| Brand/Series |
SI39 Series |
|
| Channel Mode |
Enhancement |
|
| Channel Type |
N |
|
| Configuration |
Single |
|
| Current, Drain |
2 A |
|
| Dimensions |
3.1 x 1.7 x 1 mm |
|
| Gate Charge, Total |
2.1 nC |
|
| Height |
0.039" (1mm) |
|
| Length |
0.122" (3.1mm) |
|
| Mounting Type |
Surface Mount |
|
| Number of Elements per Chip |
2 |
|
| Number of Pins |
6 |
|
| Package Type |
TSOP |
|
| Polarization |
N-Channel |
|
| Power Dissipation |
0.83 W |
|
| Resistance, Drain to Source On |
0.2 Ω |
|
| Temperature, Operating |
-55 to 150 °C |
|
| Temperature, Operating, Maximum |
+150 °C |
|
| Temperature, Operating, Minimum |
-55 °C |
|
| Temperature, Operating, Range |
-55 to +150 °C |
|
| Thermal Resistance, Junction to Ambient |
130 °C/W |
|
| Time, Turn-Off Delay |
14 ns |
|
| Time, Turn-On Delay |
10 ns |
|
| Transconductance, Forward |
5 S |
|
| Typical Gate Charge @ Vgs |
2.1 nC @ 4.5 V |
|
| Voltage, Breakdown, Drain to Source |
20 V |
|
| Voltage, Drain to Source |
20 V |
|
| Voltage, Forward, Diode |
1.1 V |
|
| Voltage, Gate to Source |
±12 V |
|
| Width |
0.067" (1.7mm) |
|
| 关键词 |