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Brand/Series	SI10 Series
Capacitance, Input	23 pF@ -25 V, 30 pF @ 25 V
Channel Mode	Enhancement
Channel Type	N, P
Configuration	Single
Current, Drain	-135, 305 mA
Dimensions	1.7 x 1.2 x 0.6 mm
Gate Charge, Total	750/1700 nC
Height	0.024" (0.6mm)
Length	0.066" (1.68mm)
Mounting Type	Surface Mount
Number of Elements per Chip	2
Number of Pins	6
Package Type	SC-89
Polarization	N-Channel and P-Channel
Power Dissipation	250 mW
Resistance, Drain to Source On	3, 8 Ω
Temperature, Operating	-55 to 150 °C
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Time, Turn-Off Delay	20, 35 ns
Time, Turn-On Delay	15, 20 ns
Transconductance, Forward	100, 200 mS
Typical Gate Charge @ Vgs	1700 nC @ 4.5 V, 750 nC @ 4.5 V
Voltage, Breakdown, Drain to Source	60/-60 V
Voltage, Drain to Source	-60, 60 V
Voltage, Forward, Diode	1.4/-1.4 V
Voltage, Gate to Source	±20 V
Width	0.047" (1.2mm)
关键词

Brand/Series SI10 Series  Siliconix / Vishay Brand/Series SI10 Series  MOSFET Transistors Brand/Series SI10 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI10 Series   Capacitance, Input 23 pF@ -25 V, 30 pF @ 25 V  Siliconix / Vishay Capacitance, Input 23 pF@ -25 V, 30 pF @ 25 V  MOSFET Transistors Capacitance, Input 23 pF@ -25 V, 30 pF @ 25 V  Siliconix / Vishay MOSFET Transistors Capacitance, Input 23 pF@ -25 V, 30 pF @ 25 V   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N, P  Siliconix / Vishay Channel Type N, P  MOSFET Transistors Channel Type N, P  Siliconix / Vishay MOSFET Transistors Channel Type N, P   Configuration Single  Siliconix / Vishay Configuration Single  MOSFET Transistors Configuration Single  Siliconix / Vishay MOSFET Transistors Configuration Single   Current, Drain -135, 305 mA  Siliconix / Vishay Current, Drain -135, 305 mA  MOSFET Transistors Current, Drain -135, 305 mA  Siliconix / Vishay MOSFET Transistors Current, Drain -135, 305 mA   Dimensions 1.7 x 1.2 x 0.6 mm  Siliconix / Vishay Dimensions 1.7 x 1.2 x 0.6 mm  MOSFET Transistors Dimensions 1.7 x 1.2 x 0.6 mm  Siliconix / Vishay MOSFET Transistors Dimensions 1.7 x 1.2 x 0.6 mm   Gate Charge, Total 750/1700 nC  Siliconix / Vishay Gate Charge, Total 750/1700 nC  MOSFET Transistors Gate Charge, Total 750/1700 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 750/1700 nC   Height 0.024" (0.6mm)  Siliconix / Vishay Height 0.024" (0.6mm)  MOSFET Transistors Height 0.024" (0.6mm)  Siliconix / Vishay MOSFET Transistors Height 0.024" (0.6mm)   Length 0.066" (1.68mm)  Siliconix / Vishay Length 0.066" (1.68mm)  MOSFET Transistors Length 0.066" (1.68mm)  Siliconix / Vishay MOSFET Transistors Length 0.066" (1.68mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 2  Siliconix / Vishay Number of Elements per Chip 2  MOSFET Transistors Number of Elements per Chip 2  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 2   Number of Pins 6  Siliconix / Vishay Number of Pins 6  MOSFET Transistors Number of Pins 6  Siliconix / Vishay MOSFET Transistors Number of Pins 6   Package Type SC-89  Siliconix / Vishay Package Type SC-89  MOSFET Transistors Package Type SC-89  Siliconix / Vishay MOSFET Transistors Package Type SC-89   Polarization N-Channel and P-Channel  Siliconix / Vishay Polarization N-Channel and P-Channel  MOSFET Transistors Polarization N-Channel and P-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel and P-Channel   Power Dissipation 250 mW  Siliconix / Vishay Power Dissipation 250 mW  MOSFET Transistors Power Dissipation 250 mW  Siliconix / Vishay MOSFET Transistors Power Dissipation 250 mW   Resistance, Drain to Source On 3, 8 Ω  Siliconix / Vishay Resistance, Drain to Source On 3, 8 Ω  MOSFET Transistors Resistance, Drain to Source On 3, 8 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 3, 8 Ω   Temperature, Operating -55 to 150 °C  Siliconix / Vishay Temperature, Operating -55 to 150 °C  MOSFET Transistors Temperature, Operating -55 to 150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating -55 to 150 °C   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 20, 35 ns  Siliconix / Vishay Time, Turn-Off Delay 20, 35 ns  MOSFET Transistors Time, Turn-Off Delay 20, 35 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 20, 35 ns   Time, Turn-On Delay 15, 20 ns  Siliconix / Vishay Time, Turn-On Delay 15, 20 ns  MOSFET Transistors Time, Turn-On Delay 15, 20 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 15, 20 ns   Transconductance, Forward 100, 200 mS  Siliconix / Vishay Transconductance, Forward 100, 200 mS  MOSFET Transistors Transconductance, Forward 100, 200 mS  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 100, 200 mS   Typical Gate Charge @ Vgs 1700 nC @ 4.5 V, 750 nC @ 4.5 V  Siliconix / Vishay Typical Gate Charge @ Vgs 1700 nC @ 4.5 V, 750 nC @ 4.5 V  MOSFET Transistors Typical Gate Charge @ Vgs 1700 nC @ 4.5 V, 750 nC @ 4.5 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 1700 nC @ 4.5 V, 750 nC @ 4.5 V   Voltage, Breakdown, Drain to Source 60/-60 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 60/-60 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 60/-60 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 60/-60 V   Voltage, Drain to Source -60, 60 V  Siliconix / Vishay Voltage, Drain to Source -60, 60 V  MOSFET Transistors Voltage, Drain to Source -60, 60 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -60, 60 V   Voltage, Forward, Diode 1.4/-1.4 V  Siliconix / Vishay Voltage, Forward, Diode 1.4/-1.4 V  MOSFET Transistors Voltage, Forward, Diode 1.4/-1.4 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1.4/-1.4 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.047" (1.2mm)  Siliconix / Vishay Width 0.047" (1.2mm)  MOSFET Transistors Width 0.047" (1.2mm)  Siliconix / Vishay MOSFET Transistors Width 0.047" (1.2mm)