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Features:

Halogen-Free According to IEC 61249-2-21 Definition

TrenchFET® Power MOSFET: 1.8 V Rated

Ultra Low On-Resistance for Increased Battery Life

New PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile

Compliant to RoHS Directive 2002/95/EC

Applications:

Load/Power Switching in Portable Devices

Brand/Series	SI71 Series
Channel Mode	Enhancement
Channel Type	P
Configuration	Quad Drain, Triple Source
Current, Drain	-7.8 A
Dimensions	3.15 x 3.15 x 1.07 mm
Fall Time	240 ns
Gate Charge, Total	44 nC
Height	0.042" (1.07mm)
Length	0.124" (3.15mm)
Mounting Type	Surface Mount
Number of Elements per Chip	1
Number of Pins	8
Operating and Storage Temperature	C55 to +150 °C
Package Type	PowerPAK 1212-8
Polarization	P-Channel
Power Dissipation	1.5 W
Resistance, Drain to Source On	0.02 Ω
Resistance, Thermal, Junction to Case	2.4 °C/W
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Thermal Resistance, Junction to Ambient	33 °C/W
Time, Turn-Off Delay	400 ns
Time, Turn-On Delay	40 ns
Transconductance, Forward	58 S
Typical Gate Charge @ Vgs	34 nC @ -10 V
Voltage, Breakdown, Drain to Source	-20 V
Voltage, Drain to Source	-20 V
Voltage, Forward, Diode	-1.2 V
Voltage, Gate to Source	±8 V
Width	0.124" (3.15mm)
关键词

Brand/Series SI71 Series  Siliconix / Vishay Brand/Series SI71 Series  MOSFET Transistors Brand/Series SI71 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI71 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type P  Siliconix / Vishay Channel Type P  MOSFET Transistors Channel Type P  Siliconix / Vishay MOSFET Transistors Channel Type P   Configuration Quad Drain, Triple Source  Siliconix / Vishay Configuration Quad Drain, Triple Source  MOSFET Transistors Configuration Quad Drain, Triple Source  Siliconix / Vishay MOSFET Transistors Configuration Quad Drain, Triple Source   Current, Drain -7.8 A  Siliconix / Vishay Current, Drain -7.8 A  MOSFET Transistors Current, Drain -7.8 A  Siliconix / Vishay MOSFET Transistors Current, Drain -7.8 A   Dimensions 3.15 x 3.15 x 1.07 mm  Siliconix / Vishay Dimensions 3.15 x 3.15 x 1.07 mm  MOSFET Transistors Dimensions 3.15 x 3.15 x 1.07 mm  Siliconix / Vishay MOSFET Transistors Dimensions 3.15 x 3.15 x 1.07 mm   Fall Time 240 ns  Siliconix / Vishay Fall Time 240 ns  MOSFET Transistors Fall Time 240 ns  Siliconix / Vishay MOSFET Transistors Fall Time 240 ns   Gate Charge, Total 44 nC  Siliconix / Vishay Gate Charge, Total 44 nC  MOSFET Transistors Gate Charge, Total 44 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 44 nC   Height 0.042" (1.07mm)  Siliconix / Vishay Height 0.042" (1.07mm)  MOSFET Transistors Height 0.042" (1.07mm)  Siliconix / Vishay MOSFET Transistors Height 0.042" (1.07mm)   Length 0.124" (3.15mm)  Siliconix / Vishay Length 0.124" (3.15mm)  MOSFET Transistors Length 0.124" (3.15mm)  Siliconix / Vishay MOSFET Transistors Length 0.124" (3.15mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 8  Siliconix / Vishay Number of Pins 8  MOSFET Transistors Number of Pins 8  Siliconix / Vishay MOSFET Transistors Number of Pins 8   Operating and Storage Temperature C55 to +150 °C  Siliconix / Vishay Operating and Storage Temperature C55 to +150 °C  MOSFET Transistors Operating and Storage Temperature C55 to +150 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature C55 to +150 °C   Package Type PowerPAK 1212-8  Siliconix / Vishay Package Type PowerPAK 1212-8  MOSFET Transistors Package Type PowerPAK 1212-8  Siliconix / Vishay MOSFET Transistors Package Type PowerPAK 1212-8   Polarization P-Channel  Siliconix / Vishay Polarization P-Channel  MOSFET Transistors Polarization P-Channel  Siliconix / Vishay MOSFET Transistors Polarization P-Channel   Power Dissipation 1.5 W  Siliconix / Vishay Power Dissipation 1.5 W  MOSFET Transistors Power Dissipation 1.5 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 1.5 W   Resistance, Drain to Source On 0.02 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.02 Ω  MOSFET Transistors Resistance, Drain to Source On 0.02 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.02 Ω   Resistance, Thermal, Junction to Case 2.4 °C/W  Siliconix / Vishay Resistance, Thermal, Junction to Case 2.4 °C/W  MOSFET Transistors Resistance, Thermal, Junction to Case 2.4 °C/W  Siliconix / Vishay MOSFET Transistors Resistance, Thermal, Junction to Case 2.4 °C/W   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 33 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 33 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 33 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 33 °C/W   Time, Turn-Off Delay 400 ns  Siliconix / Vishay Time, Turn-Off Delay 400 ns  MOSFET Transistors Time, Turn-Off Delay 400 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 400 ns   Time, Turn-On Delay 40 ns  Siliconix / Vishay Time, Turn-On Delay 40 ns  MOSFET Transistors Time, Turn-On Delay 40 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 40 ns   Transconductance, Forward 58 S  Siliconix / Vishay Transconductance, Forward 58 S  MOSFET Transistors Transconductance, Forward 58 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 58 S   Typical Gate Charge @ Vgs 34 nC @ -10 V  Siliconix / Vishay Typical Gate Charge @ Vgs 34 nC @ -10 V  MOSFET Transistors Typical Gate Charge @ Vgs 34 nC @ -10 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 34 nC @ -10 V   Voltage, Breakdown, Drain to Source -20 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source -20 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -20 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source -20 V   Voltage, Drain to Source -20 V  Siliconix / Vishay Voltage, Drain to Source -20 V  MOSFET Transistors Voltage, Drain to Source -20 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -20 V   Voltage, Forward, Diode -1.2 V  Siliconix / Vishay Voltage, Forward, Diode -1.2 V  MOSFET Transistors Voltage, Forward, Diode -1.2 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -1.2 V   Voltage, Gate to Source ±8 V  Siliconix / Vishay Voltage, Gate to Source ±8 V  MOSFET Transistors Voltage, Gate to Source ±8 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±8 V   Width 0.124" (3.15mm)  Siliconix / Vishay Width 0.124" (3.15mm)  MOSFET Transistors Width 0.124" (3.15mm)  Siliconix / Vishay MOSFET Transistors Width 0.124" (3.15mm)