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SI9926BDY-T1-E3 - 

MOSFET, Dual, N-Channel, 20V, 8.2A, 2W, SO-8

Siliconix / Vishay SI9926BDY-T1-E3
声明：图片仅供参考，请以实物为准！
制造商产品编号：
SI9926BDY-T1-E3
仓库库存编号：
70026129
技术数据表：
View SI9926BDY-T1-E3 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

SI9926BDY-T1-E3产品概述

Features:
  • Halogen-Free Option Available
  • Low-Side Switching
  • Low On-Resistance: 5 Ω
  • Low Threshold: 0.9 V (Typ.)
  • Fast Switching Speed: 35 ns (Typ.)
  • TrenchFET® Power MOSFETs: 1.5 V Rated
  • ESD Protected: 2000 V

    Applications:
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers

    • SI9926BDY-T1-E3产品信息

      Brand/Series  SI99 Series  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Dual Gate, Dual Source, Quad Drain  
      Current, Drain  6.2 A  
      Dimensions  5 x 4 x 1.55 mm  
      Gate Charge, Total  11 nC  
      Height  0.061" (1.55mm)  
      Length  0.196" (5mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  2  
      Number of Pins  8  
      Package Type  SO-8  
      Polarization  N-Channel  
      Power Dissipation  1.14 W  
      Resistance, Drain to Source On  0.03 Ω  
      Temperature, Operating  -55 to 150 °C  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Thermal Resistance, Junction to Ambient  90 °C/W  
      Time, Turn-Off Delay  31 ns  
      Time, Turn-On Delay  35 ns  
      Transconductance, Forward  29 S  
      Typical Gate Charge @ Vgs  11 nC @ 4.5 V  
      Voltage, Breakdown, Drain to Source  20 V  
      Voltage, Drain to Source  20 V  
      Voltage, Forward, Diode  1.2 V  
      Voltage, Gate to Source  ±12 V  
      Width  0.157" (4mm)  
    关键词         

    SI9926BDY-T1-E3相关搜索

    Brand/Series SI99 Series  Siliconix / Vishay Brand/Series SI99 Series  MOSFET Transistors Brand/Series SI99 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI99 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Configuration Dual Gate, Dual Source, Quad Drain  Siliconix / Vishay Configuration Dual Gate, Dual Source, Quad Drain  MOSFET Transistors Configuration Dual Gate, Dual Source, Quad Drain  Siliconix / Vishay MOSFET Transistors Configuration Dual Gate, Dual Source, Quad Drain   Current, Drain 6.2 A  Siliconix / Vishay Current, Drain 6.2 A  MOSFET Transistors Current, Drain 6.2 A  Siliconix / Vishay MOSFET Transistors Current, Drain 6.2 A   Dimensions 5 x 4 x 1.55 mm  Siliconix / Vishay Dimensions 5 x 4 x 1.55 mm  MOSFET Transistors Dimensions 5 x 4 x 1.55 mm  Siliconix / Vishay MOSFET Transistors Dimensions 5 x 4 x 1.55 mm   Gate Charge, Total 11 nC  Siliconix / Vishay Gate Charge, Total 11 nC  MOSFET Transistors Gate Charge, Total 11 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 11 nC   Height 0.061" (1.55mm)  Siliconix / Vishay Height 0.061" (1.55mm)  MOSFET Transistors Height 0.061" (1.55mm)  Siliconix / Vishay MOSFET Transistors Height 0.061" (1.55mm)   Length 0.196" (5mm)  Siliconix / Vishay Length 0.196" (5mm)  MOSFET Transistors Length 0.196" (5mm)  Siliconix / Vishay MOSFET Transistors Length 0.196" (5mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 2  Siliconix / Vishay Number of Elements per Chip 2  MOSFET Transistors Number of Elements per Chip 2  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 2   Number of Pins 8  Siliconix / Vishay Number of Pins 8  MOSFET Transistors Number of Pins 8  Siliconix / Vishay MOSFET Transistors Number of Pins 8   Package Type SO-8  Siliconix / Vishay Package Type SO-8  MOSFET Transistors Package Type SO-8  Siliconix / Vishay MOSFET Transistors Package Type SO-8   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 1.14 W  Siliconix / Vishay Power Dissipation 1.14 W  MOSFET Transistors Power Dissipation 1.14 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 1.14 W   Resistance, Drain to Source On 0.03 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.03 Ω  MOSFET Transistors Resistance, Drain to Source On 0.03 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.03 Ω   Temperature, Operating -55 to 150 °C  Siliconix / Vishay Temperature, Operating -55 to 150 °C  MOSFET Transistors Temperature, Operating -55 to 150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating -55 to 150 °C   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Thermal Resistance, Junction to Ambient 90 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 90 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 90 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 90 °C/W   Time, Turn-Off Delay 31 ns  Siliconix / Vishay Time, Turn-Off Delay 31 ns  MOSFET Transistors Time, Turn-Off Delay 31 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 31 ns   Time, Turn-On Delay 35 ns  Siliconix / Vishay Time, Turn-On Delay 35 ns  MOSFET Transistors Time, Turn-On Delay 35 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 35 ns   Transconductance, Forward 29 S  Siliconix / Vishay Transconductance, Forward 29 S  MOSFET Transistors Transconductance, Forward 29 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 29 S   Typical Gate Charge @ Vgs 11 nC @ 4.5 V  Siliconix / Vishay Typical Gate Charge @ Vgs 11 nC @ 4.5 V  MOSFET Transistors Typical Gate Charge @ Vgs 11 nC @ 4.5 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 11 nC @ 4.5 V   Voltage, Breakdown, Drain to Source 20 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 20 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 20 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 20 V   Voltage, Drain to Source 20 V  Siliconix / Vishay Voltage, Drain to Source 20 V  MOSFET Transistors Voltage, Drain to Source 20 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 20 V   Voltage, Forward, Diode 1.2 V  Siliconix / Vishay Voltage, Forward, Diode 1.2 V  MOSFET Transistors Voltage, Forward, Diode 1.2 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1.2 V   Voltage, Gate to Source ±12 V  Siliconix / Vishay Voltage, Gate to Source ±12 V  MOSFET Transistors Voltage, Gate to Source ±12 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±12 V   Width 0.157" (4mm)  Siliconix / Vishay Width 0.157" (4mm)  MOSFET Transistors Width 0.157" (4mm)  Siliconix / Vishay MOSFET Transistors Width 0.157" (4mm)  
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