| Application |
Industrial |
|
| Brand/Series |
SUP Series |
|
| Capacitance, Input |
5000 pF @ 25 V |
|
| Channel Mode |
Enhancement |
|
| Channel Type |
N |
|
| Configuration |
Single |
|
| Current, Drain |
40 A |
|
| Dimensions |
10.51 x 4.65 x 15.49 mm |
|
| Fall Time |
145 nS |
|
| Gate Charge, Total |
95 nC |
|
| Height |
0.61" (15.49mm) |
|
| Mounting Type |
Through Hole |
|
| Number of Elements per Chip |
1 |
|
| Number of Pins |
3 |
|
| Operating and Storage Temperature |
-55 to +175 °C |
|
| Package Type |
TO-220AB |
|
| Polarization |
N-Channel |
|
| Power Dissipation |
300 W |
|
| Resistance, Drain to Source On |
0.163 Ω |
|
| Resistance, Thermal, Junction to Case |
0.5 °C⁄W |
|
| Temperature, Operating, Maximum |
+175 °C |
|
| Temperature, Operating, Minimum |
-55 °C |
|
| Temperature, Operating, Range |
-55 to +175 °C |
|
| Thermal Resistance, Junction to Ambient |
40 °C⁄W |
|
| Time, Turn-Off Delay |
40 ns |
|
| Time, Turn-On Delay |
22 ns |
|
| Transconductance, Forward |
70 S |
|
| Typical Gate Charge @ Vgs |
95 nC @ 10 V |
|
| Voltage, Breakdown, Drain to Source |
250 V |
|
| Voltage, Drain to Source |
250 V |
|
| Voltage, Forward, Diode |
1 V |
|
| Voltage, Gate to Source |
±30 V |
|
| Width |
0.183" (4.65mm) |
|
| 关键词 |