关于我们 | 联系我们

库存查询

Features:

Halogen-Free Option Available

Low-Side Switching

Low On-Resistance: 5 Ω

Low Threshold: 0.9 V (Typ.)

Fast Switching Speed: 35 ns (Typ.)

TrenchFET® Power MOSFETs: 1.5 V Rated

ESD Protected: 2000 V

Applications:

Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories

Battery Operated Systems

Power Supply Converter Circuits

Load/Power Switching Cell Phones, Pagers

Brand/Series	SI55 Series
Channel Mode	Enhancement
Channel Type	N, P
Configuration	Dual Gate, Dual Source, Quad Drain
Current, Drain	-0.9, 0.9 A
Dimensions	3.1 x 1.7 x 1.1 mm
Gate Charge, Total	4/3 nC
Height	0.043" (1.1mm)
Length	0.122" (3.1mm)
Mounting Type	Surface Mount
Number of Elements per Chip	2
Number of Pins	8
Package Type	1206-8 ChipFET
Polarization	N-Channel and P-Channel
Power Dissipation	1.1 W
Resistance, Drain to Source On	0.075, 0.155 Ω
Temperature, Operating	-55 to 150 °C
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Thermal Resistance, Junction to Ambient	90 °C/W
Time, Turn-Off Delay	19, 25 ns
Time, Turn-On Delay	12, 13 ns
Transconductance, Forward	5, 8 S
Typical Gate Charge @ Vgs	3 nC @ 10 V, 4 nC @ 10 V
Voltage, Breakdown, Drain to Source	20/-20 V
Voltage, Drain to Source	-20, 20 V
Voltage, Forward, Diode	0.8/-0.8 V
Voltage, Gate to Source	±12 V
Width	0.067" (1.7mm)
关键词

Brand/Series SI55 Series  Siliconix / Vishay Brand/Series SI55 Series  MOSFET Transistors Brand/Series SI55 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI55 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N, P  Siliconix / Vishay Channel Type N, P  MOSFET Transistors Channel Type N, P  Siliconix / Vishay MOSFET Transistors Channel Type N, P   Configuration Dual Gate, Dual Source, Quad Drain  Siliconix / Vishay Configuration Dual Gate, Dual Source, Quad Drain  MOSFET Transistors Configuration Dual Gate, Dual Source, Quad Drain  Siliconix / Vishay MOSFET Transistors Configuration Dual Gate, Dual Source, Quad Drain   Current, Drain -0.9, 0.9 A  Siliconix / Vishay Current, Drain -0.9, 0.9 A  MOSFET Transistors Current, Drain -0.9, 0.9 A  Siliconix / Vishay MOSFET Transistors Current, Drain -0.9, 0.9 A   Dimensions 3.1 x 1.7 x 1.1 mm  Siliconix / Vishay Dimensions 3.1 x 1.7 x 1.1 mm  MOSFET Transistors Dimensions 3.1 x 1.7 x 1.1 mm  Siliconix / Vishay MOSFET Transistors Dimensions 3.1 x 1.7 x 1.1 mm   Gate Charge, Total 4/3 nC  Siliconix / Vishay Gate Charge, Total 4/3 nC  MOSFET Transistors Gate Charge, Total 4/3 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 4/3 nC   Height 0.043" (1.1mm)  Siliconix / Vishay Height 0.043" (1.1mm)  MOSFET Transistors Height 0.043" (1.1mm)  Siliconix / Vishay MOSFET Transistors Height 0.043" (1.1mm)   Length 0.122" (3.1mm)  Siliconix / Vishay Length 0.122" (3.1mm)  MOSFET Transistors Length 0.122" (3.1mm)  Siliconix / Vishay MOSFET Transistors Length 0.122" (3.1mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 2  Siliconix / Vishay Number of Elements per Chip 2  MOSFET Transistors Number of Elements per Chip 2  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 2   Number of Pins 8  Siliconix / Vishay Number of Pins 8  MOSFET Transistors Number of Pins 8  Siliconix / Vishay MOSFET Transistors Number of Pins 8   Package Type 1206-8 ChipFET  Siliconix / Vishay Package Type 1206-8 ChipFET  MOSFET Transistors Package Type 1206-8 ChipFET  Siliconix / Vishay MOSFET Transistors Package Type 1206-8 ChipFET   Polarization N-Channel and P-Channel  Siliconix / Vishay Polarization N-Channel and P-Channel  MOSFET Transistors Polarization N-Channel and P-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel and P-Channel   Power Dissipation 1.1 W  Siliconix / Vishay Power Dissipation 1.1 W  MOSFET Transistors Power Dissipation 1.1 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 1.1 W   Resistance, Drain to Source On 0.075, 0.155 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.075, 0.155 Ω  MOSFET Transistors Resistance, Drain to Source On 0.075, 0.155 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.075, 0.155 Ω   Temperature, Operating -55 to 150 °C  Siliconix / Vishay Temperature, Operating -55 to 150 °C  MOSFET Transistors Temperature, Operating -55 to 150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating -55 to 150 °C   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 90 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 90 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 90 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 90 °C/W   Time, Turn-Off Delay 19, 25 ns  Siliconix / Vishay Time, Turn-Off Delay 19, 25 ns  MOSFET Transistors Time, Turn-Off Delay 19, 25 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 19, 25 ns   Time, Turn-On Delay 12, 13 ns  Siliconix / Vishay Time, Turn-On Delay 12, 13 ns  MOSFET Transistors Time, Turn-On Delay 12, 13 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 12, 13 ns   Transconductance, Forward 5, 8 S  Siliconix / Vishay Transconductance, Forward 5, 8 S  MOSFET Transistors Transconductance, Forward 5, 8 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 5, 8 S   Typical Gate Charge @ Vgs 3 nC @ 10 V, 4 nC @ 10 V  Siliconix / Vishay Typical Gate Charge @ Vgs 3 nC @ 10 V, 4 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 3 nC @ 10 V, 4 nC @ 10 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 3 nC @ 10 V, 4 nC @ 10 V   Voltage, Breakdown, Drain to Source 20/-20 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 20/-20 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 20/-20 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 20/-20 V   Voltage, Drain to Source -20, 20 V  Siliconix / Vishay Voltage, Drain to Source -20, 20 V  MOSFET Transistors Voltage, Drain to Source -20, 20 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -20, 20 V   Voltage, Forward, Diode 0.8/-0.8 V  Siliconix / Vishay Voltage, Forward, Diode 0.8/-0.8 V  MOSFET Transistors Voltage, Forward, Diode 0.8/-0.8 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 0.8/-0.8 V   Voltage, Gate to Source ±12 V  Siliconix / Vishay Voltage, Gate to Source ±12 V  MOSFET Transistors Voltage, Gate to Source ±12 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±12 V   Width 0.067" (1.7mm)  Siliconix / Vishay Width 0.067" (1.7mm)  MOSFET Transistors Width 0.067" (1.7mm)  Siliconix / Vishay MOSFET Transistors Width 0.067" (1.7mm)