter |
600 V |
|
| Voltage, Collector to Emitter Shorted |
600 V |
|
| Voltage, Gate to Emitter |
±20 V |
|
| Width |
1.22" (31mm) |
|
| 关键词 |