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Surface Mounting and PowerPAK 1212-8 Package Dual P-Channel 60 V Voltage (D-S) Power MOSFET

TrenchFET® power MOSFET

New PowerPAK® package

Low thermal resistance

Low 1.07 mm profile

Fast switching
Resistance drain to source on 0.054 Ohms. Power dissipation is 3.8 W.

Application	Load switches, half-bridge motor drives, high voltage non-synchronous buck converters
Brand/Series	SI74 Series
Channel Type	P-Channel
Current, Drain	-3.6 A
Fall Time	16 nS
Gate Charge, Total	15 nC
Mounting Type	Surface Mount and PowerPAK 1212-8
Operating and Storage Temperature	-55 to +150 °C
Package Type	PowerPAK 1212-8
Polarization	P-Channel
Power Dissipation	1.5 W
Resistance, Drain to Source On	0.054 Ohm
Resistance, Thermal, Junction to Case	1.9 °C⁄W
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Thermal Resistance, Junction to Ambient	26 °C⁄W
Time, Rise	12 nS
Time, Turn-Off Delay	22 ns
Time, Turn-On Delay	12 ns
Transconductance, Forward	11 S
Voltage, Breakdown, Drain to Source	-60 V
Voltage, Drain to Source	-60 V
Voltage, Forward, Diode	-0.8 V
Voltage, Gate to Source	±20 V
关键词

Application Load switches, half-bridge motor drives, high voltage non-synchronous buck converters  Siliconix / Vishay Application Load switches, half-bridge motor drives, high voltage non-synchronous buck converters  MOSFET Transistors Application Load switches, half-bridge motor drives, high voltage non-synchronous buck converters  Siliconix / Vishay MOSFET Transistors Application Load switches, half-bridge motor drives, high voltage non-synchronous buck converters   Brand/Series SI74 Series  Siliconix / Vishay Brand/Series SI74 Series  MOSFET Transistors Brand/Series SI74 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI74 Series   Channel Type P-Channel  Siliconix / Vishay Channel Type P-Channel  MOSFET Transistors Channel Type P-Channel  Siliconix / Vishay MOSFET Transistors Channel Type P-Channel   Current, Drain -3.6 A  Siliconix / Vishay Current, Drain -3.6 A  MOSFET Transistors Current, Drain -3.6 A  Siliconix / Vishay MOSFET Transistors Current, Drain -3.6 A   Fall Time 16 nS  Siliconix / Vishay Fall Time 16 nS  MOSFET Transistors Fall Time 16 nS  Siliconix / Vishay MOSFET Transistors Fall Time 16 nS   Gate Charge, Total 15 nC  Siliconix / Vishay Gate Charge, Total 15 nC  MOSFET Transistors Gate Charge, Total 15 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 15 nC   Mounting Type Surface Mount and PowerPAK 1212-8  Siliconix / Vishay Mounting Type Surface Mount and PowerPAK 1212-8  MOSFET Transistors Mounting Type Surface Mount and PowerPAK 1212-8  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount and PowerPAK 1212-8   Operating and Storage Temperature -55 to +150 °C  Siliconix / Vishay Operating and Storage Temperature -55 to +150 °C  MOSFET Transistors Operating and Storage Temperature -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature -55 to +150 °C   Package Type PowerPAK 1212-8  Siliconix / Vishay Package Type PowerPAK 1212-8  MOSFET Transistors Package Type PowerPAK 1212-8  Siliconix / Vishay MOSFET Transistors Package Type PowerPAK 1212-8   Polarization P-Channel  Siliconix / Vishay Polarization P-Channel  MOSFET Transistors Polarization P-Channel  Siliconix / Vishay MOSFET Transistors Polarization P-Channel   Power Dissipation 1.5 W  Siliconix / Vishay Power Dissipation 1.5 W  MOSFET Transistors Power Dissipation 1.5 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 1.5 W   Resistance, Drain to Source On 0.054 Ohm  Siliconix / Vishay Resistance, Drain to Source On 0.054 Ohm  MOSFET Transistors Resistance, Drain to Source On 0.054 Ohm  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.054 Ohm   Resistance, Thermal, Junction to Case 1.9 °C⁄W  Siliconix / Vishay Resistance, Thermal, Junction to Case 1.9 °C⁄W  MOSFET Transistors Resistance, Thermal, Junction to Case 1.9 °C⁄W  Siliconix / Vishay MOSFET Transistors Resistance, Thermal, Junction to Case 1.9 °C⁄W   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Thermal Resistance, Junction to Ambient 26 °C⁄W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 26 °C⁄W  MOSFET Transistors Thermal Resistance, Junction to Ambient 26 °C⁄W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 26 °C⁄W   Time, Rise 12 nS  Siliconix / Vishay Time, Rise 12 nS  MOSFET Transistors Time, Rise 12 nS  Siliconix / Vishay MOSFET Transistors Time, Rise 12 nS   Time, Turn-Off Delay 22 ns  Siliconix / Vishay Time, Turn-Off Delay 22 ns  MOSFET Transistors Time, Turn-Off Delay 22 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 22 ns   Time, Turn-On Delay 12 ns  Siliconix / Vishay Time, Turn-On Delay 12 ns  MOSFET Transistors Time, Turn-On Delay 12 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 12 ns   Transconductance, Forward 11 S  Siliconix / Vishay Transconductance, Forward 11 S  MOSFET Transistors Transconductance, Forward 11 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 11 S   Voltage, Breakdown, Drain to Source -60 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source -60 V  MOSFET Transistors Voltage, Breakdown, Drain to Source -60 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source -60 V   Voltage, Drain to Source -60 V  Siliconix / Vishay Voltage, Drain to Source -60 V  MOSFET Transistors Voltage, Drain to Source -60 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -60 V   Voltage, Forward, Diode -0.8 V  Siliconix / Vishay Voltage, Forward, Diode -0.8 V  MOSFET Transistors Voltage, Forward, Diode -0.8 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -0.8 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V