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SUM110N06-3M9H-E3 - 

MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.00325Ohm; ID 110A; TO-263; PD 375W; VGS +/-20V

Siliconix / Vishay SUM110N06-3M9H-E3
声明：图片仅供参考，请以实物为准！
制造商产品编号：
SUM110N06-3M9H-E3
仓库库存编号：
70026023
技术数据表：
View SUM110N06-3M9H-E3 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

SUM110N06-3M9H-E3产品概述

Features:
  • Halogen-Free According to IEC 61249-2-21 Definition
  • TrenchFET® Power MOSFET: 1.8 V Rated
  • Ultra Low On-Resistance for Increased Battery Life
  • New PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile
  • Compliant to RoHS Directive 2002/95/EC

    Applications:
  • Load/Power Switching in Portable Devices

    • SUM110N06-3M9H-E3产品信息

      Application  Automotive such as high-side switch, motor drives, 12 V battery  
      Brand/Series  SUM Series  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  110 A  
      Dimensions  10.414 x 9.652 x 4.826 mm  
      Fall Time  14 nS  
      Gate Charge, Total  200 nC  
      Length  0.41" (10.414mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  -55 to +175 °C  
      Package Type  TO-263  
      Polarization  N-Channel  
      Power Dissipation  375 W  
      Resistance, Drain to Source On  0.0082 Ω  
      Resistance, Thermal, Junction to Case  0.4 °C⁄W  
      Temperature, Operating, Maximum  +175 °C  
      Temperature, Operating, Minimum  -55 °C  
      Thermal Resistance, Junction to Ambient  40 °C⁄W  
      Time, Turn-Off Delay  75 ns  
      Time, Turn-On Delay  45 ns  
      Transconductance, Forward  30 S  
      Typical Gate Charge @ Vgs  200 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  60 V  
      Voltage, Drain to Source  60 V  
      Voltage, Forward, Diode  1.1 V  
    关键词         

    SUM110N06-3M9H-E3相关搜索

    Application Automotive such as high-side switch, motor drives, 12 V battery  Siliconix / Vishay Application Automotive such as high-side switch, motor drives, 12 V battery  MOSFET Transistors Application Automotive such as high-side switch, motor drives, 12 V battery  Siliconix / Vishay MOSFET Transistors Application Automotive such as high-side switch, motor drives, 12 V battery   Brand/Series SUM Series  Siliconix / Vishay Brand/Series SUM Series  MOSFET Transistors Brand/Series SUM Series  Siliconix / Vishay MOSFET Transistors Brand/Series SUM Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Configuration Single  Siliconix / Vishay Configuration Single  MOSFET Transistors Configuration Single  Siliconix / Vishay MOSFET Transistors Configuration Single   Current, Drain 110 A  Siliconix / Vishay Current, Drain 110 A  MOSFET Transistors Current, Drain 110 A  Siliconix / Vishay MOSFET Transistors Current, Drain 110 A   Dimensions 10.414 x 9.652 x 4.826 mm  Siliconix / Vishay Dimensions 10.414 x 9.652 x 4.826 mm  MOSFET Transistors Dimensions 10.414 x 9.652 x 4.826 mm  Siliconix / Vishay MOSFET Transistors Dimensions 10.414 x 9.652 x 4.826 mm   Fall Time 14 nS  Siliconix / Vishay Fall Time 14 nS  MOSFET Transistors Fall Time 14 nS  Siliconix / Vishay MOSFET Transistors Fall Time 14 nS   Gate Charge, Total 200 nC  Siliconix / Vishay Gate Charge, Total 200 nC  MOSFET Transistors Gate Charge, Total 200 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 200 nC   Length 0.41" (10.414mm)  Siliconix / Vishay Length 0.41" (10.414mm)  MOSFET Transistors Length 0.41" (10.414mm)  Siliconix / Vishay MOSFET Transistors Length 0.41" (10.414mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Siliconix / Vishay Number of Pins 3  MOSFET Transistors Number of Pins 3  Siliconix / Vishay MOSFET Transistors Number of Pins 3   Operating and Storage Temperature -55 to +175 °C  Siliconix / Vishay Operating and Storage Temperature -55 to +175 °C  MOSFET Transistors Operating and Storage Temperature -55 to +175 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature -55 to +175 °C   Package Type TO-263  Siliconix / Vishay Package Type TO-263  MOSFET Transistors Package Type TO-263  Siliconix / Vishay MOSFET Transistors Package Type TO-263   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 375 W  Siliconix / Vishay Power Dissipation 375 W  MOSFET Transistors Power Dissipation 375 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 375 W   Resistance, Drain to Source On 0.0082 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.0082 Ω  MOSFET Transistors Resistance, Drain to Source On 0.0082 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.0082 Ω   Resistance, Thermal, Junction to Case 0.4 °C⁄W  Siliconix / Vishay Resistance, Thermal, Junction to Case 0.4 °C⁄W  MOSFET Transistors Resistance, Thermal, Junction to Case 0.4 °C⁄W  Siliconix / Vishay MOSFET Transistors Resistance, Thermal, Junction to Case 0.4 °C⁄W   Temperature, Operating, Maximum +175 °C  Siliconix / Vishay Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Thermal Resistance, Junction to Ambient 40 °C⁄W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 40 °C⁄W  MOSFET Transistors Thermal Resistance, Junction to Ambient 40 °C⁄W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 40 °C⁄W   Time, Turn-Off Delay 75 ns  Siliconix / Vishay Time, Turn-Off Delay 75 ns  MOSFET Transistors Time, Turn-Off Delay 75 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 75 ns   Time, Turn-On Delay 45 ns  Siliconix / Vishay Time, Turn-On Delay 45 ns  MOSFET Transistors Time, Turn-On Delay 45 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 45 ns   Transconductance, Forward 30 S  Siliconix / Vishay Transconductance, Forward 30 S  MOSFET Transistors Transconductance, Forward 30 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 30 S   Typical Gate Charge @ Vgs 200 nC @ 10 V  Siliconix / Vishay Typical Gate Charge @ Vgs 200 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 200 nC @ 10 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 200 nC @ 10 V   Voltage, Breakdown, Drain to Source 60 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 60 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 60 V   Voltage, Drain to Source 60 V  Siliconix / Vishay Voltage, Drain to Source 60 V  MOSFET Transistors Voltage, Drain to Source 60 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 60 V   Voltage, Forward, Diode 1.1 V  Siliconix / Vishay Voltage, Forward, Diode 1.1 V  MOSFET Transistors Voltage, Forward, Diode 1.1 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1.1 V  
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