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24LC16BT-I/OT - 

16K, 2K X 8 2.5V SERIAL EE, IND

Microchip Technology Inc. 24LC16BT-I/OT
声明：图片仅供参考，请以实物为准！
制造商产品编号：
24LC16BT-I/OT
仓库库存编号：
70045855
技术数据表：
View 24LC16BT-I/OT Datasheet Datasheet
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由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

24LC16BT-I/OT产品信息

  Brand/Series  24LC168 Series  
  Capacitance, Input  10 pF  
  Capacitance, Output  10 pF  
  Current, Input, Leakage  ±1 μA  
  Current, Operating  0.01 mA (Read), 3 mA (Write)  
  Current, Output, Leakage  ±1 μA  
  Data Retention  >200 yrs.  
  Density  16K  
  Interface  2-Wire  
  Memory Type  Serial EEPROM  
  Organization  256×8  
  Package Type  SOT-23  
  Supply Voltage  2.5 to 5.5 V  
  Temperature, Operating  -40 to +85 °C  
  Time, Access  900 ns  
  Time, Fall  300 ns  
  Time, Rise  300 ns  
  Voltage, ESD  ≥4 kV  
  Voltage, Input, High Level  1.75 V  
  Voltage, Input, Low Level  0.75 V  
  Voltage, Output, Low Level  0.4 V  
关键词         

24LC16BT-I/OT相关搜索

Brand/Series 24LC168 Series  Microchip Technology Inc. Brand/Series 24LC168 Series  EEPROM Memory Chips Brand/Series 24LC168 Series  Microchip Technology Inc. EEPROM Memory Chips Brand/Series 24LC168 Series   Capacitance, Input 10 pF  Microchip Technology Inc. Capacitance, Input 10 pF  EEPROM Memory Chips Capacitance, Input 10 pF  Microchip Technology Inc. EEPROM Memory Chips Capacitance, Input 10 pF   Capacitance, Output 10 pF  Microchip Technology Inc. Capacitance, Output 10 pF  EEPROM Memory Chips Capacitance, Output 10 pF  Microchip Technology Inc. EEPROM Memory Chips Capacitance, Output 10 pF   Current, Input, Leakage ±1 μA  Microchip Technology Inc. Current, Input, Leakage ±1 μA  EEPROM Memory Chips Current, Input, Leakage ±1 μA  Microchip Technology Inc. EEPROM Memory Chips Current, Input, Leakage ±1 μA   Current, Operating 0.01 mA (Read), 3 mA (Write)  Microchip Technology Inc. Current, Operating 0.01 mA (Read), 3 mA (Write)  EEPROM Memory Chips Current, Operating 0.01 mA (Read), 3 mA (Write)  Microchip Technology Inc. EEPROM Memory Chips Current, Operating 0.01 mA (Read), 3 mA (Write)   Current, Output, Leakage ±1 μA  Microchip Technology Inc. Current, Output, Leakage ±1 μA  EEPROM Memory Chips Current, Output, Leakage ±1 μA  Microchip Technology Inc. EEPROM Memory Chips Current, Output, Leakage ±1 μA   Data Retention >200 yrs.  Microchip Technology Inc. Data Retention >200 yrs.  EEPROM Memory Chips Data Retention >200 yrs.  Microchip Technology Inc. EEPROM Memory Chips Data Retention >200 yrs.   Density 16K  Microchip Technology Inc. Density 16K  EEPROM Memory Chips Density 16K  Microchip Technology Inc. EEPROM Memory Chips Density 16K   Interface 2-Wire  Microchip Technology Inc. Interface 2-Wire  EEPROM Memory Chips Interface 2-Wire  Microchip Technology Inc. EEPROM Memory Chips Interface 2-Wire   Memory Type Serial EEPROM  Microchip Technology Inc. Memory Type Serial EEPROM  EEPROM Memory Chips Memory Type Serial EEPROM  Microchip Technology Inc. EEPROM Memory Chips Memory Type Serial EEPROM   Organization 256×8  Microchip Technology Inc. Organization 256×8  EEPROM Memory Chips Organization 256×8  Microchip Technology Inc. EEPROM Memory Chips Organization 256×8   Package Type SOT-23  Microchip Technology Inc. Package Type SOT-23  EEPROM Memory Chips Package Type SOT-23  Microchip Technology Inc. EEPROM Memory Chips Package Type SOT-23   Supply Voltage 2.5 to 5.5 V  Microchip Technology Inc. Supply Voltage 2.5 to 5.5 V  EEPROM Memory Chips Supply Voltage 2.5 to 5.5 V  Microchip Technology Inc. EEPROM Memory Chips Supply Voltage 2.5 to 5.5 V   Temperature, Operating -40 to +85 °C  Microchip Technology Inc. Temperature, Operating -40 to +85 °C  EEPROM Memory Chips Temperature, Operating -40 to +85 °C  Microchip Technology Inc. EEPROM Memory Chips Temperature, Operating -40 to +85 °C   Time, Access 900 ns  Microchip Technology Inc. Time, Access 900 ns  EEPROM Memory Chips Time, Access 900 ns  Microchip Technology Inc. EEPROM Memory Chips Time, Access 900 ns   Time, Fall 300 ns  Microchip Technology Inc. Time, Fall 300 ns  EEPROM Memory Chips Time, Fall 300 ns  Microchip Technology Inc. EEPROM Memory Chips Time, Fall 300 ns   Time, Rise 300 ns  Microchip Technology Inc. Time, Rise 300 ns  EEPROM Memory Chips Time, Rise 300 ns  Microchip Technology Inc. EEPROM Memory Chips Time, Rise 300 ns   Voltage, ESD ≥4 kV  Microchip Technology Inc. Voltage, ESD ≥4 kV  EEPROM Memory Chips Voltage, ESD ≥4 kV  Microchip Technology Inc. EEPROM Memory Chips Voltage, ESD ≥4 kV   Voltage, Input, High Level 1.75 V  Microchip Technology Inc. Voltage, Input, High Level 1.75 V  EEPROM Memory Chips Voltage, Input, High Level 1.75 V  Microchip Technology Inc. EEPROM Memory Chips Voltage, Input, High Level 1.75 V   Voltage, Input, Low Level 0.75 V  Microchip Technology Inc. Voltage, Input, Low Level 0.75 V  EEPROM Memory Chips Voltage, Input, Low Level 0.75 V  Microchip Technology Inc. EEPROM Memory Chips Voltage, Input, Low Level 0.75 V   Voltage, Output, Low Level 0.4 V  Microchip Technology Inc. Voltage, Output, Low Level 0.4 V  EEPROM Memory Chips Voltage, Output, Low Level 0.4 V  Microchip Technology Inc. EEPROM Memory Chips Voltage, Output, Low Level 0.4 V  
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