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Brand/Series	SI78 Series
Channel Mode	Enhancement
Channel Type	N
Configuration	Dual Gate, Dual Source, Quad Drain
Current, Drain	6.4 A
Dimensions	5.99 x 5 x 1.07 mm
Gate Charge, Total	7 nC (Channel-1), 11.5 nC (Channel-2)
Height	0.042" (1.07mm)
Length	0.235" (5.99mm)
Mounting Type	Surface Mount
Number of Elements per Chip	2
Number of Pins	8
Package Type	PowerPAK-SO-8
Polarization	Dual N-Channel
Power Dissipation	1.4 W
Resistance, Drain to Source On	0.28 (Channel 2), 0.3 (Channel 1) Ω
Temperature, Operating, Maximum	+150 °C
Temperature, Operating, Minimum	-55 °C
Temperature, Operating, Range	-55 to +150 °C
Time, Turn-Off Delay	19 (Channel 1), 40 (Channel 2) ns
Time, Turn-On Delay	12 (Channel 2), 9 (Channel 1) ns
Transconductance, Forward	19 (Channel 1), 21 (Channel 2) S
Typical Gate Charge @ Vgs	11.5 nC (Channel 2) @ 4.5 V, 7 nC (Channel 1) @ 4.5 V
Voltage, Breakdown, Drain to Source	30 V
Voltage, Drain to Source	30 V
Voltage, Forward, Diode	0.75 V (Channel-1), 0.47 V (Channel-2) V
Voltage, Gate to Source	±12 (Channel 2), ±20 (Channel 1) V
Width	0.197" (5mm)
关键词

Brand/Series SI78 Series  Siliconix / Vishay Brand/Series SI78 Series  MOSFET Transistors Brand/Series SI78 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI78 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Configuration Dual Gate, Dual Source, Quad Drain  Siliconix / Vishay Configuration Dual Gate, Dual Source, Quad Drain  MOSFET Transistors Configuration Dual Gate, Dual Source, Quad Drain  Siliconix / Vishay MOSFET Transistors Configuration Dual Gate, Dual Source, Quad Drain   Current, Drain 6.4 A  Siliconix / Vishay Current, Drain 6.4 A  MOSFET Transistors Current, Drain 6.4 A  Siliconix / Vishay MOSFET Transistors Current, Drain 6.4 A   Dimensions 5.99 x 5 x 1.07 mm  Siliconix / Vishay Dimensions 5.99 x 5 x 1.07 mm  MOSFET Transistors Dimensions 5.99 x 5 x 1.07 mm  Siliconix / Vishay MOSFET Transistors Dimensions 5.99 x 5 x 1.07 mm   Gate Charge, Total 7 nC (Channel-1), 11.5 nC (Channel-2)  Siliconix / Vishay Gate Charge, Total 7 nC (Channel-1), 11.5 nC (Channel-2)  MOSFET Transistors Gate Charge, Total 7 nC (Channel-1), 11.5 nC (Channel-2)  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 7 nC (Channel-1), 11.5 nC (Channel-2)   Height 0.042" (1.07mm)  Siliconix / Vishay Height 0.042" (1.07mm)  MOSFET Transistors Height 0.042" (1.07mm)  Siliconix / Vishay MOSFET Transistors Height 0.042" (1.07mm)   Length 0.235" (5.99mm)  Siliconix / Vishay Length 0.235" (5.99mm)  MOSFET Transistors Length 0.235" (5.99mm)  Siliconix / Vishay MOSFET Transistors Length 0.235" (5.99mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 2  Siliconix / Vishay Number of Elements per Chip 2  MOSFET Transistors Number of Elements per Chip 2  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 2   Number of Pins 8  Siliconix / Vishay Number of Pins 8  MOSFET Transistors Number of Pins 8  Siliconix / Vishay MOSFET Transistors Number of Pins 8   Package Type PowerPAK-SO-8  Siliconix / Vishay Package Type PowerPAK-SO-8  MOSFET Transistors Package Type PowerPAK-SO-8  Siliconix / Vishay MOSFET Transistors