| Brand/Series |
IGBT Series |
|
| Capacitance, Gate |
5.6 nF |
|
| Channel Type |
N |
|
| Configuration |
Dual |
|
| Current, Collector |
130 A |
|
| Current, Continuous Collector |
130 A |
|
| Energy Rating |
7 mJ |
|
| Fall Time |
35 nS (Typ.) |
|
| Height |
1.201" (30.5mm) |
|
| Mounting Type |
Screw |
|
| Operating and Storage Temperature |
-40 to 150 °C |
|
| Package Type |
Semitrans2 |
|
| Polarity |
N-Channel |
|
| Primary Type |
Si |
|
| Resistance, Thermal, Junction to Case |
0.27 K/W |
|
| Switching Loss |
4 mJ (Typ.) |
|
| Temperature, Operating, Maximum |
+150 °C |
|
| Temperature, Operating, Range |
-40 to +150 °C |
|
| Time, Rise |
40 nS (Typ.) |
|
| Transistor Type |
IGBT |
|
| Type |
Standard |
|
| Voltage and Current Rating |
600 V, 130 A |
|
| Voltage, Breakdown, Collector to Emitter |
600 V |
|
| Voltage, Collector to Emitter |
600 V |
|
| Voltage, Collector to Emitter Shorted |
600 V |
|
| Voltage, Gate Threshold, Range |
4.5 V (Min.) to 6.5 V (Max.) |
|
| Voltage, Saturation, Collector to Emitter |
600 V |
|
| Width |
1.339" (34mm) |
|
| 关键词 |