| Brand/Series |
SI49 Series |
|
| Capacitance, Input |
840 pF @ 30 V |
|
| Channel Mode |
Enhancement |
|
| Channel Type |
N |
|
| Configuration |
Dual Gate, Dual Source, Quad Drain |
|
| Current, Drain |
6.5 A |
|
| Dimensions |
5 x 4 x 1.55 mm |
|
| Gate Charge, Total |
17 nC |
|
| Height |
0.061" (1.55mm) |
|
| Length |
0.196" (5mm) |
|
| Mounting Type |
Surface Mount |
|
| Number of Elements per Chip |
2 |
|
| Number of Pins |
8 |
|
| Package Type |
SO-8 |
|
| Polarization |
N-Channel |
|
| Power Dissipation |
3.7 W |
|
| Resistance, Drain to Source On |
0.052 Ω |
|
| Temperature, Operating |
-55 to 175 °C |
|
| Temperature, Operating, Maximum |
+175 °C |
|
| Temperature, Operating, Minimum |
-55 °C |
|
| Temperature, Operating, Range |
-55 to +175 °C |
|
| Thermal Resistance, Junction to Ambient |
50 °C/W |
|
| Time, Turn-Off Delay |
25 ns |
|
| Time, Turn-On Delay |
20 ns |
|
| Transconductance, Forward |
24 S |
|
| Typical Gate Charge @ Vgs |
17 nC @ 10 V |
|
| Voltage, Breakdown, Drain to Source |
60 V |
|
| Voltage, Drain to Source |
60 V |
|
| Voltage, Forward, Diode |
1.2 V |
|
| Voltage, Gate to Source |
±20 V |
|
| Width |
0.157" (4mm) |
|
| 关键词 |