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1200 V Collector-to-Emitter Voltage, Trench Insulated Gate Bipolar Transistor Module

Homogeneous Si

High short circuit capability
For AC inverter drives, UPS, electronic welders applications.

Brand/Series	IGBT Series
Capacitance, Gate	32 nF
Capacitance, Input	32 nF (Typ.)
Channel Type	N
Configuration	Dual
Current, Collector	660 A
Current, Continuous Collector	660 A
Dimensions	106.4 x 61.4 x 30.5 mm
Energy Rating	103 mJ
Height	1.201" (30.5mm)
Inductance, Collector to Emitter	20 nH (Max.)
Length	4.188" (106.4mm)
Mounting Type	Screw
Number of Pins	7
Package Type	D 56
Polarity	N-Channel
Primary Type	Si
Resistance, Collector to Emitter	1.8 Milliohms (Typ.)
Resistance, Thermal	0.055 K?W (Max.) (Junction-Case)
Resistance, Thermal, Junction to Case	0.055 K/W
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-40 °C
Temperature, Operating, Range	-40 to +150 °C
Time, Turn-Off	670 ns (Typ.)
Time, Turn-On	290 ns (Typ.)
Transistor Type	IGBT
Type	Trench
Voltage, Collector to Emitter	1200 V
Voltage, Collector to Emitter Shorted	1200 V
Voltage, Gate to Emitter	±20 V
Voltage, Gate to Emitter Threshold	5.8 V (Typ.)
Width	2.417" (61.4mm)
关键词