Package Type PowerPAK-SO-8   Polarization Dual N-Channel  Siliconix / Vishay Polarization Dual N-Channel  MOSFET Transistors Polarization Dual N-Channel  Siliconix / Vishay MOSFET Transistors Polarization Dual N-Channel   Power Dissipation 1.4 W  Siliconix / Vishay Power Dissipation 1.4 W  MOSFET Transistors Power Dissipation 1.4 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 1.4 W   Resistance, Drain to Source On 0.28 (Channel 2), 0.3 (Channel 1) Ω  Siliconix / Vishay Resistance, Drain to Source On 0.28 (Channel 2), 0.3 (Channel 1) Ω  MOSFET Transistors Resistance, Drain to Source On 0.28 (Channel 2), 0.3 (Channel 1) Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.28 (Channel 2), 0.3 (Channel 1) Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 19 (Channel 1), 40 (Channel 2) ns  Siliconix / Vishay Time, Turn-Off Delay 19 (Channel 1), 40 (Channel 2) ns  MOSFET Transistors Time, Turn-Off Delay 19 (Channel 1), 40 (Channel 2) ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 19 (Channel 1), 40 (Channel 2) ns   Time, Turn-On Delay 12 (Channel 2), 9 (Channel 1) ns  Siliconix / Vishay Time, Turn-On Delay 12 (Channel 2), 9 (Channel 1) ns  MOSFET Transistors Time, Turn-On Delay 12 (Channel 2), 9 (Channel 1) ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 12 (Channel 2), 9 (Channel 1) ns   Transconductance, Forward 19 (Channel 1), 21 (Channel 2) S  Siliconix / Vishay Transconductance, Forward 19 (Channel 1), 21 (Channel 2) S  MOSFET Transistors Transconductance, Forward 19 (Channel 1), 21 (Channel 2) S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 19 (Channel 1), 21 (Channel 2) S   Typical Gate Charge @ Vgs 11.5 nC (Channel 2) @ 4.5 V, 7 nC (Channel 1) @ 4.5 V  Siliconix / Vishay Typical Gate Charge @ Vgs 11.5 nC (Channel 2) @ 4.5 V, 7 nC (Channel 1) @ 4.5 V  MOSFET Transistors Typical Gate Charge @ Vgs 11.5 nC (Channel 2) @ 4.5 V, 7 nC (Channel 1) @ 4.5 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 11.5 nC (Channel 2) @ 4.5 V, 7 nC (Channel 1) @ 4.5 V   Voltage, Breakdown, Drain to Source 30 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 30 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V   Voltage, Drain to Source 30 V  Siliconix / Vishay Voltage, Drain to Source 30 V  MOSFET Transistors Voltage, Drain to Source 30 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 30 V   Voltage, Forward, Diode 0.75 V (Channel-1), 0.47 V (Channel-2) V  Siliconix / Vishay Voltage, Forward, Diode 0.75 V (Channel-1), 0.47 V (Channel-2) V  MOSFET Transistors Voltage, Forward, Diode 0.75 V (Channel-1), 0.47 V (Channel-2) V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 0.75 V (Channel-1), 0.47 V (Channel-2) V   Voltage, Gate to Source ±12 (Channel 2), ±20 (Channel 1) V  Siliconix / Vishay Voltage, Gate to Source ±12 (Channel 2), ±20 (Channel 1) V  MOSFET Transistors Voltage, Gate to Source ±12 (Channel 2), ±20 (Channel 1) V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±12 (Channel 2), ±20 (Channel 1) V   Width 0.197" (5mm)  Siliconix / Vishay Width 0.197" (5mm)  MOSFET Transistors Width 0.197" (5mm)  Siliconix / Vishay MOSFET Transistors Width 0.197" (5mm)