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Brand/Series	2N666 Series
Capacitance, Input	50 pF
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
Current, Drain	±0.9 A
Dimensions	9.39 x 9.01 x 4.58 mm
Height	0.18" (4.57mm)
Mounting Type	Through Hole
Number of Elements per Chip	1
Number of Pins	3
Package Type	TO-205AF
Power Dissipation	6.25 W
Resistance, Drain to Source On	5.3 Ω
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Time, Turn-Off Delay	10 ns
Time, Turn-On Delay	8 ns
Transconductance, Forward	195 mS
Voltage, Drain to Source	110 V
Voltage, Forward, Diode	-1.2 V
Voltage, Gate to Source	±40 V
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Brand/Series 2N666 Series  Solid State Manufacturing Brand/Series 2N666 Series  MOSFET Transistors Brand/Series 2N666 Series  Solid State Manufacturing MOSFET Transistors Brand/Series 2N666 Series   Capacitance, Input 50 pF  Solid State Manufacturing Capacitance, Input 50 pF  MOSFET Transistors Capacitance, Input 50 pF  Solid State Manufacturing MOSFET Transistors Capacitance, Input 50 pF   Channel Mode Enhancement  Solid State Manufacturing Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Solid State Manufacturing MOSFET Transistors Channel Mode Enhancement   Channel Type N  Solid State Manufacturing Channel Type N  MOSFET Transistors Channel Type N  Solid State Manufacturing MOSFET Transistors Channel Type N   Configuration Single  Solid State Manufacturing Configuration Single  MOSFET Transistors Configuration Single  Solid State Manufacturing MOSFET Transistors Configuration Single   Current, Drain ±0.9 A  Solid State Manufacturing Current, Drain ±0.9 A  MOSFET Transistors Current, Drain ±0.9 A  Solid State Manufacturing MOSFET Transistors Current, Drain ±0.9 A   Dimensions 9.39 x 9.01 x 4.58 mm  Solid State Manufacturing Dimensions 9.39 x 9.01 x 4.58 mm  MOSFET Transistors Dimensions 9.39 x 9.01 x 4.58 mm  Solid State Manufacturing MOSFET Transistors Dimensions 9.39 x 9.01 x 4.58 mm   Height 0.18" (4.57mm)  Solid State Manufacturing Height 0.18" (4.57mm)  MOSFET Transistors Height 0.18" (4.57mm)  Solid State Manufacturing MOSFET Transistors Height 0.18" (4.57mm)   Mounting Type Through Hole  Solid State Manufacturing Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  Solid State Manufacturing MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  Solid State Manufacturing Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Solid State Manufacturing MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Solid State Manufacturing Number of Pins 3  MOSFET Transistors Number of Pins 3  Solid State Manufacturing MOSFET Transistors Number of Pins 3   Package Type TO-205AF  Solid State Manufacturing Package Type TO-205AF  MOSFET Transistors Package Type TO-205AF  Solid State Manufacturing MOSFET Transistors Package Type TO-205AF   Power Dissipation 6.25 W  Solid State Manufacturing Power Dissipation 6.25 W  MOSFET Transistors Power Dissipation 6.25 W  Solid State Manufacturing MOSFET Transistors Power Dissipation 6.25 W   Resistance, Drain to Source On 5.3 Ω  Solid State Manufacturing Resistance, Drain to Source On 5.3 Ω  MOSFET Transistors Resistance, Drain to Source On 5.3 Ω  Solid State Manufacturing MOSFET Transistors Resistance, Drain to Source On 5.3 Ω   Temperature, Operating, Maximum +150 °C  Solid State Manufacturing Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Solid State Manufacturing MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Solid State Manufacturing Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Solid State Manufacturing MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Solid State Manufacturing Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Solid State Manufacturing MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 10 ns  Solid State Manufacturing Time, Turn-Off Delay 10 ns  MOSFET Transistors Time, Turn-Off Delay 10 ns  Solid State Manufacturing MOSFET Transistors Time, Turn-Off Delay 10 ns   Time, Turn-On Delay 8 ns  Solid State Manufacturing Time, Turn-On Delay 8 ns  MOSFET Transistors Time, Turn-On Delay 8 ns  Solid State Manufacturing MOSFET Transistors Time, Turn-On Delay 8 ns   Transconductance, Forward 195 mS  Solid State Manufacturing Transconductance, Forward 195 mS  MOSFET Transistors Transconductance, Forward 195 mS  Solid State Manufacturing MOSFET Transistors Transconductance, Forward 195 mS   Voltage, Drain to Source 110 V  Solid State Manufacturing Voltage, Drain to Source 110 V  MOSFET Transistors Voltage, Drain to Source 110 V  Solid State Manufacturing MOSFET Transistors Voltage, Drain to Source 110 V   Voltage, Forward, Diode -1.2 V  Solid State Manufacturing Voltage, Forward, Diode -1.2 V  MOSFET Transistors Voltage, Forward, Diode -1.2 V  Solid State Manufacturing MOSFET Transistors Voltage, Forward, Diode -1.2 V   Voltage, Gate to Source ±40 V  Solid State Manufacturing Voltage, Gate to Source ±40 V  MOSFET Transistors Voltage, Gate to Source ±40 V  Solid State Manufacturing MOSFET Transistors Voltage, Gate to Source ±40 V