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SUP85N03-04P-E3 - 

MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0035Ohm; ID 85A; TO-220AB; PD 166W; VGS +/-20V

Siliconix / Vishay SUP85N03-04P-E3
声明：图片仅供参考，请以实物为准！
制造商产品编号：
SUP85N03-04P-E3
仓库库存编号：
70026134
技术数据表：
View SUP85N03-04P-E3 Datasheet Datasheet
订购热线： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于产品数据库庞大，部分产品信息可能未能及时更新，下单前请与销售人员确认好实时在库数量，谢谢合作！

SUP85N03-04P-E3产品概述

Features:
  • Halogen-Free Option Available
  • Low-Side Switching
  • Low On-Resistance: 5 Ω
  • Low Threshold: 0.9 V (Typ.)
  • Fast Switching Speed: 35 ns (Typ.)
  • TrenchFET® Power MOSFETs: 1.5 V Rated
  • ESD Protected: 2000 V

    Applications:
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers

    • SUP85N03-04P-E3产品信息

      Brand/Series  SUP Series  
      Capacitance, Input  4500 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  85 A  
      Dimensions  10.51 x 4.65 x 15.49 mm  
      Fall Time  35 ns  
      Gate Charge, Total  90 nC  
      Height  0.61" (15.49mm)  
      Length  0.413" (10.51mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  C55 to +175 °C  
      Package Type  TO-220AB  
      Polarization  N-Channel  
      Power Dissipation  166 W  
      Resistance, Drain to Source On  0.008 Ω  
      Resistance, Thermal, Junction to Case  0.9 °C/W  
      Temperature, Operating, Maximum  +175 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +175 °C  
      Thermal Resistance, Junction to Ambient  40 °C/W  
      Time, Turn-Off Delay  50 ns  
      Time, Turn-On Delay  15 ns  
      Transconductance, Forward  30 S  
      Typical Gate Charge @ Vgs  71 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  30 V  
      Voltage, Drain to Source  30 V  
      Voltage, Forward, Diode  1.5 V  
      Voltage, Gate to Source  ±20 V  
      Width  0.183" (4.65mm)  
    关键词         

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    SUP85N03-04P-E3相关搜索

    Brand/Series SUP Series  Siliconix / Vishay Brand/Series SUP Series  MOSFET Transistors Brand/Series SUP Series  Siliconix / Vishay MOSFET Transistors Brand/Series SUP Series   Capacitance, Input 4500 pF @ 25 V  Siliconix / Vishay Capacitance, Input 4500 pF @ 25 V  MOSFET Transistors Capacitance, Input 4500 pF @ 25 V  Siliconix / Vishay MOSFET Transistors Capacitance, Input 4500 pF @ 25 V   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Configuration Single  Siliconix / Vishay Configuration Single  MOSFET Transistors Configuration Single  Siliconix / Vishay MOSFET Transistors Configuration Single   Current, Drain 85 A  Siliconix / Vishay Current, Drain 85 A  MOSFET Transistors Current, Drain 85 A  Siliconix / Vishay MOSFET Transistors Current, Drain 85 A   Dimensions 10.51 x 4.65 x 15.49 mm  Siliconix / Vishay Dimensions 10.51 x 4.65 x 15.49 mm  MOSFET Transistors Dimensions 10.51 x 4.65 x 15.49 mm  Siliconix / Vishay MOSFET Transistors Dimensions 10.51 x 4.65 x 15.49 mm   Fall Time 35 ns  Siliconix / Vishay Fall Time 35 ns  MOSFET Transistors Fall Time 35 ns  Siliconix / Vishay MOSFET Transistors Fall Time 35 ns   Gate Charge, Total 90 nC  Siliconix / Vishay Gate Charge, Total 90 nC  MOSFET Transistors Gate Charge, Total 90 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 90 nC   Height 0.61" (15.49mm)  Siliconix / Vishay Height 0.61" (15.49mm)  MOSFET Transistors Height 0.61" (15.49mm)  Siliconix / Vishay MOSFET Transistors Height 0.61" (15.49mm)   Length 0.413" (10.51mm)  Siliconix / Vishay Length 0.413" (10.51mm)  MOSFET Transistors Length 0.413" (10.51mm)  Siliconix / Vishay MOSFET Transistors Length 0.413" (10.51mm)   Mounting Type Through Hole  Siliconix / Vishay Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  Siliconix / Vishay MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Siliconix / Vishay Number of Pins 3  MOSFET Transistors Number of Pins 3  Siliconix / Vishay MOSFET Transistors Number of Pins 3   Operating and Storage Temperature C55 to +175 °C  Siliconix / Vishay Operating and Storage Temperature C55 to +175 °C  MOSFET Transistors Operating and Storage Temperature C55 to +175 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature C55 to +175 °C   Package Type TO-220AB  Siliconix / Vishay Package Type TO-220AB  MOSFET Transistors Package Type TO-220AB  Siliconix / Vishay MOSFET Transistors Package Type TO-220AB   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 166 W  Siliconix / Vishay Power Dissipation 166 W  MOSFET Transistors Power Dissipation 166 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 166 W   Resistance, Drain to Source On 0.008 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.008 Ω  MOSFET Transistors Resistance, Drain to Source On 0.008 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.008 Ω   Resistance, Thermal, Junction to Case 0.9 °C/W  Siliconix / Vishay Resistance, Thermal, Junction to Case 0.9 °C/W  MOSFET Transistors Resistance, Thermal, Junction to Case 0.9 °C/W  Siliconix / Vishay MOSFET Transistors Resistance, Thermal, Junction to Case 0.9 °C/W   Temperature, Operating, Maximum +175 °C  Siliconix / Vishay Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +175 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +175 °C  MOSFET Transistors Temperature, Operating, Range -55 to +175 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +175 °C   Thermal Resistance, Junction to Ambient 40 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 40 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 40 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 40 °C/W   Time, Turn-Off Delay 50 ns  Siliconix / Vishay Time, Turn-Off Delay 50 ns  MOSFET Transistors Time, Turn-Off Delay 50 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 50 ns   Time, Turn-On Delay 15 ns  Siliconix / Vishay Time, Turn-On Delay 15 ns  MOSFET Transistors Time, Turn-On Delay 15 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 15 ns   Transconductance, Forward 30 S  Siliconix / Vishay Transconductance, Forward 30 S  MOSFET Transistors Transconductance, Forward 30 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 30 S   Typical Gate Charge @ Vgs 71 nC @ 10 V  Siliconix / Vishay Typical Gate Charge @ Vgs 71 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 71 nC @ 10 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 71 nC @ 10 V   Voltage, Breakdown, Drain to Source 30 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 30 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V   Voltage, Drain to Source 30 V  Siliconix / Vishay Voltage, Drain to Source 30 V  MOSFET Transistors Voltage, Drain to Source 30 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 30 V   Voltage, Forward, Diode 1.5 V  Siliconix / Vishay Voltage, Forward, Diode 1.5 V  MOSFET Transistors Voltage, Forward, Diode 1.5 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1.5 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.183" (4.65mm)  Siliconix / Vishay Width 0.183" (4.65mm)  MOSFET Transistors Width 0.183" (4.65mm)  Siliconix / Vishay MOSFET Transistors Width 0.183" (4.65mm)  
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