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SI3552DV-T1-E3 - 

MOSFET, Dual, Complementary, 30V, 2.5/1.8A, TSOP-6

Siliconix / Vishay SI3552DV-T1-E3
声明：图片仅供参考，请以实物为准！
制造商产品编号：
SI3552DV-T1-E3
仓库库存编号：
70026103
技术数据表：
View SI3552DV-T1-E3 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

SI3552DV-T1-E3产品概述

Features:
  • Halogen-Free Option Available
  • Low-Side Switching
  • Low On-Resistance: 5 Ω
  • Low Threshold: 0.9 V (Typ.)
  • Fast Switching Speed: 35 ns (Typ.)
  • TrenchFET® Power MOSFETs: 1.5 V Rated
  • ESD Protected: 2000 V

    Applications:
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers

    • SI3552DV-T1-E3产品信息

      Brand/Series  SI35 Series  
      Channel Mode  Enhancement  
      Channel Type  N, P  
      Configuration  Single  
      Current, Drain  -1.8, 2.5 A  
      Dimensions  3.1 x 1.7 x 1 mm  
      Gate Charge, Total  2.1/2.4 nC  
      Height  0.039" (1mm)  
      Length  0.122" (3.1mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  2  
      Number of Pins  6  
      Package Type  TSOP  
      Polarization  N-Channel and P-Channel  
      Power Dissipation  1.15 W  
      Resistance, Drain to Source On  0.175, 0.36 Ω  
      Temperature, Operating  -55 to 150 °C  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Thermal Resistance, Junction to Ambient  130 °C/W  
      Time, Turn-Off Delay  12, 13 ns  
      Time, Turn-On Delay  7, 8 ns  
      Transconductance, Forward  2.4, 4.3 S  
      Typical Gate Charge @ Vgs  2.1 nC @ 5 V, 2.4 nC @ 5 V  
      Voltage, Breakdown, Drain to Source  30/-30 V  
      Voltage, Drain to Source  -30, 30 V  
      Voltage, Forward, Diode  0.81/-0.83 V  
      Voltage, Gate to Source  ±20 V  
      Width  0.067" (1.7mm)  
    关键词         

    SI3552DV-T1-E3相关搜索

    Brand/Series SI35 Series  Siliconix / Vishay Brand/Series SI35 Series  MOSFET Transistors Brand/Series SI35 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI35 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N, P  Siliconix / Vishay Channel Type N, P  MOSFET Transistors Channel Type N, P  Siliconix / Vishay MOSFET Transistors Channel Type N, P   Configuration Single  Siliconix / Vishay Configuration Single  MOSFET Transistors Configuration Single  Siliconix / Vishay MOSFET Transistors Configuration Single   Current, Drain -1.8, 2.5 A  Siliconix / Vishay Current, Drain -1.8, 2.5 A  MOSFET Transistors Current, Drain -1.8, 2.5 A  Siliconix / Vishay MOSFET Transistors Current, Drain -1.8, 2.5 A   Dimensions 3.1 x 1.7 x 1 mm  Siliconix / Vishay Dimensions 3.1 x 1.7 x 1 mm  MOSFET Transistors Dimensions 3.1 x 1.7 x 1 mm  Siliconix / Vishay MOSFET Transistors Dimensions 3.1 x 1.7 x 1 mm   Gate Charge, Total 2.1/2.4 nC  Siliconix / Vishay Gate Charge, Total 2.1/2.4 nC  MOSFET Transistors Gate Charge, Total 2.1/2.4 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 2.1/2.4 nC   Height 0.039" (1mm)  Siliconix / Vishay Height 0.039" (1mm)  MOSFET Transistors Height 0.039" (1mm)  Siliconix / Vishay MOSFET Transistors Height 0.039" (1mm)   Length 0.122" (3.1mm)  Siliconix / Vishay Length 0.122" (3.1mm)  MOSFET Transistors Length 0.122" (3.1mm)  Siliconix / Vishay MOSFET Transistors Length 0.122" (3.1mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 2  Siliconix / Vishay Number of Elements per Chip 2  MOSFET Transistors Number of Elements per Chip 2  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 2   Number of Pins 6  Siliconix / Vishay Number of Pins 6  MOSFET Transistors Number of Pins 6  Siliconix / Vishay MOSFET Transistors Number of Pins 6   Package Type TSOP  Siliconix / Vishay Package Type TSOP  MOSFET Transistors Package Type TSOP  Siliconix / Vishay MOSFET Transistors Package Type TSOP   Polarization N-Channel and P-Channel  Siliconix / Vishay Polarization N-Channel and P-Channel  MOSFET Transistors Polarization N-Channel and P-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel and P-Channel   Power Dissipation 1.15 W  Siliconix / Vishay Power Dissipation 1.15 W  MOSFET Transistors Power Dissipation 1.15 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 1.15 W   Resistance, Drain to Source On 0.175, 0.36 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.175, 0.36 Ω  MOSFET Transistors Resistance, Drain to Source On 0.175, 0.36 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.175, 0.36 Ω   Temperature, Operating -55 to 150 °C  Siliconix / Vishay Temperature, Operating -55 to 150 °C  MOSFET Transistors Temperature, Operating -55 to 150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating -55 to 150 °C   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 130 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 130 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 130 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 130 °C/W   Time, Turn-Off Delay 12, 13 ns  Siliconix / Vishay Time, Turn-Off Delay 12, 13 ns  MOSFET Transistors Time, Turn-Off Delay 12, 13 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 12, 13 ns   Time, Turn-On Delay 7, 8 ns  Siliconix / Vishay Time, Turn-On Delay 7, 8 ns  MOSFET Transistors Time, Turn-On Delay 7, 8 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 7, 8 ns   Transconductance, Forward 2.4, 4.3 S  Siliconix / Vishay Transconductance, Forward 2.4, 4.3 S  MOSFET Transistors Transconductance, Forward 2.4, 4.3 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 2.4, 4.3 S   Typical Gate Charge @ Vgs 2.1 nC @ 5 V, 2.4 nC @ 5 V  Siliconix / Vishay Typical Gate Charge @ Vgs 2.1 nC @ 5 V, 2.4 nC @ 5 V  MOSFET Transistors Typical Gate Charge @ Vgs 2.1 nC @ 5 V, 2.4 nC @ 5 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 2.1 nC @ 5 V, 2.4 nC @ 5 V   Voltage, Breakdown, Drain to Source 30/-30 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 30/-30 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 30/-30 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 30/-30 V   Voltage, Drain to Source -30, 30 V  Siliconix / Vishay Voltage, Drain to Source -30, 30 V  MOSFET Transistors Voltage, Drain to Source -30, 30 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -30, 30 V   Voltage, Forward, Diode 0.81/-0.83 V  Siliconix / Vishay Voltage, Forward, Diode 0.81/-0.83 V  MOSFET Transistors Voltage, Forward, Diode 0.81/-0.83 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 0.81/-0.83 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.067" (1.7mm)  Siliconix / Vishay Width 0.067" (1.7mm)  MOSFET Transistors Width 0.067" (1.7mm)  Siliconix / Vishay MOSFET Transistors Width 0.067" (1.7mm)  
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