Brand/Series IGBT Series  SEMIKRON Brand/Series IGBT Series  IGBT Transistor Modules Brand/Series IGBT Series  SEMIKRON IGBT Transistor Modules Brand/Series IGBT Series   Capacitance, Gate 32 nF  SEMIKRON Capacitance, Gate 32 nF  IGBT Transistor Modules Capacitance, Gate 32 nF  SEMIKRON IGBT Transistor Modules Capacitance, Gate 32 nF   Capacitance, Input 32 nF (Typ.)  SEMIKRON Capacitance, Input 32 nF (Typ.)  IGBT Transistor Modules Capacitance, Input 32 nF (Typ.)  SEMIKRON IGBT Transistor Modules Capacitance, Input 32 nF (Typ.)   Channel Type N  SEMIKRON Channel Type N  IGBT Transistor Modules Channel Type N  SEMIKRON IGBT Transistor Modules Channel Type N   Configuration Dual  SEMIKRON Configuration Dual  IGBT Transistor Modules Configuration Dual  SEMIKRON IGBT Transistor Modules Configuration Dual   Current, Collector 660 A  SEMIKRON Current, Collector 660 A  IGBT Transistor Modules Current, Collector 660 A  SEMIKRON IGBT Transistor Modules Current, Collector 660 A   Current, Continuous Collector 660 A  SEMIKRON Current, Continuous Collector 660 A  IGBT Transistor Modules Current, Continuous Collector 660 A  SEMIKRON IGBT Transistor Modules Current, Continuous Collector 660 A   Dimensions 106.4 x 61.4 x 30.5 mm  SEMIKRON Dimensions 106.4 x 61.4 x 30.5 mm  IGBT Transistor Modules Dimensions 106.4 x 61.4 x 30.5 mm  SEMIKRON IGBT Transistor Modules Dimensions 106.4 x 61.4 x 30.5 mm   Energy Rating 103 mJ  SEMIKRON Energy Rating 103 mJ  IGBT Transistor Modules Energy Rating 103 mJ  SEMIKRON IGBT Transistor Modules Energy Rating 103 mJ   Height 1.201" (30.5mm)  SEMIKRON Height 1.201" (30.5mm)  IGBT Transistor Modules Height 1.201" (30.5mm)  SEMIKRON IGBT Transistor Modules Height 1.201" (30.5mm)   Inductance, Collector to Emitter 20 nH (Max.)  SEMIKRON Inductance, Collector to Emitter 20 nH (Max.)  IGBT Transistor Modules Inductance, Collector to Emitter 20 nH (Max.)  SEMIKRON IGBT Transistor Modules Inductance, Collector to Emitter 20 nH (Max.)   Length 4.188" (106.4mm)  SEMIKRON Length 4.188" (106.4mm)  IGBT Transistor Modules Length 4.188" (106.4mm)  SEMIKRON IGBT Transistor Modules Length 4.188" (106.4mm)   Mounting Type Screw  SEMIKRON Mounting Type Screw  IGBT Transistor Modules Mounting Type Screw  SEMIKRON IGBT Transistor Modules Mounting Type Screw   Number of Pins 7  SEMIKRON Number of Pins 7  IGBT Transistor Modules Number of Pins 7  SEMIKRON IGBT Transistor Modules Number of Pins 7   Package Type D 56  SEMIKRON Package Type D 56  IGBT Transistor Modules Package Type D 56  SEMIKRON IGBT Transistor Modules Package Type D 56   Polarity N-Channel  SEMIKRON Polarity N-Channel  IGBT Transistor Modules Polarity N-Channel  SEMIKRON IGBT Transistor Modules Polarity N-Channel   Primary Type Si  SEMIKRON Primary Type Si  IGBT Transistor Modules Primary Type Si  SEMIKRON IGBT Transistor Modules Primary Type Si   Resistance, Collector to Emitter 1.8 Milliohms (Typ.)  SEMIKRON Resistance, Collector to Emitter 1.8 Milliohms (Typ.)  IGBT Transistor Modules Resistance, Collector to Emitter 1.8 Milliohms (Typ.)  SEMIKRON IGBT Transistor Modules Resistance, Collector to Emitter 1.8 Milliohms (Typ.)   Resistance, Thermal 0.055 K?W (Max.) (Junction-Case)  SEMIKRON Resistance, Thermal 0.055 K?W (Max.) (Junction-Case)  IGBT Transistor Modules Resistance, Thermal 0.055 K?W (Max.) (Junction-Case)  SEMIKRON IGBT Transistor Modules Resistance, Thermal 0.055 K?W (Max.) (Junction-Case)   Resistance, Thermal, Junction to Case 0.055 K/W  SEMIKRON Resistance, Thermal, Junction to Case 0.055 K/W  IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.055 K/W  SEMIKRON IGBT Transistor Modules Resistance, Thermal, Junction to Case 0.055 K/W   Temperature, Operating, Maximum +150 °C  SEMIKRON Temperature, Operating, Maximum +150 °C  IGBT Transistor Modules Temperature, Operating, Maximum +150 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -40 °C  SEMIKRON Temperature, Operating, Minimum -40 °C  IGBT Transistor Modules Temperature, Operating, Minimum -40 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Minimum -40 °C   Temperature, Operating, Range -40 to +150 °C  SEMIKRON Temperature, Operating, Range -40 to +150 °C  IGBT Transistor Modules Temperature, Operating, Range -40 to +150 °C  SEMIKRON IGBT Transistor Modules Temperature, Operating, Range -40 to +150 °C   Time, Turn-Off 670 ns (Typ.)  SEMIKRON Time, Turn-Off 670 ns (Typ.)  IGBT Transistor Modules Time, Turn-Off 670 ns (Typ.)  SEMIKRON IGBT Transistor Modules Time, Turn-Off 670 ns (Typ.)   Time, Turn-On 290 ns (Typ.)  SEMIKRON Time, Turn-On 290 ns (Typ.)  IGBT Transistor Modules Time, Turn-On 290 ns (Typ.)  SEMIKRON IGBT Transistor Modules Time, Turn-On 290 ns (Typ.)   Transistor Type IGBT  SEMIKRON Transistor Type IGBT  IGBT Transistor Modules Transistor Type IGBT  SEMIKRON IGBT Transistor Modules Transistor Type IGBT   Type Trench  SEMIKRON Type Trench  IGBT Transistor Modules Type Trench  SEMIKRON IGBT Transistor Modules Type Trench   Voltage, Collector to Emitter 1200 V  SEMIKRON Voltage, Collector to Emitter 1200 V  IGBT Transistor Modules Voltage, Collector to Emitter 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter 1200 V   Voltage, Collector to Emitter Shorted 1200 V  SEMIKRON Voltage, Collector to Emitter Shorted 1200 V  IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V  SEMIKRON IGBT Transistor Modules Voltage, Collector to Emitter Shorted 1200 V   Voltage, Gate to Emitter ±20 V  SEMIKRON Voltage, Gate to Emitter ±20 V  IGBT Transistor Modules Voltage, Gate to Emitter ±20 V  SEMIKRON IGBT Transistor Modules Voltage, Gate to Emitter ±20 V   Voltage, Gate to Emitter Threshold 5.8 V (Typ.)  SEMIKRON Voltage, Gate to Emitter Threshold 5.8 V (Typ.)  IGBT Transistor Modules Voltage, Gate to Emitter Threshold 5.8 V (Typ.)  SEMIKRON IGBT Transistor Modules Voltage, Gate to Emitter Threshold 5.8 V (Typ.)   Width 2.417" (61.4mm)  SEMIKRON Width 2.417" (61.4mm)  IGBT Transistor Modules Width 2.417" (61.4mm)  SEMIKRON IGBT Transistor Modules Width 2.417" (61.4mm)